公开(公告)号：US08310791B2

公开(公告)日：2012-11-13

申请号：US12382309

申请日：2009-03-13

申请人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.

摘要翻译： 磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。 因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

公开(公告)号：US08264920B1

公开(公告)日：2012-09-11

申请号：US13191913

申请日：2011-07-27

申请人： Tsutomu Chou ,  Eiji Komura ,  Shinji Hara ,  Daisuke Miyauchi ,  Kosuke Tanaka

发明人： Tsutomu Chou ,  Eiji Komura ,  Shinji Hara ,  Daisuke Miyauchi ,  Kosuke Tanaka

IPC分类号： G11B11/00 ,  G11B7/135

CPC分类号： G11B5/314 ,  B82Y20/00 ,  G02B6/1226 ,  G11B5/3116 ,  G11B5/6088 ,  G11B2005/0021

摘要： A near-field light generator includes a waveguide, a plasmon generator, and a metal layer. The waveguide includes a core having an evanescent light generating surface. The plasmon generator includes a base part, and a protruding part that protrudes from the base part toward the evanescent light generating surface. The protruding part has: a front end face located at an end in a direction parallel to the evanescent light generating surface; a band-shaped flat surface facing toward the evanescent light generating surface; and two side surfaces connected to the flat surface. In at least a portion of the protruding part, the distance between the two side surfaces increases with increasing distance from the evanescent light generating surface. The flat surface includes a first portion contiguous with the front end face, and a second portion that is located farther from the front end face than is the first portion. The metal layer has an end face facing the first portion. The evanescent light generating surface faces the second portion.

摘要翻译： 近场光发生器包括波导管，等离子体激元发生器和金属层。 波导包括具有ev逝光产生表面的芯。 等离子体发生器包括基部和从基部朝向渐逝光产生表面突出的突出部分。 所述突出部具有：前端面，其位于与所述ev逝光生成面平行的方向的端部; 面向渐逝光产生表面的带状平坦表面; 以及连接到平坦表面的两个侧表面。 在突出部分的至少一部分中，两个侧表面之间的距离随着与渐消光产生表面的距离的增加而增加。 平坦表面包括与前端面相邻的第一部分，以及比第一部分更远离前端面的第二部分。 金属层具有面向第一部分的端面。 渐逝光产生表面面向第二部分。

公开(公告)号：US08240025B2

公开(公告)日：2012-08-14

申请号：US12888916

申请日：2010-09-23

申请人： Koji Shimazawa ,  Seiichi Takayama ,  Nobuyuki Mori ,  Yoshihiro Tsuchiya ,  Shinji Hara

发明人： Koji Shimazawa ,  Seiichi Takayama ,  Nobuyuki Mori ,  Yoshihiro Tsuchiya ,  Shinji Hara

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/105 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/53165 ,  Y10T29/53265 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/1193

摘要： Provided is a method and apparatus to manufacture a thermally-assisted magnetic recording head in which a light source unit including a light source and a slider including an optical system are joined. The method comprises steps of: adhering by suction the light source unit with a back holding jig; bringing the light into contact with a slider back surface; applying a load to a load application surface of the light source unit by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; positioning the light source unit apart from the slider, and then aligning the light source with the optical system; bringing again the light source unit into contact with the slider; and applying a load again to the load application surface.

摘要翻译： 提供了一种制造热辅助磁记录头的方法和装置，其中包括光源的光源单元和包括光学系统的滑块相连接。 该方法包括以下步骤：用后保持夹具吸附光源单元; 使光与滑块背面接触; 通过加载装置将负载施加到光源单元的负载施加表面，以使光源单元的接合表面与滑块背面一致; 将光源单元与滑块分开，然后将光源与光学系统对准; 使光源单元再次与滑块接触; 并将负载再次施加到负载施加表面。

公开(公告)号：US08194363B2

公开(公告)日：2012-06-05

申请号：US12379624

申请日：2009-02-26

申请人： Shinji Hara ,  Yoshihiro Tsuchiya

发明人： Shinji Hara ,  Yoshihiro Tsuchiya

IPC分类号： G11B21/24

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996

摘要： A thin film magnetic head includes a first through fourth free layers, a spacer layer, and a bias magnetic field application layer. The first and second free layers are magnetized in opposite directions of each other in the orthogonal direction to the ABS when the bias magnetic field is applied to the first and second free layers, and are exchange-coupled such that an angle between the magnetization direction of the bias magnetic field and the first free layer is acute and such that an angle between the magnetization direction of the bias magnetic field and the second free layer is acute. Similarly, the third and fourth layers have the same configuration.

