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91.发明授权Composition for forming a silicon-containing resist underlayer film and patterning process using the same 有权用于形成含硅抗蚀剂下层膜的组合物和使用其的图案化工艺公开(公告)号：US08932953B2
公开(公告)日：2015-01-13
申请号：US13570403
申请日：2012-08-09
IPC分类号： C08K5/5419 , C08L43/04
摘要： A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). R11m11R12m12R13m13Si(OR14)(4−m11−m12−m13) (2) Si(OR15)4 (3)
摘要翻译： 一种用于形成含硅抗蚀剂下层膜的组合物，其含有：包含至少一种或多种选自下列通式（1-1a）和（ 1-1b），并且能够产生酚羟基，聚合物的水解产物和聚合物的水解 - 缩合物，以及通过混合物的水解缩合获得的作为含硅化合物的组分（B） 含有至少一种或多种由以下通式（2）表示的可水解硅化合物和由以下通式（3）表示的一种或多种可水解硅化合物。 R11m11R12m12R13m13Si（OR14）（4-m11-m12-m13）（2）Si（OR15）4（3）
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92.发明授权Patterning process and composition for forming silicon-containing film usable therefor 有权用于形成可用于其的含硅膜的图案化方法和组合物公开(公告)号：US08835102B2
公开(公告)日：2014-09-16
申请号：US13416842
申请日：2012-03-09
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
CPC分类号： G03F7/0757 , C08L83/04 , C08L83/14 , C09D183/04 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/325 , C08G77/04
摘要： The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.
摘要翻译： 本发明提供一种用于通过光刻形成负型图案的图案化工艺，其至少包括以下步骤：使用含有特定含硅化合物（A）和有机溶剂（B）的含硅膜形成用组合物以形成 含硅膜; 使用无硅抗蚀剂组合物在含硅膜上形成光致抗蚀剂膜; 热处理光致抗蚀剂膜，然后将光致抗蚀剂膜暴露于高能量束; 并使用包含有机溶剂的显影剂来溶解光致抗蚀剂膜的未曝光区域，由此获得负图案。 可以存在作为通过采用有机溶剂型显影形成的负型抗蚀剂的图案化工艺的最佳方案，以及用于形成所述工艺中使用的含硅膜的组合物。
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93.发明授权公开(公告)号：US08652750B2
公开(公告)日：2014-02-18
申请号：US12163795
申请日：2008-06-27
申请人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
发明人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
CPC分类号： C08L83/04 , C09D183/04 , G03F7/091
摘要： A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.
摘要翻译： 由含有（A）通过水解性硅化合物在酸性催化剂的存在下水解缩合得到的含硅化合物，（B）Li的氢氧化物或有机酸盐的热固性组合物形成含硅膜， Na，K，Rb或Ce，或锍，碘鎓或铵化合物，（C）有机酸，（D）环醚取代醇和（E）有机溶剂。 含硅膜确保有效的图案形成，光致抗蚀剂图案的有效转印以及基板的精确加工。
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94.发明授权Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film 有权形成抗蚀剂下层膜的方法，使用该方法的图案化方法以及抗蚀剂下层膜的组合物公开(公告)号：US08450048B2
公开(公告)日：2013-05-28
申请号：US12585387
申请日：2009-09-14
申请人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
发明人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
摘要： There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.
摘要翻译： 公开了一种形成多层抗蚀剂膜的抗蚀剂下层膜的方法，所述多层抗蚀剂膜具有至少三层，其至少包括： 涂布含有下述通式（1）表示的酚醛清漆树脂的抗蚀剂下层膜用组合物的工序，所述酚醛清漆树脂通过在基材上处理具有双萘酚基的化合物而得到; 以及通过在高于300℃和600℃或更低的温度下热处理10至600秒来固化抗蚀剂下层膜的涂覆组合物的步骤。 可以提供一种形成抗蚀剂下层膜的方法，并且使用在具有至少三层的平版印刷用的多层抗蚀剂膜中形成抗蚀剂下层膜的方法的图案化工艺，得到具有降低的反射率的抗蚀剂下层膜 ，耐腐蚀性高，耐热和耐溶剂性高，特别是在基板蚀刻期间无晃动。
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公开(公告)号：US20130108957A1
公开(公告)日：2013-05-02
申请号：US13604270
申请日：2012-09-05
申请人： Motoaki Iwabuchi , Tsutomu Ogihara
发明人： Motoaki Iwabuchi , Tsutomu Ogihara
CPC分类号： G03F7/004 , B01D37/025 , G03F7/075 , G03F7/16
摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，将胶态溶胶从 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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96.发明授权公开(公告)号：US07910283B2
公开(公告)日：2011-03-22
申请号：US11595941
申请日：2006-11-13
CPC分类号： C08G77/48 , C09D183/14 , G03F7/091
摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.
