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公开(公告)号：US08497526B2
公开(公告)日：2013-07-30
申请号：US12925277
申请日：2010-10-18
IPC分类号： H01L29/66
CPC分类号： H01L29/87 , H01L27/0262 , H01L29/66121
摘要： In a DIAC-like device that includes an n+ and a p+ region connected to the high voltage node, and an n+ and a p+ region connected to the low voltage node, at least two MOS devices are formed between the n+ and p+ region connected to the high voltage node, and the n+ and p+ region connected to the low voltage node.
摘要翻译： 在包括连接到高压节点的n +和p +区以及连接到低电压节点的n +和p +区的DIAC类器件中，在连接到低电压节点的n +和p +区之间形成至少两个MOS器件 高压节点，连接到低电压节点的n +和p +区域。
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公开(公告)号：US08212320B1
公开(公告)日：2012-07-03
申请号：US11375831
申请日：2006-03-15
IPC分类号： H01L23/62
CPC分类号： H01L27/0259
摘要： In an ESD clamp formed in a SOI process, voltage tolerance is increased by introducing multiple blocking junctions between the anode and cathode of the device.
摘要翻译： 在SOI工艺中形成的ESD钳位中，通过在器件的阳极和阴极之间引入多个阻挡接头来增加电压容差。
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公开(公告)号：US07911869B1
公开(公告)日：2011-03-22
申请号：US11198688
申请日：2005-08-05
摘要： In a programmable circuit making use of fuse cells, a snapback NMOS or NPN transistor or SCR without reversible snapback capability is used as an anti-fuse, and programming comprises biasing the control electrode of the transistor to cause the transistor to go into snapback mode.
摘要翻译： 在使用熔丝单元的可编程电路中，使用不具有可逆快速恢复能力的快速恢复NMOS或NPN晶体管或SCR作为反熔丝，并且编程包括偏置晶体管的控制电极以使晶体管进入快速恢复模式。
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公开(公告)号：US07910950B1
公开(公告)日：2011-03-22
申请号：US11403599
申请日：2006-04-13
IPC分类号： H01L29/66
CPC分类号： H01L27/0266 , H01L29/063 , H01L29/7428 , H01L29/7436 , H01L29/749
摘要： In an LDMOS-SCR ESD protection structure gate voltage of an ESD protection LDSCR is defined by connecting the gate to the source of a reference LDSCR. The reference LDSCR is implemented as a self-triggering device in which the snapback drain-source voltage (avalanche breakdown voltage) is controlled to be lower than that for the major LDSCR by adjusting the RESURF layer-composite overlap for the reference LDSCR to be different to that of the major LDSCR.
摘要翻译： 在LDMOS-SCR ESD保护结构中，通过将栅极连接到参考LDSCR的源极来定义ESD保护LDSCR的栅极电压。 参考LDSCR被实现为自触发装置，其中通过将参考LDSCR的RESURF层 - 复合重叠调整为不同，将回跳式漏极 - 源极电压（雪崩击穿电压）控制为低于主LDSCR的电压 到LDSCR主要的。
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公开(公告)号：US20100295638A1
公开(公告)日：2010-11-25
申请号：US12852743
申请日：2010-08-09
CPC分类号： H02M3/34
摘要： A MEMS magnetic flux switch is fabricated as a ferromagnetic core. The core includes a center cantilever that is fabricated as a free beam that can oscillate at a resonant frequency that is determined by its mechanical and material properties. The center cantilever is moved by impulses applied by an associated motion oscillator, which can be magnetic or electric actuators.
摘要翻译： MEMS磁通开关被制造为铁磁芯。 芯包括中心悬臂，其被制造为可以以其机械和材料性质确定的共振频率振荡的自由梁。 中心悬臂由相关运动振荡器施加的脉冲移动，运动振荡器可以是磁性或电动执行器。
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公开(公告)号：US07794510B1
公开(公告)日：2010-09-14
申请号：US10988297
申请日：2004-11-12
CPC分类号： H01M10/42 , H01M2/361 , H01M10/0472 , H01M10/4257 , Y10T29/49108
摘要： In an on chip battery and method of making an on-chip battery, the electrodes are formed from metal layers deposited as part of the chip fabrication process. An electrolyte is preferably introduced between the electrodes at time of packaging of the chip.
摘要翻译： 在片上电池和制造片上电池的方法中，电极由作为芯片制造工艺的一部分沉积的金属层形成。 在芯片封装时，优选在电极之间引入电解质。
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公开(公告)号：US07514751B2
公开(公告)日：2009-04-07
申请号：US11890097
申请日：2007-08-02
IPC分类号： H01L23/62
CPC分类号： H01L27/0259
摘要： A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very thin collector region. ESD protection for a pair of to-be-protected pads is provided by utilizing the base structures and the emitter structures of the SiGe transistors.
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98.发明授权公开(公告)号：US07193251B1
公开(公告)日：2007-03-20
申请号：US10339192
申请日：2003-01-09
IPC分类号： H01L29/74
CPC分类号： H01L27/0262
摘要： In multiple port chip circuit, an ESD protection circuit and method of protecting the ports of the multiple port circuit, includes providing a plurality of bi-directional snapback devices such as DIACs and connecting only one electrode to ground while connecting the other electrodes to the ports that are to be protected.
摘要翻译： 在多端口芯片电路中，ESD保护电路和保护多端口电路端口的方法包括：提供多个双向快速恢复装置，例如DIAC，并且仅将一个电极连接到地，同时将其它电极连接到端口 那些被保护。
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公开(公告)号：US07057867B1
公开(公告)日：2006-06-06
申请号：US10851516
申请日：2004-05-21
IPC分类号： H02H9/00
CPC分类号： H01L27/0259 , H01L27/0266
摘要： Electrostatic discharge (ESD) protection clamp circuitry including current tunneling circuitry to provide control current for controlling current shunting circuitry for shunting ESD current from the protected signal terminal.
摘要翻译： 静电放电（ESD）保护钳位电路，包括电流隧道电路，以提供控制电流，用于控制电流分流电路，用于从受保护的信号端子分流ESD电流。
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公开(公告)号：US07057215B1
公开(公告)日：2006-06-06
申请号：US10210948
申请日：2002-08-02
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L27/0266 , H01L29/87
摘要： In an ESD protection device making use of a LVTSCR-like structure or an IGBT-like structure, negative polarity over-voltage protection is achieved by providing a LVTSCR-like structure or IGBT-like structure that defines a PMOS device.
摘要翻译： 在使用LVTSCR结构或类IGBT结构的ESD保护器件中，通过提供限定PMOS器件的类似LVTSCR的结构或类IGBT结构来实现负极性过电压保护。
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