公开(公告)号：US5508550A

公开(公告)日：1996-04-16

申请号：US345337

申请日：1994-11-21

申请人： Masakazu Morishita ,  Shigetoshi Sugawa ,  Toru Koizumi

发明人： Masakazu Morishita ,  Shigetoshi Sugawa ,  Toru Koizumi

IPC分类号： H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/07 ,  H01L29/10 ,  H01L29/73 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/78696 ,  H01L27/0623 ,  H01L27/0722 ,  H01L29/1087 ,  H01L29/7317 ,  H01L29/739 ,  H01L29/7838 ,  H01L29/78654

摘要： A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

摘要翻译： 半导体器件具有由具有源极和漏极区域的半导体制成的晶体管，沟道区域，栅极绝缘膜和栅极电极。 栅电极连接到沟道区的一部分。 沟道区具有与源极和漏极区相同的导电类型，并且其杂质浓度低于源极和漏极区的杂质浓度。

公开(公告)号：US5486704A

公开(公告)日：1996-01-23

申请号：US118751

申请日：1993-09-10

申请人： Masakazu Morishita

发明人： Masakazu Morishita

IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/73 ,  H01L29/72

CPC分类号： H01L29/66234 ,  H01L29/0895 ,  H01L29/7311

摘要： A semiconductor devive comprises;a collector region of first conductivity type;a base region of second conductivity type;an emitter region of the first conductivity type;a thin film provided on the emitter region and capable of flowing therein a tunnel current; anda polycrystalline layer laminated on the thin film.An energy .DELTA..phi..sub.B of potential barrier formed at a grain boundary is not less than a heat energy kT at a temperature therein.

摘要翻译： 半导体设备包括： 第一导电类型的集电极区域; 第二导电类型的基极区; 第一导电类型的发射极区域; 设置在发射极区域上并能够在其中流动隧道电流的薄膜; 和层叠在薄膜上的多晶层。 在晶界处形成的势垒的能量DELTA phi B不小于其中的温度下的热能kT。

公开(公告)号：US5245204A

公开(公告)日：1993-09-14

申请号：US872506

申请日：1992-04-23

申请人： Masakazu Morishita

发明人： Masakazu Morishita

IPC分类号： H01L27/146 ,  H01L29/737 ,  H01L31/11

CPC分类号： H01L27/14681 ,  H01L29/7378 ,  H01L31/1105

摘要： A semiconductor device comprises a collector region of first conductivity type, a base region of second conductivity type, and an emitter region of first conductivity. The base region has first base area and second base area provided around the first base area. A band gap width of said second base area is greater than that of the first base area.

摘要翻译： 半导体器件包括第一导电类型的集电极区域，第二导电类型的基极区域和第一导电类型的发射极区域。 基部区域具有围绕第一基部区域设置的第一基底区域和第二基底区域。 所述第二基区的带隙宽度大于第一基区的带隙宽度。

公开(公告)号：US08787527B2

公开(公告)日：2014-07-22

申请号：US13114144

申请日：2011-05-24

申请人： Osamu Tsujii ,  Masakazu Morishita ,  Masahiko Okunuki ,  Satoshi Shimizu

发明人： Osamu Tsujii ,  Masakazu Morishita ,  Masahiko Okunuki ,  Satoshi Shimizu

IPC分类号： A61B6/04

CPC分类号： A61B5/0035 ,  A61B5/0075 ,  A61B5/0091 ,  A61B5/4312 ,  A61B5/708 ,  A61B6/0414 ,  A61B6/4035 ,  A61B6/4233 ,  A61B6/4291 ,  A61B6/4417 ,  A61B6/463 ,  A61B6/502 ,  A61B6/5247 ,  A61B6/542 ,  A61B2562/17

摘要： A mammography apparatus includes a detector that detects X-rays transmitted through a breast, and an optically transparent or semitransparent pressing panel for pressing the breast. The apparatus further includes a near infrared ray source that provided between the X-ray source and the pressing panel and arranged in a two-dimensional shape in alignment with the pressing panel, and that is movable between a first position in close contact with the pressing panel and a second position outside an X-ray image capture region. Near infrared image capture is carried out using the near infrared ray source by causing the near infrared ray source to be in the first position, and the near infrared ray source is caused to retract to the second position when carrying out X-ray image capture using the X-ray source.

