公开(公告)号：US20150325686A1

公开(公告)日：2015-11-12

申请号：US14272660

申请日：2014-05-08

Applicant: SOITEC ,  STMICROELECTRONICS, INC.

Inventor： Frédéric Allibert ,  Pierre Morin

IPC: H01L29/66 ,  H01L29/205 ,  H01L21/8238 ,  H01L21/02

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/02614 ,  H01L21/02694 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/205

Abstract: Methods of fabricating semiconductor structures involve the formation of fins for finFET transistors having different stress/strain states. Fins of one stress/strain state may be employed to form n-type finFETS, while fins of another stress/strain state may be employed to form p-type finFETs. The fins having different stress/strain states may be fabricated from a common layer of semiconductor material. Semiconductor structures and devices are fabricated using such methods.

Abstract translation: 制造半导体结构的方法涉及形成具有不同应力/应变状态的finFET晶体管的翅片。 可以使用一个应力/应变状态的芯来形成n型finFET，而可以采用另一个应力/应变状态的翅片来形成p型finFET。 具有不同应力/应变状态的翅片可以由公共半导体材料层制造。 使用这种方法制造半导体结构和器件。

公开(公告)号：US20150249153A1

公开(公告)日：2015-09-03

申请号：US14194215

申请日：2014-02-28

Applicant: STMicroelectronics, Inc.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L27/10879 ,  H01L21/2251 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4236 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7855 ,  H01L29/78603 ,  H01L29/78654

Abstract: Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a substrate. An upper portion of sidewalls at the localized region may be covered with a covering layer, and a lower portion of the sidewalls at the localized region may not be covered. A converting material may be formed in contact with the lower portion of the localized region, and the substrate heated. The heating may introduce a chemical species from the converting material into the lower portion, which creates stress in the localized region. The methods may be used to form strained-channel finFETs.

Abstract translation: 描述了形成基底的局部应变区域的方法和结构。 可以在衬底的局部区域的边界处形成沟槽。 局部区域的侧壁的上部可以被覆盖层覆盖，并且局部区域的侧壁的下部可能不被覆盖。 可以将转换材料形成为与局部区域的下部接触，并且加热衬底。 加热可以将化学物质从转化材料引入下部，这在局部区域中产生应力。 这些方法可以用于形成应变通道的finFET。

公开(公告)号：US08952420B1

公开(公告)日：2015-02-10

申请号：US13953551

申请日：2013-07-29

Applicant: STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Pierre Morin

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

Abstract translation: 描述形成应变通道鳍状FET的方法和结构。 用于finFET的鳍结构可以形成在生长在块状衬底上的两个外延层中。 可以将第一薄外延层切割并用于通过弹性弛豫向finFET的相邻沟道区施加应变。 该结构表现出优选的设计范围，用于增加应变在翅片高度上的诱导应变和均匀性。