公开(公告)号：US20130071780A1

公开(公告)日：2013-03-21

申请号：US13697103

申请日：2011-06-22

申请人： Shigetaka Numazawa ,  Katsumi Abe ,  Kiyotaka Ihara ,  Takehiro Nakajima ,  Makoto Koike

发明人： Shigetaka Numazawa ,  Katsumi Abe ,  Kiyotaka Ihara ,  Takehiro Nakajima ,  Makoto Koike

IPC分类号： C07C211/60

CPC分类号： C07C211/60 ,  C07C217/94 ,  C07C2602/08 ,  C07C2602/10 ,  C07C2603/18 ,  G03G5/0542 ,  G03G5/0564 ,  G03G5/0571 ,  G03G5/0614 ,  G03G5/0696 ,  G03G5/14708 ,  G03G5/14756

摘要： [Problems] To provide a novel compound useful as an electric charge transporting agent having a high carrier mobility, and making it possible not only to stably form a photosensitive layer without precipitating crystals or developing pinholes when the photosensitive layer is being formed but also to prepare an organic photosensitive material for electrophotography featuring a high sensitivity and a low residual potential.[Means for Solution] The compound is represented by the following general formula (1); In the general formula (1), R1 to R7 are, for example, alkyl groups, X1 is, for example, —CH═CH—CH═CH2, X2 is, for example, —CH═CH2, and k and l are integers of 0 to 4.

摘要翻译： [问题]提供一种可用作具有高载流子迁移率的电荷输送剂的新型化合物，并且不仅在形成感光层时不仅稳定地形成感光层而不析出晶体或显影针孔，而且可制备 用于电子照相的有机感光材料，具有高灵敏度和低残留电位。 [解决方案]该化合物由以下通式（1）表示： 在通式（1）中，R 1至R 7为例如烷基，X 1为例如-CH = CH-CH = CH 2，X 2为例如-CH = CH 2，且k为l 整数为0〜4。

公开(公告)号：US08274845B2

公开(公告)日：2012-09-25

申请号：US12793062

申请日：2010-06-03

申请人： Katsumi Abe ,  Masahiro Yoshihara ,  Masaru Koyanagi

发明人： Katsumi Abe ,  Masahiro Yoshihara ,  Masaru Koyanagi

IPC分类号： G11C7/00 ,  G11C16/00

CPC分类号： G11C7/1078 ,  G11C7/1084 ,  G11C16/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/028 ,  G11C2207/2254

摘要： A nonvolatile semiconductor memory device is provided, which includes an input buffer provided with a first inverter that can electrically adjust circuit threshold values, a circuit: threshold value monitor provided with a second inverter having the same circuit configuration as the first inverter to detect the circuit threshold values of the first inverter when the input and output of the second inverter are short-circuited, respectively, a memory storing parameter values that correspond to the circuit threshold values detected by the circuit threshold value monitor, and a data-reader circuit reading the parameter values given to the first inverter from the memory.

摘要翻译： 提供了一种非易失性半导体存储器件，其包括：输入缓冲器，其具有能够电调节电路阈值的第一反相器;电路：具有与第一反相器相同电路结构的第二反相器的阈值监视器，用于检测电路 分别在第二反相器的输入和输出短路时第一反相器的阈值，存储与由电路阈值监视器检测的电路阈值对应的参数值的存储器，读取数据读取器电路的数据读取器电路 从存储器给予第一反相器的参数值。

公开(公告)号：US08243055B2

公开(公告)日：2012-08-14

申请号：US12516456

申请日：2007-12-12

申请人： Katsumi Abe

发明人： Katsumi Abe

IPC分类号： G06F3/038

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/061 ,  G09G2320/0233 ,  G09G2320/0261 ,  G09G2320/043

摘要： A light-emitting display device includes multiple pixels, with each pixel including a light-emitting element and a drive circuit for supplying the current to the light-emitting element based on a control voltage supplied from a data line. In a light-emitting period, one end of a capacitor element is connected with a source terminal by a second switch element, and the drive circuit supplies a current to the light-emitting element. In a current setting period prior to the light-emitting period, during which a gate terminal is connected with the source terminal by a first switch element and the one end of the capacitor element is connected with the data line by a third switch element, the source terminal is once connected with a reference voltage line having a voltage higher than a voltage of a drain terminal, and thereafter the source terminal is disconnected from the reference voltage line to render the voltage between the gate terminal and the drain terminal equal to a threshold voltage of a driving transistor.

