公开(公告)号：US20100027168A1

公开(公告)日：2010-02-04

申请号：US12219841

申请日：2008-07-29

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  H01L43/08

摘要： A thin film magnetic head comprise an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer comprises a first exchange coupling magnetic field application layer, a first antimagnetic layer, a second exchange coupling magnetic field application layer, and a second antimagnetic layer. The first antimagnetic layer is provided in contact with the first exchange coupling magnetic field application layer on the rear face of the first exchange coupling magnetic field application layer and which is antimagnetically coupled with the first exchange coupling magnetic field application layer. The second shield layer has the same configuration as that of the first shield layer.

摘要翻译： 薄膜磁头包括由第一和第二MR磁性层，第一和第二屏蔽层以及设置在MR叠层的空气轴承表面（ABS）的相对侧上的偏置磁场施加层组成的MR层叠体 以便施加相对于ABS正交的偏置磁场。 第一屏蔽层包括第一交换耦合磁场施加层，第一防磁层，第二交换耦合磁场施加层和第二防磁层。 第一防磁层设置成与第一交换耦合磁场施加层的背面上的第一交换耦合磁场施加层接触，并且与第一交换耦合磁场施加层反磁耦合。 第二屏蔽层具有与第一屏蔽层相同的构造。

公开(公告)号：US20090274837A1

公开(公告)日：2009-11-05

申请号：US12112598

申请日：2008-04-30

申请人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： B05D5/12

CPC分类号： G11B5/3163 ,  G01R33/098 ,  G11B5/3903 ,  H01L43/12

摘要： The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates. There is also a limited dispersion of the MR change rate with extremely improved reliability.

摘要翻译： 本发明提供一种用于形成磁阻器件的传感器位置的方法，其中依次形成第一铁磁层和非磁性中间层，然后对非磁性中间层的表面进行表面处理，之后将第二铁磁体层 在非磁性中间层的如此处理的表面上形成铁磁层。 表面处理通过使用真空使修饰元件在非磁性中间层的表面上正确敲击的方法来实现。 非磁性中间层主要由氧化物或氮化物构成，改性元素为熔点为500℃以下的低熔点元素。 因此，可以减少旋转散射，同时减少用于传感器部位的铁磁层的表面的氧化或氮化，由此实现高MR变化率。 MR变化率的有限分散也具有极高的可靠性。

公开(公告)号：US20090190270A1

公开(公告)日：2009-07-30

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

公开(公告)号：US20090174971A1

公开(公告)日：2009-07-09

申请号：US11968788

申请日：2008-01-03

申请人： Yoshihiro Tsuchiya ,  Shinji Hara ,  Tomohito Mizuno ,  Satoshi Miura ,  Takumi Yanagisawa

发明人： Yoshihiro Tsuchiya ,  Shinji Hara ,  Tomohito Mizuno ,  Satoshi Miura ,  Takumi Yanagisawa

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.

摘要翻译： 磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。 间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间​​的层构造 层和NiFe层。

公开(公告)号：US07333303B2

公开(公告)日：2008-02-19

申请号：US11023505

申请日：2004-12-29

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

IPC分类号： G11B5/39

CPC分类号： G11B5/3903

摘要： Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer made of IrMn, an outer pinned layer of which the magnetization direction is fixed in a +Y direction by the fixing layer, and an inner pinned layer of which the magnetization direction is fixed in a −Y direction by the fixing layer, a pair of conductive lead layers and a constant current circuit which flows a sense current in a +X direction so as to generate a current magnetic field toward a −Y direction in the inner pinned layer, and in the magnetoresistive device, a conditional expression (1) is satisfied. Thereby, the magnetization directions of the outer pinned layer and the inner pinned layer can be stabilized, so even under a high temperature environment, the magnetoresistive device can obtain stable output characteristics, and can respond to a demand for a higher recording density.

摘要翻译： 提供了一种即使在较高温度环境下也能够稳定地保持足够的输出特性并且响应于更高记录密度的需求的磁阻器件。 磁阻器件包括MR膜，其包括由IrMn制成的固定层，通过固定层将磁化方向固定在+ Y方向上的外部钉扎层，以及将磁化方向固定在其中的内部钉扎层 -Y方向，一对导电引线层和恒流电路，其在+ X方向上流过感测电流，以便在内部被钉扎层中朝向-Y方向产生电流磁场，并且在 磁阻器件，条件式（1）被满足。 由此，外部被钉扎层和内部被钉扎层的磁化方向可以稳定，因此即使在高温环境下，磁阻器件也能够得到稳定的输出特性，能够满足更高记录密度的要求。

公开(公告)号：US20070289444A1

公开(公告)日：2007-12-20

申请号：US11804953

申请日：2007-05-21

申请人： Yoshihiro Tsuchiya

发明人： Yoshihiro Tsuchiya

IPC分类号： A47L9/20 ,  A47L5/22 ,  B01D46/46 ,  A47L9/19

CPC分类号： A47L9/20 ,  A47L9/122 ,  A47L9/165 ,  A47L9/1666 ,  A47L9/19 ,  A47L9/2831 ,  A47L9/2836 ,  A47L9/2842 ,  A47L9/2857 ,  A47L9/2889 ,  B01D46/0087 ,  B01D46/42 ,  B01D46/521 ,  B01D2279/55

摘要： A vacuum cleaner includes a motor-driven blower for drawing air and a dust-catching unit for separating dust from the air drawn by the blower and catching the dust separated from the air. A receptacle is located between the blower and the dust-catching unit and holds a filter for filtering the air that has passed through the dust-catching unit. An airflow control device is arranged between the filter and the blower. The airflow control device generates a first airflow, which passes through the dust-catching unit and the filter and goes toward the motor-driven blower. The airflow control device generates a second airflow, too, which bypasses the filter, passes through at least a part of the dust-catching unit, and goes toward the motor-driven blower. The part of the dust-catching unit is located downstream of the receptacle, with respect to a direction in which the second airflow goes.