摘要翻译： 用于形成抗光反射涂层的组合物，其用于使用高达200nm的曝光的光刻工艺，包括通过具有下式的含硅 - 硅键的硅烷化合物水解缩合获得的含硅聚合物：R（6-m） Si2Xm，其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得 可以高精度地处理基板。
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97.发明授权公开(公告)号：US07875417B2
公开(公告)日：2011-01-25
申请号：US12163350
申请日：2008-06-27
申请人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
发明人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
CPC分类号： C08L83/04 , C09D183/04 , G03F7/0752 , G03F7/11
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (A-2) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of a base catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.
摘要翻译： 由含有（A-1）通过水解性硅化合物在酸催化剂的存在下水解缩合获得的含硅化合物（A-2）含硅化合物（A-2）的热固性组合物形成含硅膜， （B）Li，Na，K，Rb或Ce的氢氧化物或有机酸盐或锍，碘鎓盐或铵化合物的存在下，通过水解性硅化合物的水解缩合获得，（C） 有机酸，（D）环醚取代的醇，和（E）有机溶剂。 含硅膜确保有效的图案形成，光致抗蚀剂图案的有效转印以及基板的精确加工。
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98.发明授权Substrate comprising a lower silicone resin film and an upper silicone resin film 有权底物包含下部有机硅树脂膜和上部有机硅树脂膜公开(公告)号：US07868407B2
公开(公告)日：2011-01-11
申请号：US11598749
申请日：2006-11-14
申请人： Tsutomu Ogihara , Takafumi Ueda
发明人： Tsutomu Ogihara , Takafumi Ueda
IPC分类号： H01L33/44
CPC分类号： G03F7/091 , G03F7/0752
摘要： There is disclosed a substrate comprising at least an organic film, an antireflection silicone resin film over the organic film, and a photoresist film over the antireflection silicone resin film, wherein the antireflection silicone resin film includes a lower silicone resin film and an upper silicone resin film which has lower silicon content than the lower silicone resin film. There can be provided a substrate comprising at least an organic film, an antireflection silicone resin film over the organic film, and a photoresist film over the antireflection silicone resin film, in which the antireflection silicone resin film has both excellent resist compatibility and high etching resistance at the time of etching the organic film, whereby a pattern can be formed with higher precision.
摘要翻译： 公开了在有机膜上至少含有有机膜，防反射硅树脂膜和防反射硅树脂膜上的光致抗蚀剂膜的基板，其中，防反射硅树脂膜包括下部有机硅树脂膜和上部有机硅树脂 具有比下部有机硅树脂膜低的硅含量的膜。 可以提供一种在有机膜上至少含有有机膜，防反射硅酮树脂膜和防反射硅树脂膜上的光致抗蚀剂膜的基材，其中抗反射硅树脂膜具有优异的抗蚀剂相容性和高抗蚀性 在蚀刻有机膜时，可以以更高的精度形成图案。
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99.发明授权公开(公告)号：US07678529B2
公开(公告)日：2010-03-16
申请号：US11594176
申请日：2006-11-08
CPC分类号： G03F7/0752 , G03F7/0757 , G03F7/094 , G03F7/11 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.
摘要翻译： 多层抗蚀剂工艺包括在可图案化衬底上依次形成底涂层，中间膜和光致抗蚀剂膜，并且在多个阶段中进行蚀刻。 含硅的成膜组合物可用于形成用作蚀刻掩模的中间膜，其包含通过至少一种含Si-Si键的硅烷化合物的水解缩合而得到的含硅聚合物，其具有下式：R（6-m ）Si 2 X m其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高蚀刻选择性。
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100.发明申请公开(公告)号：US20090011372A1
公开(公告)日：2009-01-08
申请号：US12163795
申请日：2008-06-27
申请人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
发明人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
CPC分类号： C08L83/04 , C09D183/04 , G03F7/091
摘要： A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.
摘要翻译： 由含有（A）通过水解性硅化合物在酸性催化剂的存在下水解缩合得到的含硅化合物，（B）Li的氢氧化物或有机酸盐的热固性组合物形成含硅膜， Na，K，Rb或Ce，或锍，碘鎓或铵化合物，（C）有机酸，（D）环醚取代醇和（E）有机溶剂。 含硅膜确保有效的图案形成，光致抗蚀剂图案的有效转印以及基板的精确加工。
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