公开(公告)号：US07502206B2

公开(公告)日：2009-03-10

申请号：US11492375

申请日：2006-07-24

申请人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

发明人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.

摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。

公开(公告)号：US07436634B2

公开(公告)日：2008-10-14

申请号：US11615840

申请日：2006-12-22

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

IPC分类号： G11B5/10 ,  G11B5/39

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A magnetic shield for use in a magnetic head. The magnetic shield has a magnetic anisotropy associated with a magnetic easy axis of magnetization oriented substantially parallel with the air bearing surface. The magnetic anisotropy of the shield is induced by an anisotropic surface texture. This anisotropic surface texture can be formed in a surface of one or more magnetic layers of the shield, or can be formed in a surface of an under-layer on which the shield is deposited. The shield could also be constructed as a lamination of magnetic layers separated by non-magnetic layers, with the anisotropic surface texture being formed on one or more of the non-magnetic layers.

摘要翻译： 用于磁头的磁屏蔽。 磁屏蔽具有与磁性易磁化轴相关联的磁各向异性，该磁性易磁化轴基本上平行于空气轴承表面定向。 屏蔽的磁各向异性由各向异性表面纹理引起。 这种各向异性表面纹理可以形成在屏蔽的一个或多个磁性层的表面中，或者可以形成在其上沉积有屏蔽层的下层的表面中。 屏蔽也可以被构造为由非磁性层分离的磁性层的叠层，各向异性表面纹理形成在一个或多个非磁性层上。

公开(公告)号：US07423847B2

公开(公告)日：2008-09-09

申请号：US11268275

申请日：2005-11-03

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat ,  Neil Smith

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat ,  Neil Smith

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906

摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an insulating layer with at least one aperture that confines the flow of sense current through the active region. The apertures are located closer to the sensing edge of the sensor than to the back edge of the sensor. The aperture (or apertures) are patterned by e-beam lithography, which enables the number, size and location of the apertures to be precisely controlled. The insulating layer may be located inside the electrically conductive nonmagnetic spacer layer, or outside of the magnetically active layers of the spin-valve. More than one insulating layer may be included in the stack to define conductive current paths where the apertures of the insulating layers overlap. The apertures are filled with electrically conductive material, typically the same material as that used for the spacer layer.

摘要翻译： 电流 - 垂直于平面的自旋阀（CPP-SV）磁阻传感器具有绝缘层，其具有至少一个限制感应电流通过有源区域的孔径。 孔比传感器的后边缘更靠近传感器的感测边缘。 孔（或孔）通过电子束光刻被图案化，这使得能够精确地控制孔的数量，尺寸和位置。 绝缘层可以位于导电非磁性间隔层内部，或位于自旋阀的磁性有效层的外部。 堆叠中可以包括多于一个绝缘层，以限定绝缘层的孔重叠的导电电流路径。 孔被填充有导电材料，通常与用于间隔层的材料相同。

公开(公告)号：US07382586B2

公开(公告)日：2008-06-03

申请号：US11177990

申请日：2005-07-07

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

IPC分类号： G11B5/39

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。

公开(公告)号：US07382580B2

公开(公告)日：2008-06-03

申请号：US11144243

申请日：2005-06-04

申请人： Stefan Maat

发明人： Stefan Maat

IPC分类号： G11B5/127

CPC分类号： G11B5/105 ,  B82Y10/00 ,  G11B5/127 ,  G11B5/314 ,  G11B5/54 ,  G11B5/58 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021 ,  H05B3/12

摘要： An electrically resistive heater is formed of a chemically disordered CrxV100-x alloy. The alloy exhibits a high temperature coefficient of resistance (TCR) so that the heater temperature can be inferred from its resistance, minimal resistance vs. temperature hysteresis upon heating and cooling, a high melting point, and temporal stability of resistance at elevated temperatures. The resistive heater is used in data storage systems, including magnetic recording hard disk drives that uses heaters to thermally assist the recording or induce protrusion of the write head pole tips to reduce the head-disk spacing, and atomic force microscopy (AFM) based systems that use “nanoheaters” on cantilever tips for either thermally-assisted recording on magnetic media or thermo-mechanical recording on polymer-based media.

摘要翻译： 电阻加热器由化学无序的Cr x 100> x合金形成。 该合金表现出高的电阻温度系数（T CR），使得加热器温度可以从其电阻，加热和冷却时的最小电阻对温度滞后，高熔点和时间推断 在高温下的电阻稳定性。 电阻加热器用于数据存储系统，包括磁记录硬盘驱动器，其使用加热器热辅助记录或引起写入磁头尖端的突出以减小磁头 - 磁盘间距，以及基于原子力显微镜（AFM）的系统 在磁性介质上进行热辅助记录或在基于聚合物的介质上进行热机械记录的悬臂尖上使用“纳米级”。

公开(公告)号：US20080100964A1

公开(公告)日：2008-05-01

申请号：US11553215

申请日：2006-10-26

申请人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

发明人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

IPC分类号： G11B5/82 ,  G11B5/65

CPC分类号： G11B5/64 ,  G11B5/1278 ,  G11B5/3103

摘要： A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.