摘要翻译： 真空吸尘器包括用于抽吸空气的电动鼓风机和吸尘单元，用于分离由鼓风机吸入的空气中的灰尘并捕获与空气分离的灰尘。 容器位于鼓风机和吸尘单元之间，并且保持用于过滤已经通过吸尘单元的空气的过滤器。 在过滤器和鼓风机之间布置有气流控制装置。 气流控制装置产生通过吸尘单元和过滤器朝向电动鼓风机的第一气流。 气流控制装置也产生绕过过滤器的第二气流，通过吸尘单元的至少一部分，并朝向电动鼓风机。 吸尘单元的一部分相对于第二气流流动的方向位于容器的下游。

公开(公告)号：US20070230070A1

公开(公告)日：2007-10-04

申请号：US11709148

申请日：2007-02-22

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： A pinned layer of an MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. A free layer of the MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. Each of these two Heusler alloy layers is made of a CoMnSi alloy having an Mn content higher than 25 atomic percent and lower than or equal to 40 atomic percent, and contains a principal component having a B2 structure in which Co atoms are placed at body-centered positions of unit cells and Mn atoms or Si atoms are randomly placed at vertexes of the unit cells.

摘要翻译： MR元件的被钉扎层包括由具有体心立方结构的磁性合金层制成的下层磁性层，以及形成在下面的磁性层上的Heusler合金层。 MR元件的自由层包括由具有体心立方结构的磁性合金层制成的下层磁性层和形成在下面的磁性层上的Heusler合金层。 这两个Heusler合金层中的每一个由Mn含量高于25原子％且低于或等于40原子％的CoMnSi合金制成，并且包含具有其中Co原子被置于体态的B2结构的主要成分， 单元电池的中心位置和Mn原子或Si原子随机放置在单位晶胞的顶点。

公开(公告)号：US20070121255A1

公开(公告)日：2007-05-31

申请号：US11519921

申请日：2006-09-13

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa ,  Daisuke Miyauchi

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/10

摘要： A magneto-resistance effect element according to the present invention comprises a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between said pinned layer and said free layer. At least either said pinned layer or said free layer includes a Heusler alloy layer that is disposed adjacent to said spacer layer, and compounds are arranged in a dotted pattern at an interface between said spacer layer and at least said spacer layer and said pinned layer or said spacer layer and said free layer, said compounds including material that is included in said Heusler alloy layer.

摘要翻译： 根据本发明的磁阻效应元件包括其磁化方向固定的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在所述被钉扎层和所述自由层之间的非磁性间隔层。 所述被钉扎层或所述自由层中的至少一个包括邻近所述间隔层设置的Heusler合金层，并且化合物以虚线图案布置在所述间隔层和至少所述间隔层和所述钉扎层之间的界面处，或 所述间隔层和所述自由层，所述化合物包括包含在所述Heusler合金层中的材料。

公开(公告)号：US20070058301A1

公开(公告)日：2007-03-15

申请号：US11519854

申请日：2006-09-13

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F1/408 ,  H01F10/1936 ,  H01F10/3272

摘要： A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.

摘要翻译： 根据本发明的磁阻元件具有固定磁化方向的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在被钉扎层和自由层之间的非磁性间隔层，至少被钉扎层或自由层包括由组成式X 2 Y Y（其中X为 贵金属元素，Y是Mn，V或Ti基的过渡金属，Z是III族至V族的元素），组成X的一部分被Co替代，Co的原子组成比 组合物X为0.5〜0.85。

公开(公告)号：US20050192985A1

公开(公告)日：2005-09-01

申请号：US11106555

申请日：2005-04-15

申请人： Yoshihiro Tsuchiya

发明人： Yoshihiro Tsuchiya

IPC分类号： G06F7/00 ,  G06F17/30

CPC分类号： G06F16/13

摘要： A file classifying apparatus for classifying files and directories in a hierarchical tree structure includes a receiving unit, a storing unit, and a writing controlling unit. The receiving unit receives a characteristic value as an index for classifying the files or directories. The storing unit stores management data of the files or the directories for forming a hierarchical tree structure. The writing controlling unit controls and writes the characteristic value received by the receiving unit in the management data.

摘要翻译： 一种用于在分层树结构中分类文件和目录的文件分类装置包括接收单元，存储单元和写入控制单元。 接收单元接收特征值作为用于分类文件或目录的索引。 存储单元存储用于形成分层树结构的文件或目录的管理数据。 写入控制单元控制并写入接收单元在管理数据中接收的特征值。