摘要翻译： 乳房摄影装置包括检测透过乳房的X射线检测器和用于按压乳房的光学透明或半透明按压面板。 该装置还包括近红外线源，其设置在X射线源和按压面板之间，并且与按压面板对准地配置成二维形状，并且能够在与按压面紧密接触的第一位置之间移动 面板和X射线图像捕获区域外的第二位置。 通过使近红外线源处于第一位置，使用近红外线源进行近红外图像捕捉，并且在进行X射线图像捕获时使近红外线源退回至第二位置 X射线源。

公开(公告)号：US07643077B2

公开(公告)日：2010-01-05

申请号：US11620997

申请日：2007-01-08

申请人： Tadao Endo ,  Noriyuki Kaifu ,  Toshiaki Sato ,  Masakazu Morishita

发明人： Tadao Endo ,  Noriyuki Kaifu ,  Toshiaki Sato ,  Masakazu Morishita

IPC分类号： H04N3/14

CPC分类号： H04N5/363 ,  H01L27/14609 ,  H04N5/32 ,  H04N5/335 ,  H04N5/365 ,  H04N5/3742 ,  H04N5/378

摘要： In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.

摘要翻译： 为了提供一种光电转换装置，其是读取速度高，S / N高，色调级高，成本低的装置，具有包含多个光电转换元件的光电转换电路部，切换 为了输出并行信号而配置在同一基板上的元件，矩阵信号线和栅极驱动线，用于向栅极驱动线施加驱动信号的驱动电路部，以及用于将通过 矩阵信号线连接到串行信号以输出它们，其中读取电路部分包括与每个矩阵信号线连接的至少一个模拟运算放大器，用于传送来自各个矩阵信号线的输出信号的转换开关，通过每个放大器输出的读数 电容器和读取开关，用于连续读取readi中的信号 串联信号形式的电容器。

公开(公告)号：US06838673B2

公开(公告)日：2005-01-04

申请号：US09984174

申请日：2001-10-29

申请人： Masakazu Morishita

发明人： Masakazu Morishita

IPC分类号： G01T1/24 ,  A61B6/00 ,  G01T1/00 ,  G01T1/29 ,  H01L27/14 ,  H01L27/146 ,  H01L31/09 ,  H04N5/32 ,  H05G1/26

CPC分类号： H01L27/14663 ,  A61B6/00 ,  A61B6/4233 ,  A61B6/542 ,  G01T1/2928 ,  H01L27/14661

摘要： An electromagnetic wave detecting device is provided, which comprises: a detecting unit for transforming an electromagnetic wave into an electric charge for detection, a reset unit for resetting the potential of the detecting unit, a storing unit for storing a signal electric charge generated in the detecting unit by the electromagnetic wave, a first reading unit for reading the signal electric charge, and a second reading unit for reading the potential of the signal electric charge stored in the storing unit in a nondestructive manner.

摘要翻译： 提供了一种电磁波检测装置，包括：用于将电磁波变换成用于检测的电荷的检测单元，用于复位检测单元的电位的复位单元;存储单元，用于存储在 通过电磁波检测单元，读取信号电荷的第一读取单元和用于以非破坏性方式读取存储在存储单元中的信号电荷的电位的第二读取单元。

公开(公告)号：US06784492B1

公开(公告)日：2004-08-31

申请号：US08250942

申请日：1994-05-31

申请人： Masakazu Morishita

发明人： Masakazu Morishita

IPC分类号： H01L2701

CPC分类号： H01L29/105 ,  H01L29/1033 ,  H01L29/78

摘要： A semiconductor device comprises at least a semiconductor layer including source and drain areas of a first conductive type and of a high impurity concentration and a channel area positioned between the source and drain areas, an insulation layer covering at least the channel area, and a gate electrode positioned close to the insulation layer. The channel area at least comprises a first channel area of a low resistance, positioned close to the insulation layer and having a second conductive type opposite to the first conductive type, and a second channel area of a high resistance, having the first conductive type and positioned adjacent to the first channel area.

