公开(公告)号：US06329126B1

公开(公告)日：2001-12-11

申请号：US08339340

申请日：1994-11-14

申请人： Hatsuyuki Tanaka ,  Mitsuru Sato ,  Toshimasa Nakayama ,  Hiroshi Komano

发明人： Hatsuyuki Tanaka ,  Mitsuru Sato ,  Toshimasa Nakayama ,  Hiroshi Komano

IPC分类号： G03F732

CPC分类号： G03F7/322

摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.

摘要翻译： 公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层 任何最好的图案。 除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂， 例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

公开(公告)号：US6159652A

公开(公告)日：2000-12-12

申请号：US20408

申请日：1998-02-09

申请人： Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.

摘要翻译： 公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。 该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B） 酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代 式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。 和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。 该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于 底物。 该组合物可用于在制造超LSI时形成精细图案。

公开(公告)号：US6083665A

公开(公告)日：2000-07-04

申请号：US273262

申请日：1999-03-22

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.

摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

公开(公告)号：US5928837A

公开(公告)日：1999-07-27

申请号：US987023

申请日：1997-12-09

申请人： Mitsuru Sato ,  Kiyoshi Ishikawa ,  Yoshiki Sugeta ,  Hiroyuki Yamazaki ,  Toshikazu Tachikawa ,  Hiroshi Komano

发明人： Mitsuru Sato ,  Kiyoshi Ishikawa ,  Yoshiki Sugeta ,  Hiroyuki Yamazaki ,  Toshikazu Tachikawa ,  Hiroshi Komano

IPC分类号： G03F7/004 ,  G03F7/038 ,  H01L21/027 ,  G03C1/492

CPC分类号： G03F7/038 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Proposed is a novel negative-working chemical-sensitization photoresist composition used in the photolithographic patterning work for the manufacture of semiconductor devices and the like and capable of giving a patterned resist layer with high sensitivity and pattern resolution as well as excellent heat resistance and excellently orthogonal cross sectional profile of the patterned resist layer. The composition comprises, as a uniform solution:(A) 100 parts by weight of an alkali-soluble resin which is a polyhydroxystyrene-based resin having a weight-average molecular weight of at least 2000;(B) from 3 to 70 parts by weight of an acid-crosslinkable compound which is an amino resin having hydroxyalkyl and/or alkoxyalkyl groups;(C) from 0.5 to 30 parts by weight of a radiation-sensitive acid-generating compound selected from several types of specific oximesulfonate compounds; and(D) from 0.5 to 10 parts by weight of a phenolic compound, such as benzophenone compounds, having at least four hydroxyl groups in a molecule and a molecular weight smaller than 2000.

摘要翻译： 提出了用于制造半导体器件等的光刻图案化工作中的新颖的负极化学增感光致抗蚀剂组合物，并且能够提供具有高灵敏度和图案分辨率的图案化抗蚀剂层以及优异的耐热性和良好的正交 图案化抗蚀剂层的横截面轮廓。 该组合物包含作为均匀溶液：（A）100重量份作为重均分子量为至少2000的聚羟基苯乙烯类树脂的碱溶性树脂; （B）3〜70重量份作为具有羟烷基和/或烷氧基烷基的氨基树脂的酸交联性化合物; （C）0.5〜30重量份选自几种特定肟磺酸酯化合物的辐射敏感产酸化合物; 和（D）0.5〜10重量份在分子中具有至少四个羟基并且分子量小于2000的酚类化合物，例如二苯甲酮化合物。

公开(公告)号：US5849467A

公开(公告)日：1998-12-15

申请号：US788442

申请日：1997-01-28

申请人： Mitsuru Sato ,  Naomi Nagatsuka ,  Koichi Nagasawa ,  Hutoshi Shimai ,  Kouji Harada

发明人： Mitsuru Sato ,  Naomi Nagatsuka ,  Koichi Nagasawa ,  Hutoshi Shimai ,  Kouji Harada

IPC分类号： G03F7/42 ,  G03F7/16 ,  G03F7/26 ,  H01L21/027 ,  H01L21/304 ,  H01L21/308 ,  G03C5/00

CPC分类号： G03F7/168

摘要： The invention proposes an improved method for the pre-treatment of a photoresist layer formed on a substrate surface prior to pattern-wise exposure of the photoresist layer to actinic rays, in which extraneous portions of the resist layer formed by overspreading of the photoresist solution as in the marginal zone of the patterning area and on the peripheral and back surfaces of the substrate, by dissolving away with a cleaning solution. In contrast to the conventional cleaning solutions consisting entirely or mainly of an organic solvent capable of dissolving the photoresist composition, the cleaning solution used in the inventive method is an aqueous alkaline solution containing a water-soluble alkaline compound dissolved in an aqueous medium consisting of water and a limited amount of a water-miscible organic solvent such as monohydric alcohols, alkyleneglycol monoalkyl ethers and aprotic solvents. The cleaning solution may optionally contain an anti-corrosion agent.

