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公开(公告)号：US20110303998A1
公开(公告)日：2011-12-15
申请号：US13213026
申请日：2011-08-18
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/5607
摘要： A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.
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92.发明申请METHOD & APPARATUS FOR MULTI-STAGE SPUTTER DEPOSITION OF UNIFORM THICKNESS LAYERS 有权均匀厚度层的多阶段溅射沉积方法与装置公开(公告)号：US20110223445A1
公开(公告)日：2011-09-15
申请号：US12882053
申请日：2010-09-14
IPC分类号： G11B5/667
CPC分类号： G11B5/851 , C23C14/165 , C23C14/185 , C23C14/205 , C23C14/352 , C23C14/568
摘要： A method of forming a uniform thickness layer of a selected material on a surface of a substrate comprises steps of: (a) providing a multi-stage cathode sputtering apparatus comprising a group of spaced-apart cathode/target assemblies and a means for transporting at least one substrate/workpiece past each cathode/target assembly, each cathode/target assembly comprising a sputtering surface oriented substantially parallel to the first surface of the substrate during transport past the group of cathode/target assemblies, the group of cathode/target assemblies adapted for providing different angular sputtered film thickness profiles; and (b) transporting the substrate past each cathode/target assembly while providing different sputtered film thickness profiles from at least some of the cathode/target assemblies, such that a plurality of sub-layers is deposited on the surface of the substrate/workpiece which collectively form a uniform thickness layer of the selected material.
摘要翻译： 在衬底的表面上形成选定材料的均匀厚度层的方法包括以下步骤：（a）提供多级阴极溅射装置，其包括一组间隔开的阴极/靶组件和用于在 每个阴极/目标组件包括溅射表面，每个阴极/靶组件包括溅射表面，该溅射表面在输送通过阴极/靶组件组之前基本上平行于衬底的第一表面定向，该阴极/靶组件适于 用于提供不同的角溅射膜厚度轮廓; 并且（b）将衬底传送通过每个阴极/靶组件，同时从至少一些阴极/靶组件提供不同的溅射膜厚度分布，使得多个子层沉积在衬底/工件的表面上， 共同形成所选材料的均匀厚度层。
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公开(公告)号：US20080246104A1
公开(公告)日：2008-10-09
申请号：US11866830
申请日：2007-10-03
IPC分类号： H01L29/82
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
摘要： One embodiment of the present invention includes multi-state current-switching magnetic memory element including a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.
摘要翻译： 本发明的一个实施例包括多状态电流切换磁存储元件，其包括两个或多个磁隧道结（MTJ）的堆叠，每个MTJ具有自由层，并且通过形成的晶种层与堆叠中的其它MTJ分离 在隔离层上，用于存储多于一位的信息的堆栈，其中施加到存储器元件的不同电平的电流导致切换到不同的状态。
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公开(公告)号：US20080191295A1
公开(公告)日：2008-08-14
申请号：US11776692
申请日：2007-07-12
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： One embodiment of the present invention includes a non-volatile magnetic memory element including layers any of which are graded.
摘要翻译： 本发明的一个实施例包括非易失性磁存储元件，其包括任何等级的层。
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公开(公告)号：US20080094886A1
公开(公告)日：2008-04-24
申请号：US11674124
申请日：2007-02-12
IPC分类号： G11C11/14 , H01L21/8239
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： One embodiment of the present invention includes a non-uniform switching based non-volatile magnetic memory element including a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer, wherein switching current is applied, in a direction that is substantially perpendicular to the fixed, barrier, first free, non-uniform and the second free layers causing switching between states of the first, second free and non-uniform layers with substantially reduced switching current.
摘要翻译： 本发明的一个实施例包括：非均匀的基于开关的非易失性磁存储元件，其包括固定层，形成在固定层顶部的阻挡层，形成在阻挡层顶部上的第一自由层， 形成在第一自由层的顶部上的均匀开关层（NSL）和形成在非均匀开关层顶部的第二自由层，其中施加开关电流，其基本上垂直于固定屏障的方向， 第一自由，不均匀和第二自由层引起第一，第二自由和非均匀层的状态之间的切换，其开关电流大大降低。
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公开(公告)号：US20070201265A1
公开(公告)日：2007-08-30
申请号：US11678515
申请日：2007-02-23
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , B82Y10/00 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/5607 , G11C2211/5615 , H01L27/222 , H01L27/228 , H01L43/08
摘要： One embodiment of the present invention includes a multi-state current-switching magnetic memory element having a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
摘要翻译： 本发明的一个实施例包括具有由用于存储多于一位的信息的非磁性层分隔的磁隧道结（MTJ）堆叠的多状态电流切换磁存储元件，其中施加到 存储器元件导致切换到不同的状态。
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公开(公告)号：US06777066B1
公开(公告)日：2004-08-17
申请号：US09986063
申请日：2001-11-07
IPC分类号： G11B5667
摘要： A low noise, high areal recording density, perpendicular magnetic recording medium comprises: (a) a non-magnetic substrate having a surface; and (b) a layer stack formed over the substrate surface, the layer stack comprising, in overlying sequence from the substrate surface: (i) a magnetically soft underlayer; (ii) at least one non-magnetic interlayer; and (iii) a CoCr-based, magnetically hard perpendicular recording layer; wherein the compositions of the at least one non-magnetic interlayer and the CoCr-based, magnetically hard perpendicular recording layer are selected to provide the medium with a negative nucleation field Hn, remanent squareness of about 1, and high coercivity of at least about 5,000 Oe. A method for manufacturing the medium by means of DC magnetron sputtering of layers (i)-(iii) is also disclosed.