摘要翻译： 发光显示装置包括多个像素，每个像素包括发光元件和驱动电路，用于根据从数据线提供的控制电压向发光元件提供电流。 在发光期间，电容器元件的一端通过第二开关元件与源极端子连接，驱动电路向发光元件供给电流。 在发光期之前的当前设定期间，栅极端子通过第一开关元件与源极端子连接，并且电容器元件的一端通过第三开关元件与数据线连接， 源端子一旦与电压高于漏极端子的电压的基准电压线连接，此后源极端子与基准电压线断开，使栅极端子和漏极端子之间的电压等于阈值 驱动晶体管的电压。

公开(公告)号：US08228744B2

公开(公告)日：2012-07-24

申请号：US12693798

申请日：2010-01-26

申请人： Masahiro Yoshihara ,  Katsumi Abe

发明人： Masahiro Yoshihara ,  Katsumi Abe

IPC分类号： G11C7/10

CPC分类号： G11C7/12 ,  G11C7/08 ,  G11C2207/005

摘要： A semiconductor memory device includes a memory cell array, a page buffer, a data line pair, a differential amplifier and a precharger. The memory cell array includes a plurality of pages in which a plurality of memory cells are arranged. The page buffer is formed adjacent to the memory cell array, and includes a plurality of sense amplifiers configured to temporarily hold page data read from the memory cells in the page. The data line pair is arranged in the page buffer and is connected to the sense amplifiers. The differential amplifier is configured to amplify a potential difference between lines of the data line pair. The precharger is configured to precharge the data line pair to a predetermined potential. At least one of the differential amplifier and the precharger is formed in the page buffer, and the at least one circuit is electrically connected to the data line pair.

摘要翻译： 半导体存储器件包括存储单元阵列，页缓冲器，数据线对，差分放大器和预充电器。 存储单元阵列包括多个存储单元布置在其中的多个页面。 页面缓冲器形成在与存储单元阵列相邻的位置，并且包括多个读出放大器，被配置为临时保持从页面中的存储器单元读取的页面数据。 数据线对被布置在页缓冲器中并连接到读出放大器。 差分放大器被配置为放大数据线对的线之间的电位差。 预充电器被配置为将数据线对预充电到预定电位。 差分放大器和预充电器中的至少一个形成在页面缓冲器中，并且至少一个电路电连接到数据线对。

公开(公告)号：US20110205806A1

公开(公告)日：2011-08-25

申请号：US12884721

申请日：2010-09-17

申请人： Masahiro Yoshihara ,  Teruo Takagiwa ,  Katsumi Abe

发明人： Masahiro Yoshihara ,  Teruo Takagiwa ,  Katsumi Abe

IPC分类号： G11C16/34

CPC分类号： G11C16/3436

摘要： According to one embodiment, a semiconductor memory device includes memory cells, holding circuits, and a logical gate chain. The memory cells are associated with columns. The holding circuits are associated with the columns and capable of holding first information indicating whether associated one of the columns is a verify-failed column or not. The logical gate chain includes a plurality of first logical gates associated with the columns and connected in series. Each of the first logical gates outputs a logical level to a next-stage first logical gate in a series connection. The logical level indicates whether the verify-failed column exists or not based on the first information in associated one of the holding circuit. The content indicated by the logical level output from each of the first logical gates is inverted using one of the first logical gates associated with the verify-failed column as a border.

摘要翻译： 根据一个实施例，半导体存储器件包括存储单元，保持电路和逻辑门极链。 存储单元与列相关联。 保持电路与列相关联，并且能够保存指示相关联的一个列是否为验证失败列的第一信息。 逻辑门链包括与列相关联并且串联连接的多个第一逻辑门。 第一逻辑门中的每一个在串联连接中将逻辑电平输出到下一级第一逻辑门。 逻辑电平基于保持电路中相关联的一个中的第一信息指示验证失败列是否存在。 使用与验证失败列相关联的第一逻辑门之一作为边界来反转从每个第一逻辑门输出的逻辑电平指示的内容。

公开(公告)号：US07796110B2

公开(公告)日：2010-09-14

申请号：US11801513

申请日：2007-05-10

申请人： Katsumi Abe

发明人： Katsumi Abe

IPC分类号： G09G3/36

CPC分类号： G09G3/3283 ,  G09G3/3241 ,  G09G3/325 ,  G09G2300/0842 ,  G09G2310/0248 ,  G09G2310/027 ,  G09G2310/0297 ,  G09G2320/0233

