TMR Device with Low Magnetorestriction Free Layer
    91.
    发明申请
    TMR Device with Low Magnetorestriction Free Layer 有权
    低磁阻自由层的TMR器件

    公开(公告)号:US20120193738A1

    公开(公告)日:2012-08-02

    申请号:US13444497

    申请日:2012-04-11

    IPC分类号: H01L29/82

    摘要: A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA

    摘要翻译: 通过采用由FeCo / CoFeB / CoB,FeCo / CoB / CoFeB,FeCo / CoFe / CoB或FeCo / FeB / CoB表示的三层结构的自由层制造高性能TMR传感器。 或者,通过共溅射CoB与CoNiFe或CoNiFeM(其中M是V,Ti,Zr,Nb,Hf,Ta或Mo)分别形成的CoNiFeB或CoNiFeBM可以包括在复合自由层中或作为单个自由层 CoNiFeBM的情况。 在保持低Hc和RA <3欧姆 - um2的同时,实现了常规CoFe / NiFe自由层的TMR比提高15至30%。 在双层或三层实施例中,通过组合CoB(-λ)和一个或多个具有正λ的层来实现-5×10-6和5×10-6之间的磁致伸缩(λ)。

    TMR DEVICE WITH IMPROVED MGO BARRIER
    92.
    发明申请
    TMR DEVICE WITH IMPROVED MGO BARRIER 有权
    具有改进的MGO障碍物的TMR装置

    公开(公告)号:US20120128870A1

    公开(公告)日:2012-05-24

    申请号:US12927698

    申请日:2010-11-22

    IPC分类号: H01F1/047

    摘要: A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.

    摘要翻译: 公开了一种形成高性能磁隧道结(MTJ)的方法,其中隧道势垒包括至少三个金属氧化物层。 通过沉积第一金属层,执行自然氧化(NOX)工艺,沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。 在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化,并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。 在替代实施例中,在最上层金属层被沉积​​之前,在MOX1层上形成多个金属氧化物层。 所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA,并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

    VIRICIDAL AND MICROBICIDAL COMPOSITIONS AND USES THEREOF
    93.
    发明申请
    VIRICIDAL AND MICROBICIDAL COMPOSITIONS AND USES THEREOF 审中-公开
    VIRICIDAL和MICROBICIDAL组合物及其用途

    公开(公告)号:US20120121679A1

    公开(公告)日:2012-05-17

    申请号:US13350315

    申请日:2012-01-13

    摘要: The present disclosure encompasses compositions comprising a surfactant, and an acid such as, but not limited to, levulinic acid, that together have a synergistic effect in reducing the viability of a virus population compared to the efficacy of the individual compounds. This synergy allows the formulation of compositions where the active agents (including an acid and a surfactant) are present at concentrations effective to inactivate viruses on surfaces, including human skin. The viricidal compositions disclosed herein are efficacious without damaging the surface to which they may be applied, or even altering the organoleptic properties of a treated food substance. The viricidal compositions and wipes containing such compositions are suitable for sanitizing any surface suspected of having a viral load thereon, or where it is desirable to ensure that a viral load is as low as possible.

    摘要翻译: 本公开内容涵盖包含表面活性剂和酸(例如但不限于乙酰丙酸)的组合物,与单独化合物的功效相比,它们在降低病毒群体的存活力方面具有协同效应。 这种协同作用允许组合物的配制,其中活性剂(包括酸和表面活性剂)以有效灭活表面(包括人皮肤)上的病毒的浓度存在。 本文公开的杀病毒组合物是有效的,而不损害它们可以施用的表面,甚至改变经处理的食物的感官特性。 含有这种组合物的杀病毒组合物和擦拭物适于消毒任何怀疑患有病毒载量的表面,或者希望确保病毒载量尽可能低。

    ANTIMICROBIAL COMPOSITION AND USE
    97.
    发明申请
    ANTIMICROBIAL COMPOSITION AND USE 审中-公开
    抗微生物组合物和用途

    公开(公告)号:US20110054026A1

    公开(公告)日:2011-03-03

    申请号:US12811560

    申请日:2009-05-21

    IPC分类号: A01N37/42 C12N1/36 A01P1/00

    摘要: Antimicrobial compositions are provided comprising a pharmaceutically acceptable organic acid and a pharmaceutically acceptable surfactant. This synergistic combination allows compositions to be formulated at low concentrations that have efficacy in reducing bacterial counts by greater than 3 log within 5 minutes of contact while preserving the organoleptic properties of treated foods, including fresh produce. As shown in FIG. 1C the efficacy of six different compositions (A. 3% levulinic acid plus 2% SDS; B. 2% levulinic acid plus 1% SDS; C. 0.5% levulinic acid plus 0.05% SDS; D. 3% levulinic acid; E. 2% SDS and F. water) were tested for their ability to kill spores of Bacillus anthracis Sterne after 45 minutes of contact.