摘要翻译： 低噪声，高面积记录密度，垂直磁记录介质包括：（a）具有表面的非磁性基底; 以及（b）形成在所述衬底表面上的层叠层，所述层堆叠以从衬底表面的顺序包括：（i）软磁性底层;（ii）至少一个非磁性中间层; 和（iii）基于CoCr的磁性硬的垂直记录层;其中选择所述至少一个非磁性中间层和所述CoCr基磁性硬垂直记录层的组成以向所述介质提供负成核场Hn ，约1的残余矩形度和至少约5,000Oe的高矫顽力。还公开了通过层（i） - （iii）的DC磁控溅射制造介质的方法。
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公开(公告)号：US06692619B1
公开(公告)日：2004-02-17
申请号：US10067833
申请日：2002-02-08
IPC分类号： C23C1434
CPC分类号： H01J37/3429 , C23C14/14 , C23C14/3407 , G11B5/8404 , H01J37/3405
摘要： A high-saturation magnetization composite soft magnetic film can be deposited by magnetron co-sputtering of two or more kinds of materials using targets which have a lower saturation magnetization than that of a single target, which otherwise will be used to produce the resulting composite soft magnetic film. The composite film has a substantially uniform composition and thickness.
摘要翻译： 可以通过使用具有比单个靶的饱和磁化强度更低的目标的两种或更多种材料的磁控管共溅射来沉积高饱和磁化复合软磁膜，否则将用于产生所得到的复合软 磁性膜。 复合膜具有基本均匀的组成和厚度。
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99.发明授权
公开(公告)号：US6146754A
公开(公告)日：2000-11-14
申请号：US145762
申请日：1998-09-02
申请人： Xing Song , Qixu Chen , Charles Leu , Rajiv Yadav Ranjan
发明人： Xing Song , Qixu Chen , Charles Leu , Rajiv Yadav Ranjan
CPC分类号： G11B5/732 , G11B5/8404 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A high areal density magnetic recording medium exhibiting high Hc, high SNR, high S* and substantially isotropic magnetic properties is achieved by depositing a thin seedlayer before depositing the underlayer. Embodiments include heating the seedlayer under vacuum in the presence of residual oxygen to induce appropriate crystalline orientation and surface morphology for nucleation and growth of the underlayer and magnetic layer having substantially isotropic magnetic properties.
摘要翻译： 通过在沉积底层之前沉积薄的种子层，实现了表现出高Hc，高SNR，高S *和基本上各向同性磁性的高密度磁记录介质。 实施方案包括在存在残余氧的情况下在真空下加热种子层，以诱导适当的晶体取向和表面形态，用于具有基本上各向同性磁性的底层和磁性层的成核和生长。
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100.发明授权
公开(公告)号：US5908514A
公开(公告)日：1999-06-01
申请号：US740211
申请日：1996-10-24
CPC分类号： G11B5/656 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12861 , Y10T428/31678
摘要： A new magnetic alloy exhibits high Hc and Ms while exhibiting excellent corrosion resistance, thereby providing ideal physical properties for high density recording applications. Other parameters of the media, such as SNR, PW50, and S are at least maintained, if not also improved. The alloy contains cobalt and up to 10 at. % Ni, up to 20 at. % Pt, up to 10 at. % Ta, up to 10 at. % Ti, and optionally up to 6 at. % B. The ratio of the tantalum to titanium in the alloy is between 3:1 and 1:3. The alloy is deposited by vacuum deposition (typically sputtering) on a similarly deposited non-magnetic alloy under layer. Nitrogen and/or oxygen may be introduced into the alloy during deposition to improve SNR. Other corrosion-resistant thin film alloys may also be obtained by the inclusion of Ta and Ti.
摘要翻译： 新的磁性合金表现出高Hc和Ms，同时具有优异的耐腐蚀性，从而为高密度记录应用提供了理想的物理性能。 至少保持介质的其他参数，如SNR，PW50和S，如果不能改善。 该合金含有钴，最多可达10英寸。 ％Ni，最多20盎司。 ％Pt，最多10个。 ％Ta，高达10 at。 ％Ti，任选至多6at。 ％B。合金中钽与钛的比例为3：1至1：3。 该合金通过真空沉积（通常是溅射）沉积在类似地沉积的非磁性合金层下。 可以在沉积期间将氮和/或氧引入合金以提高SNR。 也可以通过包含Ta和Ti来获得其它耐腐蚀的薄膜合金。
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