摘要翻译： 本发明提出了一种用于在将光致抗蚀剂层图案化地曝光于光化射线之前，在基板表面上形成的光致抗蚀剂层的预处理的改进方法，其中通过将光致抗蚀剂溶液的过度扩展形成的抗蚀剂层的外部部分 在图案化区域的边缘区域和衬底的周边和背面上，通过用清洁溶液溶解。 与完全或主要由可溶解光致抗蚀剂组合物的有机溶剂组成的常规清洁溶液相反，本发明方法中使用的清洗溶液是含有溶于水中的水溶性碱性化合物的碱性水溶液， 和有限量的水混溶性有机溶剂如一元醇，亚烷基二醇单烷基醚和非质子溶剂。 清洁溶液可以任选地含有防腐蚀剂。

公开(公告)号：US5845184A

公开(公告)日：1998-12-01

申请号：US220436

申请日：1994-03-30

申请人： Akira Nagahara ,  Yoshio Yamaguchi ,  Shigenobu Utaka ,  Toshio Tooda ,  Haruyasu Watanabe ,  Sachio Sasaki ,  Mitsuhito Furukawa ,  Mitsuru Sato ,  Nobuo Kuwabara ,  Takefumi Takahashi

发明人： Akira Nagahara ,  Yoshio Yamaguchi ,  Shigenobu Utaka ,  Toshio Tooda ,  Haruyasu Watanabe ,  Sachio Sasaki ,  Mitsuhito Furukawa ,  Mitsuru Sato ,  Nobuo Kuwabara ,  Takefumi Takahashi

IPC分类号： G03G9/083 ,  G03G15/08 ,  G03G15/09

CPC分类号： G03G15/09 ,  G03G15/0896 ,  G03G2215/00012 ,  G03G2215/0609

摘要： A developing apparatus is provided for developing an electrostatic latent image on a latent image carrier by supplying the latent image carrier with a developer. This developing apparatus includes a toner accommodating chamber for accommodating magnetic toners. The apparatus also includes a developing roller, having a plurality of fixed magnetic pole members and sleeves provided along peripheries of the fixed magnetic pole members and rotating thereabout, for feeding the developer composed of magnetic carriers and magnetic toners to the latent image carrier. The apparatus further includes a developing chamber having a partition wall formed along the developing roller and assuming a configuration adapted to a shape of the developing roller, and a toner supply port for supplying the magnetic toners to the developing chamber from the toner accommodating chamber. In another mode of the developing apparatus, the center of each magnetic pole of the fixed magnetic pole members is located in a position deviating from the toner supply port. Further, in still another mode of the developing apparatus, there is employed the magnetic carrier the core of which is iron powder exhibiting strong saturation magnetization.

摘要翻译： 提供一种显影装置，用于通过向潜像载体提供显影剂来使潜像载体上的静电潜像显影。 该显影装置包括用于容纳磁性调色剂的调色剂容纳室。 该装置还包括一个显影辊，具有多个固定磁极件和沿固定磁极件的周边设置并在其周围旋转的套筒，用于将由磁性载体和磁性调色剂构成的显影剂供给潜像载体。 该装置还包括具有沿着显影辊形成的分隔壁并具有适于显影辊形状的分隔壁的显影室和用于从调色剂容纳室将磁性调色剂供应到显影室的调色剂供给口。 在显影装置的另一种模式中，固定磁极件的每个磁极的中心位于偏离调色剂供给口的位置。 此外，在显影装置的另一种模式中，使用磁性载体，其核心是呈现强饱和磁化强度的铁粉。

公开(公告)号：US5815767A

公开(公告)日：1998-09-29

申请号：US857899

申请日：1997-05-16

申请人： Akio Kutsuwada ,  Masaru Tanaka ,  Takeo Suda ,  Mitsuru Sato ,  Toshitaka Yamaguchi ,  Kenzou Tatsumi

发明人： Akio Kutsuwada ,  Masaru Tanaka ,  Takeo Suda ,  Mitsuru Sato ,  Toshitaka Yamaguchi ,  Kenzou Tatsumi

IPC分类号： G03G15/00 ,  G03G15/09 ,  G03G21/18

CPC分类号： G03G15/09 ,  G03G15/65 ,  G03G15/75 ,  G03G21/181 ,  G03G5/147 ,  G03G2215/00675 ,  G03G2215/0607 ,  G03G2221/163 ,  G03G2221/1663 ,  G03G2221/1666

摘要： In an image forming apparatus, a latent image electrostatically formed on a photoconductive element is developed by a two-ingredient type developer consisting of toner and carrier. The photoconductive element has a life coincident with the life of the developer. When the photoconductive element and developer reach the end of their life, they are replaced at the same time.