摘要翻译： 磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁（AF-F）过渡层的双层记录介质。 过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度（T AF AF F F）。 因此，过渡层具有过渡场H AF-F（T），其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场，而不需要加热该层。 在环境温度下和在不存在的情况下，过渡层是反铁磁性的，并且双层的开关场H 0正好是H

公开(公告)号：US20080074807A1

公开(公告)日：2008-03-27

申请号：US11944082

申请日：2007-11-21

申请人： Matthew Carey ,  Shekar Chandrashekariaih ,  Stefan Maat ,  Jeffrey Childress

发明人： Matthew Carey ,  Shekar Chandrashekariaih ,  Stefan Maat ,  Jeffrey Childress

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272

摘要： A magnetoresistive sensor having a pinned layer that includes a first magnetic layer (AP1) a second magnetic layer (AP2) and an antiparallel coupling layer sandwiched between the AP1 and AP2 layers. The AP1 layer is adjacent to a layer of antiferromagnetic material (AFM layer) and is constructed so as to have a long spin diffusion length. The long spin diffusion length of the AP1 layer minimizes the negative GMR contribution of the AP1 layer, thereby increasing the overall GMR effect of the sensor.

摘要翻译： 一种具有固定层的磁阻传感器，其包括夹在AP1和AP2层之间的第一磁性层（AP1），第二磁性层（AP2）和反平行耦合层。 AP1层与反铁磁材料层（AFM层）相邻，并被构造成具有长的自旋扩散长度。 AP1层的长自旋扩散长度使AP1层的负GMR贡献最小化，从而增加了传感器的总体GMR效应。

公开(公告)号：US07298597B2

公开(公告)日：2007-11-20

申请号：US11093342

申请日：2005-03-29

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3903 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3932 ,  H01L43/08

摘要： A magnetoresistive sensor based on the spin accumulation effect has an in-stack biasing structure with a ferromagnetic biasing layer that is magnetically-coupled orthogonally with the sensor free ferromagnetic layer across a spacer layer. The sensor has an electrically conductive strip with a first tunnel barrier and a free ferromagnetic layer on the front or sensing end of the strip and second tunnel barrier and a fixed ferromagnetic layer on the back end of the strip. A magnetically-coupling spacer layer is formed on the free layer and the ferromagnetic biasing layer is formed on the spacer layer. The magnetically-coupling layer induces direct orthogonal magnetic coupling between the in-plane magnetization directions of the biasing layer and the free layer.

摘要翻译： 基于自旋累积效应的磁阻传感器具有堆叠偏置结构，其中铁磁偏置层与穿过间隔层的传感器自由铁磁层正交地磁耦合。 传感器具有导电条带，其具有第一隧道势垒和在条带的前部或感测端上的自由铁磁层和第二隧道势垒以及带的后端上的固定铁磁层。 在自由层上形成磁耦合间隔层，并且在间隔层上形成铁磁偏置层。 磁耦合层在偏置层的面内磁化方向和自由层之间引起直接正交磁耦合。

公开(公告)号：US20070253119A1

公开(公告)日：2007-11-01

申请号：US11380625

申请日：2006-04-27

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  Neil Smith

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat ,  Neil Smith

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B2005/3996

摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thicknesses of FL1 and FL2 are chosen to obtain the desired net free layer magnetic moment/area for the sensor, and the thickness of FL1 is preferably chosen to be greater than the spin-diffusion length of the electrons in the FL1 material to maximize the bulk spin-dependent scattering of electrons and thus maximize the sensor signal. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.

摘要翻译： 电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。 （APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上 反平行磁化方向，并且在存在磁场的情况下一起旋转。 选择FL1和FL2的厚度以获得用于传感器的期望的净自由层磁矩/面积，并且FL1的厚度优选地选择为大于FL1材料中的电子的自旋扩散长度以使 电子的体自旋依赖散射，从而使传感器信号最大化。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

公开(公告)号：US20070109693A1

公开(公告)日：2007-05-17

申请号：US11281054

申请日：2005-11-16

申请人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

发明人： Matthew Carey ,  Jeffrey Childress ,  Stefan Maat

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3263 ,  H01L43/10

摘要： A magnetic head including a CPP GMR read sensor that includes a reference layer, a free magnetic layer and a spacer layer that is disposed between them, where the free magnetic layer and the reference magnetic layer are each comprised of Co2MnX where X is a material selected from the group consisting of Ge, Si, Al, Ga and Sn, and where the spacer layer is comprised of a material selected from the group consisting of Ni3Sn, Ni3Sb, Ni2LiGe, Ni2LiSi, Ni2CuSn, Ni2CuSb, Cu2NiSn, Cu2NiSb, Cu2LiGe and Ag2LiSn. Further embodiments include a dual spin valve sensor where the free magnetic layers and the reference layers are each comprised of Heusler alloys. A further illustrative embodiment includes a laminated magnetic layer structure where the magnetic layers are each comprised of a ferromagnetic Heusler alloy, and where the spacer layers are comprised of a nonmagnetic Heusler alloy.

摘要翻译： 包括CPP GMR读取传感器的磁头包括参考层，自由磁性层和设置在它们之间的间隔层，其中自由磁性层和参考磁性层各自包含Co 2， SUB> MnX，其中X是选自Ge，Si，Al，Ga和Sn的材料，并且其中间隔层由选自Ni 3 Sn的材料构成 ，Ni 3 Sb，Ni 2 LiGe，Ni 2 LiSi，Ni 2 CuSn，Ni 2 CuSb，Cu 2 NiSn，Cu 2 NiSb，Cu 2 LiGe和Ag 2 LiSn。 另外的实施例包括双自旋阀传感器，其中自由磁性层和参考层各自由Heusler合金构成。 另外的说明性实施例包括层叠磁性层结构，其中磁性层各自包含铁磁Heusler合金，并且其中间隔层由非磁性Heusler合金构成。