摘要： In a D/I conversion section of the semiconductor device for driving a light emission display device, a precharge circuit is provided at the rear of each 1-output D/I conversion section. A precharge signal PC is input into the precharge circuit. The D/I conversion section has two output blocks internally thereof, and a role for storing and outputting current is changed every frame to enable securing a period for driving a pixel longer. Further, at the time of driving, in the precharge circuit, current driving is carried out after a voltage corresponding to output current has been applied to the pixel, and therefore, the pixel can be driven at high speed. Thereby, output current of high accuracy can be supplied to digital image data to be input, and even where an output current value is low, the current load device can be driven at high speed.

摘要翻译： 在用于驱动发光显示装置的半导体装置的D / I转换部分中，在每个1输出D / I转换部分的后部设置预充电电路。 预充电信号PC被输入到预充电电路中。 D / I转换部分在其内部具有两个输出块，并且每帧改变存储和输出电流的作用，以使得能够确保用于驱动像素的时间更长。 此外，在驱动时，在预充电电路中，在对应于输出电流的电压施加到像素之后进行电流驱动，因此可以高速驱动像素。 从而，可以将高精度的输出电流提供给要输入的数字图像数据，并且即使在输出电流值低的情况下，可以高速驱动当前的负载装置。

公开(公告)号：US20100001983A1

公开(公告)日：2010-01-07

申请号：US12516456

申请日：2007-12-12

申请人： Katsumi Abe

发明人： Katsumi Abe

IPC分类号： G09G5/00 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/061 ,  G09G2320/0233 ,  G09G2320/0261 ,  G09G2320/043

摘要： A light-emitting display device which suppresses influence of characteristic variations of a driving transistor and characteristic shift caused by electrical stress. The device includes multiple pixels including an organic EL element (OLED) which emits light at a luminance determined based on supplied current and a drive circuit for supplying current to OLED based on a control voltage from a data line. The drive circuit includes a driving transistor (D-TFT) for OLED, a capacitor element, and multiple switch elements. D-TFT has a source terminal connected with an anode terminal of OLED. The capacitor and switch elements operate so that, when current is supplied from the drive circuit to OLED, a voltage difference between gate and source terminals of D-TFT is a sum of threshold voltage of the driving transistor and voltage determined from voltage of a drain terminal of the driving transistor and the control voltage during current setting period.

摘要翻译： 一种抑制驱动晶体管的特性变化和电应力引起的特性偏移的影响的发光显示装置。 该装置包括多个像素，其包括以基于所提供的电流确定的亮度发光的有机EL元件（OLED）和用于基于来自数据线的控制电压向OLED提供电流的驱动电路。 驱动电路包括用于OLED的驱动晶体管（D-TFT），电容器元件和多个开关元件。 D-TFT具有与OLED的阳极端子连接的源极端子。 电容器和开关元件工作，使得当电流从驱动电路提供给OLED时，D-TFT的栅极和源极端子之间的电压差是驱动晶体管的阈值电压和从漏极的电压确定的电压之和 端子和电流设定期间的控制电压。

公开(公告)号：US20090011349A1

公开(公告)日：2009-01-08

申请号：US12161896

申请日：2007-01-18

申请人： Katsumi Abe ,  Makoto Koike ,  Atsushi Takesue

发明人： Katsumi Abe ,  Makoto Koike ,  Atsushi Takesue

IPC分类号： G03G15/02 ,  G03G5/047

CPC分类号： G03G5/0696 ,  G03G5/0614 ,  G03G5/0616 ,  G03G5/0638 ,  G03G5/064 ,  G03G5/0644

摘要： An object of the invention is to provide a photoreceptor for electrophotography which has a low residual potential in an initial stage, is inhibited from increasing in residual potential, is prevented from decreasing in charge potential, undergoes little fatigue deterioration even upon repeated use, and is less apt to pose a problem concerning toxicity or environmental pollution. The invention relates to a photoreceptor for electrophotography which has a photosensitive layer containing an aromatic hydroxycarboxylic acid metal complex represented by the following general formula (1): and one or more charge-transporting agents each having an arylaminophenyl group in the molecule.