    摘要翻译: 提供了包含药学上可接受的有机酸和药学上可接受的表面活性剂的抗微生物组合物。 这种协同组合允许组合物以低浓度配制,其具有在接触5分钟内减少细菌计数大于3log的功效,同时保持经处理的食物(包括新鲜产品)的感官特性。 如图所示。 1C三种不同组合物(A. 3%乙酰丙酸加2%SDS; B.2%乙酰丙酸加1%SDS; C.0.5%乙酰丙酸加0.05%SDS; D.3%乙酰丙酸; E. 2%SDS和F.水)在接触45分钟后测试其杀死炭疽芽孢杆菌孢子的能力。

    VOLTAGE PATTERN FOR FERROELECTRIC RECORDING HEAD
    98.
    发明申请
    VOLTAGE PATTERN FOR FERROELECTRIC RECORDING HEAD 有权
    电磁记录头电压模式

    公开(公告)号:US20110038246A1

    公开(公告)日:2011-02-17

    申请号:US12539880

    申请日:2009-08-12

    IPC分类号: G11B9/00

    CPC分类号: G11B9/02

    摘要: The presently disclosed technology teaches an improved voltage pattern for conductive tips utilized as moveable top electrodes for writing data bits into ferroelectric media. A conductive tip is dragged in contact or near contact with a ferroelectric surface forming a moveable top electrode on a ferroelectric media disk. A metallic film is deposited onto a bottom-side of the ferroelectric media forming a conductive bottom electrode. Applying electrical voltage pulses between the conductive tip and the bottom electrode induces polarization switching of the ferroelectric media under the head. The improved voltage pattern incorporates positive and negative overshoot voltages to induce a polarization switch in the ferroelectric media and positive and negative drag voltages to expand a polarized region on the ferroelectric media. Potential benefits of the improved voltage pattern include reduced cross-track blooming and reduced along-track blooming resulting in a more uniform track width and bit series length.

    摘要翻译: 目前公开的技术教导了用作用于将数据位写入铁电介质的可移动顶部电极的导电尖端的改进的电压图案。 导电尖端与形成铁电介质盘上的可移动顶部电极的铁电表面接触或接触接触。 金属膜沉积在形成导电底电极的铁电介质的底侧上。 在导电尖端和底部电极之间施加电压脉冲引起磁头下的铁电介质的极化转换。 改进的电压模式包括正和负的过冲电压以在铁电介质中引起偏振开关,以及正和负阻力电压以扩展铁电介质上的极化区域。 改进的电压模式的潜在优点包括减少的交叉轨迹开花和减少的沿轨道开度,导致更均匀的轨道宽度和位串联长度。

    Asymmetric write for ferroelectric storage
    99.
    发明授权
    Asymmetric write for ferroelectric storage 有权
    铁电存储不对称写

    公开(公告)号:US07796494B2

    公开(公告)日:2010-09-14

    申请号:US12198419

    申请日:2008-08-26

    IPC分类号: G11B9/00

    CPC分类号: G11B9/02

    摘要: A method of writing to ferroelectric storage medium includes the steps of applying a first write voltage to a ferroelectric layer for writing a first bit in a first polarization direction and applying a second write voltage to the ferroelectric layer for writing a second bit in a second polarization direction opposing the first polarization direction. The first write voltage having a first magnitude, and the second write voltage having a second magnitude being greater than the first magnitude. The ferroelectric layer having a ferroelectric imprint polarization direction, and the first polarization direction being substantially the same as the ferroelectric imprint polarization direction. The ferroelectric medium contains first bits with a first surface area that is substantially equal to second bits surface area. A probe storage apparatus can use this method and ferroelectric medium.

    摘要翻译: 写入铁电存储介质的方法包括以下步骤:将第一写入电压施加到用于在第一极化方向上写入第一位的铁电层,并将第二写入电压施加到用于在第二极化中写入第二位的铁电层 方向与第一偏振方向相反。 所述第一写入电压具有第一幅度,并且所述第二写入电压具有大于所述第一幅度的第二幅度。 铁电层具有铁电印记偏振方向,第一偏振方向与铁电印刷极化方向大致相同。 铁电介质包含第一位,其第一表面积基本上等于第二位表面积。 探针存储装置可以使用这种方法和铁电介质。

    Ferroelectric polarization pattern with differing feedback signals
    100.
    发明授权
    Ferroelectric polarization pattern with differing feedback signals 有权
    具有不同反馈信号的铁电偏振模式

    公开(公告)号:US07792009B2

    公开(公告)日:2010-09-07

    申请号:US11865806

    申请日:2007-10-02

    IPC分类号: G11B7/00

    CPC分类号: G11B9/02 Y10S977/943

    摘要: A ferroelectric polarization pattern with differing feedback signals. An apparatus including a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a first switchable polarization state domain and a second switchable polarization state domain that are both switchable by an applied signal. The first switchable polarization state domain has a first feedback signal in response to the applied signal that is different than a second feedback signal of the second switchable polarization state domain at the applied signal.

    摘要翻译: 具有不同反馈信号的铁电极化图案。 一种包括铁电层和在铁电体层中配置的表示位置数据的偏振图案的装置。 极化图案具有可由施加的信号切换的第一可切换偏振状态域和第二可切换偏振状态域。 第一可切换偏振态域具有响应于施加的信号的第一反馈信号,所施加的信号与施加的信号处的第二可切换偏振状态域的第二反馈信号不同。