摘要翻译： 在图像形成装置中，通过由调色剂和载体构成的双组分型显影剂显影静电形成在光电导元件上的潜像。 光导元件具有与显影剂寿命一致的寿命。 当光导元件和显影剂达到使用寿命时，它们将被同时更换。

公开(公告)号：US5789136A

公开(公告)日：1998-08-04

申请号：US626147

申请日：1996-04-05

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Fumitake Kaneko

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Fumitake Kaneko

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03C1/73

CPC分类号： G03F7/0045 ,  G03F7/038 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/128

摘要： Proposed is an alkali-developable negative-working photoresist composition in the form of a solution capable of exhibiting high sensitivity and greatly improved stability of the resist layer of the composition on a substrate surface after pattern-wise exposure to actinic rays and kept for a substantial length of time before further processing. The photoresist composition comprises, as the essential ingredients, (a) an alkali-soluble resin such as a copolymer of hydroxystyrene and styrene; (b) a compound capable of releasing an acid when irradiated with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; (c) a crosslinking agent selected from the group consisting of melamine resins and urea resins substituted at the N-positions by methylol groups, alkoxy methyl groups or a combination thereof; and (d) a sensitivity improver which is hexa(methoxymethyl) melamine or di(methoxymethyl) urea, each in a specified proportion.

摘要翻译： 提出了一种可显影的负性光致抗蚀剂组合物，其形式为能够显示出高灵敏度并且大大提高组合物的抗蚀剂层在图案形式暴露于光化射线之后在基材表面上的稳定性，并保持基本上 进一步处理之前的时间长短。 光致抗蚀剂组合物包含作为必要成分的（a）碱溶性树脂，例如羟基苯乙烯和苯乙烯的共聚物; （b）当用诸如三（2,3-二溴丙基）异氰脲酸酯的光化射线照射时能够释放酸的化合物; （c）选自三聚氰胺树脂和在N-位被羟甲基取代的尿素树脂的交联剂，烷氧基甲基或其组合; 和（d）灵敏度改进剂，其为六（甲氧基甲基）三聚氰胺或二（甲氧基甲基）脲，各自为特定比例。

公开(公告)号：US5747224A

公开(公告)日：1998-05-05

申请号：US630622

申请日：1996-04-10

申请人： Mitsuru Sato ,  Masakazu Kobayashi ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Masakazu Kobayashi ,  Toshimasa Nakayama

IPC分类号： G03F7/32

CPC分类号： G03F7/32

摘要： Stock developer solutions for photoresists contain an organic base free from metal ions and at least one compound having a specified weight average molecular weight that is selected from among polyethylene oxide compounds, polypropylene oxide compounds and ethylene oxide/propylene oxide adducts. The stock developer solutions may be diluted to requisite concentrations to prepare developer solutions for photoresists. By adding one or more of the specified compounds to the organic base free from metal ions, one can produce highly compatible stock developer solutions for photoresists that are concentrated, that have high stability in quality and that permit ease in handling and quality control. The stock developer solutions may be diluted to prepare developer solutions that are small in the tendency to foam and effective in defoaming, that assure uniform wetting and that are capable of forming resist patterns faithful to mask patterns.

摘要翻译： 用于光致抗蚀剂的储备显影剂溶液含有不含金属离子的有机碱和至少一种具有指定重均分子量的化合物，其选自聚环氧乙烷化合物，聚环氧丙烷化合物和环氧乙烷/环氧丙烷加合物。 原料显影剂溶液可以稀释至必需的浓度以制备用于光致抗蚀剂的显影剂溶液。 通过将一种或多种指定的化合物加入到不含金属离子的有机基质中，可以生产高浓度的光致抗蚀剂的高度相容的原料显影剂溶液，其具有高的质量稳定性并且易于处理和质量控制。 可以将原料显影剂溶液稀释以制备发泡趋势小并且有效消泡的显影剂溶液，其确保均匀润湿并且能够形成忠实于掩模图案的抗蚀剂图案。

公开(公告)号：US5543268A

公开(公告)日：1996-08-06

申请号：US231877

申请日：1994-04-22

申请人： Hatsuyuki Tanaka ,  Mitsuru Sato ,  Toshimasa Nakayama ,  Hiroshi Komano

发明人： Hatsuyuki Tanaka ,  Mitsuru Sato ,  Toshimasa Nakayama ,  Hiroshi Komano

IPC分类号： G03F7/32

CPC分类号： G03F7/322

摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.

摘要翻译： 公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层 任何最好的图案。 除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂， 例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。