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公开(公告)号：US07839242B1
公开(公告)日：2010-11-23
申请号：US11893535
申请日：2007-08-16
IPC分类号： H01H51/34
CPC分类号： H02M3/34
摘要： A MEMS magnetic flux switch is fabricated as a ferromagnetic core. The core includes a center cantilever that is fabricated as a free beam that can oscillate at a resonant frequency that is determined by its mechanical and material properties. The center cantilever is moved by impulses applied by an associated motion oscillator, which can be magnetic or electric actuators.
摘要翻译： MEMS磁通开关被制造为铁磁芯。 芯包括中心悬臂，其被制造为可以以其机械和材料性质确定的共振频率振荡的自由梁。 中心悬臂由相关运动振荡器施加的脉冲移动，运动振荡器可以是磁性或电动执行器。
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公开(公告)号：US08098121B2
公开(公告)日：2012-01-17
申请号：US12852743
申请日：2010-08-09
CPC分类号： H02M3/34
摘要： A MEMS magnetic flux switch is fabricated as a ferromagnetic core. The core includes a center cantilever that is fabricated as a free beam that can oscillate at a resonant frequency that is determined by its mechanical and material properties. The center cantilever is moved by impulses applied by an associated motion oscillator, which can be magnetic or electric actuators.
摘要翻译： MEMS磁通开关被制造为铁磁芯。 芯包括中心悬臂，其被制造为可以以其机械和材料性质确定的共振频率振荡的自由梁。 中心悬臂由相关运动振荡器施加的脉冲移动，运动振荡器可以是磁性或电动执行器。
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公开(公告)号：US20100295638A1
公开(公告)日：2010-11-25
申请号：US12852743
申请日：2010-08-09
CPC分类号： H02M3/34
摘要： A MEMS magnetic flux switch is fabricated as a ferromagnetic core. The core includes a center cantilever that is fabricated as a free beam that can oscillate at a resonant frequency that is determined by its mechanical and material properties. The center cantilever is moved by impulses applied by an associated motion oscillator, which can be magnetic or electric actuators.
摘要翻译： MEMS磁通开关被制造为铁磁芯。 芯包括中心悬臂，其被制造为可以以其机械和材料性质确定的共振频率振荡的自由梁。 中心悬臂由相关运动振荡器施加的脉冲移动，运动振荡器可以是磁性或电动执行器。
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公开(公告)号：US07259411B1
公开(公告)日：2007-08-21
申请号：US10728132
申请日：2003-12-04
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823885 , H01L21/823487 , H01L29/0653 , H01L29/0657 , H01L29/41741 , H01L29/66666 , H01L29/7827
摘要： A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. The vertical MOS transistor also has an insulation layer that lines the trench, and a conductive gate region that contacts the insulation layer to fill up the trench.
摘要翻译： 垂直MOS晶体管具有垂直堆叠的源极区域，沟道区域和漏极区域以及从漏极区域的顶表面延伸穿过漏极区域，沟道区域并且部分地延伸到源极区域的沟槽 。 垂直MOS晶体管还具有对沟槽进行排列的绝缘层，以及接触绝缘层以填充沟槽的导电栅极区域。
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5.发明授权公开(公告)号：US07119431B1
公开(公告)日：2006-10-10
申请号：US10665897
申请日：2003-09-18
CPC分类号： H01L29/78606 , H01L23/3677 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for a heat sink to dissipate the heat sourced by the encapsulated transistors in a SOI wafer. The apparatus includes a transistor formed in the active silicon layer of the wafer. The active surface is formed over an oxide layer and a bulk silicon layer. A heat sink is formed in the bulk silicon layer and configured to sink heat through the bulk silicon layer, to the back surface of the wafer. After the transistor is fabricated, the heat sink is formed by masking, patterning and etching the back surface of the wafer to form plugs in the bulk silicon layer. The plug extends through the thickness of the bulk layer to the oxide layer. Thereafter, the plug is filled with a thermally conductive material, such as a metal or DAG (thermally conductive paste). During operation, heat from the transistor is dissipated through the heat sink. In various embodiments of the invention, the plug hole is formed using either an anisotropic plasma or wet etch.
摘要翻译： 散热器散热由SOI晶片中的封装晶体管产生的热量的装置和方法。 该装置包括形成在晶片的有源硅层中的晶体管。 活性表面形成在氧化物层和体硅层上。 在体硅层中形成散热器，并且构造成将热量通过体硅层吸收到晶片的背面。 在制造晶体管之后，通过掩模，图案化和蚀刻晶片的背面来形成散热器，以在体硅层中形成插塞。 塞子延伸穿过本体层的厚度到氧化物层。 此后，塞子填充有导热材料，例如金属或DAG（导热浆）。 在运行期间，来自晶体管的热量通过散热器消散。 在本发明的各种实施例中，插塞孔使用各向异性等离子体或湿蚀刻形成。
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6.发明授权公开(公告)号：US06707117B1
公开(公告)日：2004-03-16
申请号：US10285235
申请日：2002-10-31
IPC分类号： H01C2976
CPC分类号： H01L21/28518 , H01L21/76889 , H01L21/76895 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor structure, interconnects between regions of a single device or different devices are achieved by forming metal plugs that span across the regions to be interconnected, wherein the plugs are formed from the metal used in forming a silicide layer on the structure. The metal is masked off in desired areas prior to etching, to leave the metal plugs.