摘要翻译： 薄膜磁头包括第一至第四自由层，间隔层和偏置磁场施加层。 当偏置磁场施加到第一和第二自由层时，第一自由层和第二自由层在与ABS的正交方向彼此相反的方向上被磁化，并且被交换耦合，使得磁化方向 偏置磁场和第一自由层是锐角的，使得偏置磁场的磁化方向与第二自由层之间的角度是锐角的。 类似地，第三层和第四层具有相同的构造。

公开(公告)号：US08154828B2

公开(公告)日：2012-04-10

申请号：US12500835

申请日：2009-07-10

申请人： Yoshihiro Tsuchiya ,  Shinji Hara ,  Kiyoshi Noguchi ,  Migaku Takahashi ,  Masakiyo Tsunoda

发明人： Yoshihiro Tsuchiya ,  Shinji Hara ,  Kiyoshi Noguchi ,  Migaku Takahashi ,  Masakiyo Tsunoda

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.

摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。 自由层位于磁性固定层的下方。 自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。 因此，在MR元件的面积电阻率（AR）例如低于0.3

公开(公告)号：US08125857B2

公开(公告)日：2012-02-28

申请号：US12728600

申请日：2010-03-22

申请人： Kosuke Tanaka ,  Daisuke Miyauchi ,  Susumu Aoki ,  Tetsuya Roppongi ,  Tsutomu Chou ,  Shinji Hara ,  Eiji Komura

发明人： Kosuke Tanaka ,  Daisuke Miyauchi ,  Susumu Aoki ,  Tetsuya Roppongi ,  Tsutomu Chou ,  Shinji Hara ,  Eiji Komura

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/001 ,  G11B2005/0021

摘要： A plasmon generator has an outer surface including a propagation edge, and has a near-field light generating part lying at an end of the propagation edge and located in a medium facing surface. The propagation edge faces an evanescent light generating surface of a waveguide's core with a predetermined distance therebetween and extends in a direction perpendicular to the medium facing surface. The propagation edge is arc-shaped in a cross section parallel to the medium facing surface. The plasmon generator includes a shape changing portion in which a radius of curvature of the propagation edge in the cross section parallel to the medium facing surface continuously decreases with decreasing distance to the medium facing surface.

摘要翻译： 等离子体发生器具有包括传播边缘的外表面，并且具有位于传播边缘的末端并位于面向介质的表面中的近场光产生部分。 传播边缘面向波导芯的ev逝光产生表面，其间具有预定距离，并且在垂直于介质面向表面的方向上延伸。 传播边缘在平行于面向介质的表面的横截面中是弧形的。 等离子体发生器包括形状改变部分，其中平面于介质面向表面的横截面中的传播边缘的曲率半径随着到面向介质的表面的距离的减小而连续地减小。

公开(公告)号：US08031444B2

公开(公告)日：2011-10-04

申请号：US12255105

申请日：2008-10-21

申请人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

发明人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/10

摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.

摘要翻译： 在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有至少一种选自以下的金属元素的掺杂剂： 的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

公开(公告)号：US20110216634A1

公开(公告)日：2011-09-08

申请号：US12719496

申请日：2010-03-08

申请人： Tsutomu Chou ,  Eiji Komura ,  Koji Shimazawa ,  Shinji Hara

发明人： Tsutomu Chou ,  Eiji Komura ,  Koji Shimazawa ,  Shinji Hara

IPC分类号： G11B11/00 ,  G11B5/02

CPC分类号： G11B11/00 ,  G11B5/02

摘要： A plasmon generator has a near-field light generating part located in a medium facing surface. The plasmon generator has an outer surface including a plasmon exciting surface and a plasmon propagating surface that face toward opposite directions. The plasmon exciting surface is substantially in contact with an evanescent light generating surface of a waveguide's core. The plasmon propagating surface is in contact with a dielectric layer that has a refractive index lower than that of the core. The plasmon exciting surface includes a first width changing portion. The plasmon propagating surface includes a second width changing portion. Each of the first and second width changing portions has a width that decreases with decreasing distance to the medium facing surface, the width being in a direction parallel to the medium facing surface and the evanescent light generating surface.

摘要翻译： 等离子体发生器具有位于介质面对表面中的近场光产生部分。 等离子体发生器具有外表面，其包括面向相反方向的等离子体激元表面和等离子体激元传播表面。 等离子体激元表面基本上与波导芯的瞬逝光产生表面接触。 等离子体激元传播表面与折射率低于芯的折射率的电介质层接触。 等离子体激元表面包括第一宽度改变部分。 等离子体激元传播表面包括第二宽度改变部分。 第一和第二宽度改变部分中的每一个具有随着到介质面对表面的距离的减小而减小的宽度，宽度在平行于介质面向表面和渐逝光产生表面的方向上。

公开(公告)号：US08009392B2

公开(公告)日：2011-08-30

申请号：US12318924

申请日：2009-01-13

申请人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/33 ,  G11B5/48 ,  G11B5/60

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.

摘要翻译： 薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。 绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内 为0.8〜1.3。 通过该结构，噪声的发生率降低。

公开(公告)号：US07944650B2

公开(公告)日：2011-05-17

申请号：US11898335

申请日：2007-09-11

申请人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。 磁阻元件还包括接触间隔层的周边的层状膜。 间隔层包括使用氧化物半导体作为材料形成的半导体层。 层叠膜包括依次堆叠的第一层，第二层和第三层。 第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。 第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。 第三层是绝缘层。