摘要翻译： 本发明的目的在于提供一种初始阶段具有低剩余电位，抑制残留电位增加的电子照相感光体，防止电荷电位降低，即使重复使用也几乎不会发生疲劳劣化，并且是 不太容易造成毒性或环境污染的问题。 本发明涉及一种电子照相用感光体，其具有含有下述通式（1）表示的芳香族羟基羧酸金属络合物的感光层和分子内各具有芳基氨基苯基的一种或多种电荷输送剂。

公开(公告)号：US20080285324A1

公开(公告)日：2008-11-20

申请号：US11834932

申请日：2007-08-07

申请人： Yukako HATTORI ,  Katsumi Abe ,  Masami Masuda ,  Hiroshi Nakamura

发明人： Yukako HATTORI ,  Katsumi Abe ,  Masami Masuda ,  Hiroshi Nakamura

IPC分类号： G11C5/02

CPC分类号： H01L27/105 ,  G11C7/1042 ,  G11C7/18 ,  H01L27/0207 ,  H01L27/11898

摘要： Shunt regions are formed at certain intervals in a memory cell array region as extending in a second direction. The shunt regions each include a contact formed to connect a word line or a signal line wired in the same direction to another metal wire. Extension regions are each formed of an extension of the shunt region in the data cache array region. Data input/output lines extend in a first direction and transfer data on bit lines simultaneously via a data cache array. Sense circuits are arranged around the data cache array and connected to the data input/output lines respectively. The data input/output lines are divided at a certain interval in the first direction. The divided portions are connected to respective leads formed in the extension region in the longitudinal direction thereof and connected to the sense circuits via the leads.

摘要翻译： 分流区域以沿第二方向延伸的存储单元阵列区域中的特定间隔形成。 并联区域各自包括形成为将字线或者以相同方向布线的信号线连接到另一金属线的触点。 延伸区域各自由数据高速缓存阵列区域中的分流区域的扩展形成。 数据输入/输出线在第一方向上延伸，并通过数据高速缓存阵列同时传送位线上的数据。 检测电路被布置在数据高速缓存阵列的周围，分别连接到数据输入/输出线。 数据输入/输出线在第一个方向上以一定间隔分开。 分开的部分连接到在其延伸区域中形成在其纵向方向上的各个引线，并且经由引线连接到感测电路。

公开(公告)号：US07312977B2

公开(公告)日：2007-12-25

申请号：US10529128

申请日：2003-09-29

申请人： Atsushi Yamada ,  Katsumi Abe ,  Toshiyuki Murakami ,  Takashi Arai ,  Yuuya Tamai ,  Tomohiro Matsuzaki

发明人： Atsushi Yamada ,  Katsumi Abe ,  Toshiyuki Murakami ,  Takashi Arai ,  Yuuya Tamai ,  Tomohiro Matsuzaki

IPC分类号： H01G9/00

CPC分类号： H01G9/0036 ,  H01G9/025 ,  H01G11/52 ,  H01G11/56 ,  Y02E60/13 ,  Y10T29/41 ,  Y10T29/417

摘要： An anode foil and a cathode foil which has an oxidation film layer on the surface are separated by a separator and wound to form a capacitor element and then anodic forming is performed on this capacitor element. Next, the capacitor element is immersed in a solution of less than 10 wt %, preferably between 2.0 and 9 wt %, more preferably between 5 and 8 wt % of polyimide silicone dissolved in a ketone solvent, and after removing, the solvent is evaporated off at between 40 and 100° C. and heat treating is performed at 150 to 200° C. Next, this capacitor element was immersed in a mixture of polymeric monomer and oxidizing agent and the conductive monomer was made to polymerize in the capacitor element to form a solid electrolyte layer. Furthermore, this capacitor element was stored in an external case and the open end was sealed with sealing rubber to form the solid electrolytic capacitor.

摘要翻译： 在表面上具有氧化膜层的阳极箔和阴极箔被分离器分离并卷绕形成电容器元件，然后在该电容器元件上进行阳极形成。 接下来，将电容器元件浸入溶解在酮溶剂中的聚酰亚胺硅酮的10重量％以下，优选为2.0重量％〜9重量％，更优选为5〜8重量％的溶液，除去后，溶剂蒸发 在150〜200℃下进行热处理。接下来，将电容器元件浸渍在聚合物单体和氧化剂的混合物中，使导电性单体在电容器元件中聚合成 形成固体电解质层。 此外，将该电容器元件储存在外部壳体中，并且用密封橡胶密封开口端以形成固体电解电容器。