摘要翻译： 在半导体结构中，单个器件或不同器件的区域之间的互连通过形成跨越要互连的区域的金属插塞来实现，其中插塞由在结构上形成硅化物层所用的金属形成。 在蚀刻之前，将金属掩盖在所需区域中，以留下金属塞。
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7.发明授权Method of etching a lateral trench under an extrinsic base and improved bipolar transistor 有权在外部基极和改进的双极晶体管之下蚀刻横向沟槽的方法公开(公告)号：US06964907B1
公开(公告)日：2005-11-15
申请号：US10716276
申请日：2003-11-17
IPC分类号： H01L21/302 , H01L21/306 , H01L21/331 , H01L29/04 , H01L29/08 , H01L29/10 , H01L29/732
CPC分类号： H01L21/30608 , H01L29/045 , H01L29/0649 , H01L29/0821 , H01L29/1004 , H01L29/66272 , H01L29/7322
摘要： In a BJT, the extrinsic base to collector capacitance is reduced by forming a lateral trench between the extrinsic base region and collector. This is typically done by using an anisotropic wet etch process in a direction of a orientation wafer.
摘要翻译： 在BJT中，通过在外部基极区域和集电极之间形成横向沟槽来减小外部基极到集电极电容。 这通常通过使用<100>取向晶片的<110>方向的各向异性湿蚀刻工艺来完成。
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公开(公告)号：US07528012B1
公开(公告)日：2009-05-05
申请号：US11508495
申请日：2006-08-22
IPC分类号： H01L21/00
CPC分类号： H01L29/78606 , H01L23/3677 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for a heat sink to dissipate the heat sourced by the encapsulated transistors in a SOI wafer. The apparatus includes a transistor formed in the active silicon layer of the wafer. The active surface is formed over an oxide layer and a bulk silicon layer. A heat sink is formed in the bulk silicon layer and configured to sink heat through the bulk silicon layer, to the back surface of the wafer. After the transistor is fabricated, the heat sink is formed by masking, patterning and etching the back surface of the wafer to form plugs in the bulk silicon layer. The plug extends through the thickness of the bulk layer to the oxide layer. Thereafter, the plug is filled with a thermally conductive material, such as a metal or DAG (thermally conductive paste). During operation, heat from the transistor is dissipated through the heat sink. In various embodiments of the invention, the plug hole is formed using either an anisotropic plasma or wet etch.
摘要翻译： 散热器散热由SOI晶片中的封装晶体管产生的热量的装置和方法。 该装置包括形成在晶片的有源硅层中的晶体管。 活性表面形成在氧化物层和体硅层上。 在体硅层中形成散热器，并且构造成将热量通过体硅层吸收到晶片的背面。 在制造晶体管之后，通过掩模，图案化和蚀刻晶片的背面来形成散热器，以在体硅层中形成插塞。 塞子延伸穿过本体层的厚度到氧化物层。 此后，塞子填充有导热材料，例如金属或DAG（导热浆）。 在运行期间，来自晶体管的热量通过散热器消散。 在本发明的各种实施例中，插塞孔使用各向异性等离子体或湿蚀刻形成。
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9.发明授权Semiconductor interconnect and method of providing interconnect using a contact region 有权半导体互连和使用接触区提供互连的方法公开(公告)号：US06864582B1
公开(公告)日：2005-03-08
申请号：US10284761
申请日：2002-10-31
IPC分类号： H01L23/485 , H01L29/72
CPC分类号： H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor structure, interconnects between regions of a single device or different devices are achieved by forming contacts or plugs in thick oxide holes that span across the regions to be interconnected.
摘要翻译： 在半导体结构中，单个器件或不同器件的区域之间的互连通过在跨越待互连的区域的厚氧化物孔中形成接触或插塞来实现。
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公开(公告)号：US07435628B1
公开(公告)日：2008-10-14
申请号：US11881671
申请日：2007-07-27
CPC分类号： H01L21/823885 , H01L21/823487 , H01L29/0653 , H01L29/0657 , H01L29/41741 , H01L29/66666 , H01L29/7827
摘要： A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. The vertical MOS transistor also has an insulation layer that lines the trench, and a conductive gate region that contacts the insulation layer to fill up the trench.
摘要翻译： 垂直MOS晶体管具有垂直堆叠的源极区域，沟道区域和漏极区域以及从漏极区域的顶表面延伸穿过漏极区域，沟道区域并且部分地延伸到源极区域的沟槽 。 垂直MOS晶体管还具有对沟槽进行排列的绝缘层，以及接触绝缘层以填充沟槽的导电栅极区域。
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