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141 条记录 (耗时 0.031 秒)

    MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER
    1.
    发明申请
    MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER 审中-公开
    磁记录系统，具有与抗磁反应转移层交换耦合到记录层的介质

    公开(公告)号：US20080100964A1

    公开(公告)日：2008-05-01

    申请号：US11553215

    申请日：2006-10-26

    申请人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

    发明人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

    IPC分类号： G11B5/82 ,  G11B5/65

    CPC分类号： G11B5/64 ,  G11B5/1278 ,  G11B5/3103

    摘要： A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.

    摘要翻译： 磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁（AF-F）过渡层的双层记录介质。 过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度（T AF AF F F）。 因此，过渡层具有过渡场H AF-F（T），其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场，而不需要加热该层。 在环境温度下和在不存在的情况下，过渡层是反铁磁性的，并且双层的开关场H 0正好是H

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
    3.
    发明授权
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer 失效
    使用倾斜蚀刻底层的磁性读取传感器，用于在自偏压自由层中诱导单轴磁各向异性

    公开(公告)号：US07382586B2

    公开(公告)日：2008-06-03

    申请号：US11177990

    申请日：2005-07-07

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

    摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。

    MEMORY ARRAY HAVING MEMORY CELLS FORMED FROM METALLIC MATERIAL
    5.
    发明申请
    MEMORY ARRAY HAVING MEMORY CELLS FORMED FROM METALLIC MATERIAL 有权
    具有从金属材料形成的记忆细胞的记忆阵列

    公开(公告)号：US20070253243A1

    公开(公告)日：2007-11-01

    申请号：US11380498

    申请日：2006-04-27

    申请人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    发明人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/1675

    摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

    摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。

    Memory array having memory cells formed from metallic material
    6.
    发明授权
    Memory array having memory cells formed from metallic material 有权
    具有由金属材料形成的存储单元的存储器阵列

    公开(公告)号：US07615771B2

    公开(公告)日：2009-11-10

    申请号：US11380498

    申请日：2006-04-27

    申请人： Robert E. Fontana, Jr. ,  Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    发明人： Robert E. Fontana, Jr. ,  Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    IPC分类号： H01L27/20

    CPC分类号： G11C11/16 ,  G11C11/1675

    摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

    摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。

    Method for thermally-assisted recording on a magnetic recording disk
    7.
    发明授权
    Method for thermally-assisted recording on a magnetic recording disk 失效
    在磁记录盘上进行热辅助记录的方法

    公开(公告)号：US06834026B2

    公开(公告)日：2004-12-21

    申请号：US10626362

    申请日：2003-07-23

    申请人： Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    发明人： Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    IPC分类号： G11B1100

    CPC分类号： G11B5/66 ,  G11B5/82 ,  G11B2005/0002 ,  G11B2005/0021 ,  Y10T428/24802

    摘要： A magnetic recording medium for thermally-assisted recording is a bilayer of a high-coercivity, high-anisotropy ferromagnetic material like FePt and a switching material like FeRh or Fe(RhM) (where M is Ir, Pt, Ru, Re or Os) that exhibits a switch from antiferromagnetic to ferromagnetic at a transition temperature less than the Curie temperature of the high-coercivity material. The high-coercivity recording layer and the switching layer are exchange coupled ferromagnetically when the switching layer is in its ferromagnetic state. To write data the bilayer medium is heated above the transition temperature of the switching layer. When the switching layer becomes ferromagnetic, the total magnetization of the bilayer is increased, and consequently the switching field required to reverse a magnetized bit is decreased without lowering the anisotropy of the recording layer. The magnetic bit pattern is recorded in both the recording layer and the switching layer. When the media is cooled to below the transition temperature of the switching layer, the switching layer becomes antiferromagnetic and the bit pattern remains in the high-anisotropy recording layer.

    摘要翻译： 用于热辅助记录的磁记录介质是诸如FePt的高矫顽力，高各向异性铁磁材料和诸如FeRh或Fe（RhM）（其中M是Ir，Pt，Ru，Re或Os）的开关材料的双层， 其在低于高矫顽力材料的居里温度的转变温度下表现出从反铁磁转变为铁磁。 当高矫顽力记录层和开关层在开关层处于其铁磁状态时，铁磁性交换耦合。 为了写入数据，双层介质被加热到开关层的转变温度之上。 当开关层成为铁磁性时，双层的总磁化强度增加，因此在不降低记录层的各向异性的情况下降低了使磁化位反转所需的切换场。 磁记录层记录在记录层和切换层中。 当介质冷却到切换层的转变温度以下时，开关层变为反铁磁性，并且位图形保留在高各向异性记录层中。