摘要翻译： 半导体器件至少包括半导体层，其包括第一导电类型和高杂质浓度的源极和漏极区域以及位于源极和漏极区域之间的沟道区域，至少覆盖沟道区域的绝缘层和栅极 电极靠近绝缘层定位。 通道区域至少包括低电阻的第一通道区域，其位于绝缘层附近并且具有与第一导电类型相反的第二导电类型和具有第一导电类型的高电阻的第二沟道区域，以及 定位在第一通道区域附近。

公开(公告)号：US06489618B1

公开(公告)日：2002-12-03

申请号：US09627446

申请日：2000-07-27

申请人： Masakazu Morishita

发明人： Masakazu Morishita

IPC分类号： G01T124

CPC分类号： H04N5/3597 ,  H01L27/14634 ,  H01L27/14676 ,  H04N5/32 ,  H04N5/3594 ,  H04N5/374

摘要： A radiation image pickup device having the linearity of a sensor sensitivity preferably used for medical care and non-destructive examination. The radiation image pickup device comprises a plurality of input pixels comprising electric charge converting means for converting an incident radiation into electric charges, electric charge storing means for storing the electric charges converted by the electric charge converting means, and control means for controlling an electric field applied to the electric charge converting means, provided between the electric charge converting means and the electric charge storing means. Reading means is provided for reading the electric charges stored in the electric charge storing means or for reading a signal based on the potential due to electric charges stored in the electric charge storing means. An output line outputs the electric charges read from the plurality of input pixels, connected with the plurality of input pixels, and switching means resets the electric charge storing means.

摘要翻译： 具有优选用于医疗保健和非破坏性检查的传感器灵敏度的线性的放射线图像拾取装置。 放射线图像拾取装置包括多个输入像素，包括用于将入射辐射转换成电荷的电荷转换装置，用于存储由电荷转换装置转换的电荷的电荷存储装置，以及用于控制电场的控制装置 施加到电荷转换装置和电荷存储装置之间的电荷转换装置。 提供读取装置，用于读取存储在电荷存储装置中的电荷或用于基于由电荷存储装置中存储的电荷引起的电位读取信号。 输出线输出与多个输入像素连接的多个输入像素读取的电荷，切换单元复位电荷存储单元。

公开(公告)号：US06295390B1

公开(公告)日：2001-09-25

申请号：US08512699

申请日：1995-08-08

申请人： Isao Kobayashi ,  Hidemasa Mizutani ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Masakazu Morishita

发明人： Isao Kobayashi ,  Hidemasa Mizutani ,  Noriyuki Kaifu ,  Shinichi Takeda ,  Masakazu Morishita

IPC分类号： G06K922

CPC分类号： H04N1/02805 ,  H04N1/028 ,  H04N1/195 ,  H04N2201/043

摘要： A two-dimensional image input unit is disposed on one surface, and data processed by an image processing circuit for processing an image input by the image input unit can be displayed on a two-dimensional image output unit disposed on the other surface as a rear surface with respect to the one surface. Size and cost reductions of the entire apparatus are attained, and read image information can be displayed on the image output surface as the upper surface in real time.

摘要翻译： 二维图像输入单元设置在一个表面上，并且由用于处理由图像输入单元输入的图像的图像处理电路处理的数据可以显示在设置在另一表面上的二维图像输出单元上，作为后部 表面相对于一个表面。 实现了整个装置的尺寸和成本的降低，并且可以将图像信息作为上表面实时显示在图像输出面上。

公开(公告)号：US5998854A

公开(公告)日：1999-12-07

申请号：US934611

申请日：1997-09-22

申请人： Masakazu Morishita ,  Shigetoshi Sugawa ,  Toru Koizumi

发明人： Masakazu Morishita ,  Shigetoshi Sugawa ,  Toru Koizumi

IPC分类号： H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/07 ,  H01L29/10 ,  H01L29/73 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L29/78696 ,  H01L27/0623 ,  H01L27/0722 ,  H01L29/1087 ,  H01L29/7317 ,  H01L29/739 ,  H01L29/7838 ,  H01L29/78654

摘要： A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

摘要翻译： 半导体器件具有由具有源极和漏极区域的半导体制成的晶体管，沟道区域，栅极绝缘膜和栅极电极。 栅电极连接到沟道区的一部分。 沟道区具有与源极和漏极区相同的导电类型，并且其杂质浓度低于源极和漏极区的杂质浓度。