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1.发明授权Sacrificial film-forming composition, patterning process, sacrificial film and removal method 有权牺牲成膜组合物，图案化工艺，牺牲膜和去除方法公开(公告)号：US07485690B2
公开(公告)日：2009-02-03
申请号：US11148380
申请日：2005-06-09
申请人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
发明人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
IPC分类号： C08G77/08
CPC分类号： G03F7/094 , G03F7/0752 , H01L21/31116 , H01L21/31144 , H01L21/76808
摘要： A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2): X—Y—SiZ3 (1) RnSiZ4-n (2) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.
摘要翻译： 提供牺牲性成膜组合物，其包含（A）作为具有式（1）和（2）的可水解硅烷的共水解缩合物的硅氧烷树脂：<？在线配方说明=“在线配方” end =“lead”？> XY-SiZ3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula end =“lead”？> RnSiZ4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，例如 未取代的羟基或取代或未取代的环氧基，酰氧基或丙烯酰氧基，Y为单键或二价烃基，R为氢或一价烃基，n为0〜3的整数，有机硅树脂为 能够通过式（1）中的交联性有机官能团交联反应，（B）交联剂，（C）酸产生剂和（D）有机溶剂进行交联反应。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。
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2.发明授权Porous film-forming composition, patterning process, and porous sacrificial film 有权多孔成膜组合物，图案化工艺和多孔牺牲膜公开(公告)号：US07417104B2
公开(公告)日：2008-08-26
申请号：US11148371
申请日：2005-06-09
CPC分类号： C08G77/04 , C08G77/08 , C08G77/14 , C09D183/04 , C09D183/06 , G03F7/0757 , H01L21/02123 , H01L21/02211 , H01L21/02282 , H01L21/0276 , H01L21/31144 , H01L21/3121 , H01L21/76808
摘要： A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.
摘要翻译： 提供了一种多孔成膜组合物，其包含（A）通过具有式（1）的可水解硅烷的水解缩合得到的聚合物：<？in-line-formula description =“In-line Formulas”end =“lead” （1）<β在线公式描述中的一个或多个（1） 其中R 1是一价有机基团或氢，R 2是可水解基团或羟基，并且其中R 1是一价有机基团或氢原子， n为0〜3的整数，其水解物或其部分缩合物，条件是含有至少一种具有有机交联基团的硅化合物为R 1，所述聚合物能够 通过有机交联基团进行交联反应，和（B）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘合性和涂层均匀性，足以形成可溶于剥离溶液中的牺牲膜。
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3.发明授权公开(公告)号：US07910283B2
公开(公告)日：2011-03-22
申请号：US11595941
申请日：2006-11-13
CPC分类号： C08G77/48 , C09D183/14 , G03F7/091
摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.
摘要翻译： 用于形成抗光反射涂层的组合物，其用于使用高达200nm的曝光的光刻工艺，包括通过具有下式的含硅 - 硅键的硅烷化合物水解缩合获得的含硅聚合物：R（6-m） Si2Xm，其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得 可以高精度地处理基板。
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4.发明授权公开(公告)号：US07678529B2
公开(公告)日：2010-03-16
申请号：US11594176
申请日：2006-11-08
CPC分类号： G03F7/0752 , G03F7/0757 , G03F7/094 , G03F7/11 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.
摘要翻译： 多层抗蚀剂工艺包括在可图案化衬底上依次形成底涂层，中间膜和光致抗蚀剂膜，并且在多个阶段中进行蚀刻。 含硅的成膜组合物可用于形成用作蚀刻掩模的中间膜，其包含通过至少一种含Si-Si键的硅烷化合物的水解缩合而得到的含硅聚合物，其具有下式：R（6-m ）Si 2 X m其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高蚀刻选择性。
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公开(公告)号：US20070172759A1
公开(公告)日：2007-07-26
申请号：US11653839
申请日：2007-01-17
IPC分类号： G03F7/26
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/0757
摘要： There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200 degrees C. or less; and an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.
摘要翻译： 公开了用于光刻的抗反射膜组合物，其至少包含质均分子量为30,000以下的光吸收性有机硅树脂，其中分子量小于600的组分占全部树脂的5％以下; 在200℃以下的温度下分解的第一酸产生剂; 和有机溶剂。 可以提供防反射膜组合物，其防止在抗反射膜/光致抗蚀剂膜界面附近的混合，其在具有几乎垂直的壁轮廓的抗反射膜上提供抗蚀剂图案，并且对抗反射的下层提供较小的损伤 电影。
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6.发明授权公开(公告)号：US07855043B2
公开(公告)日：2010-12-21
申请号：US11808100
申请日：2007-06-06
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.
摘要翻译： 由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜 ）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或 锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。
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公开(公告)号：US07585613B2
公开(公告)日：2009-09-08
申请号：US11653839
申请日：2007-01-17
IPC分类号： G03F7/11
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/0757
摘要： There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200 degrees C. or less; and an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.
摘要翻译： 公开了用于光刻的抗反射膜组合物，其至少包含质均分子量为30,000以下的光吸收性有机硅树脂，其中分子量小于600的组分占全部树脂的5％以下; 在200℃以下的温度下分解的第一酸产生剂; 和有机溶剂。 可以提供防反射膜组合物，其防止在抗反射膜/光致抗蚀剂膜界面附近的混合，其在具有几乎垂直的壁轮廓的抗反射膜上提供抗蚀剂图案，并且对抗反射的下层提供较小的损伤 电影。
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8.发明授权Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same 有权防反射膜形成用组合物及其制造方法以及使用其的防反射膜及图案形成方法公开(公告)号：US07541134B2
公开(公告)日：2009-06-02
申请号：US11150565
申请日：2005-06-10
申请人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
发明人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
CPC分类号： G03F7/091 , Y10S438/952
摘要： The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention also provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.
摘要翻译： 本发明提供了一种抗反射膜的材料，其特征在于相对于抗蚀剂具有高蚀刻选择性，即与抗蚀剂相比具有快的蚀刻速度，并且还可以除去不损坏膜的膜 待处理。 本发明还提供了使用该防反射膜形成组合物在基板上形成抗反射膜层的图案形成方法，以及使用该抗反射膜作为硬掩模的图案形成方法以及使用该抗反射膜的图案形成方法 膜作为加工基材的硬掩模。 本发明还提供一种抗反射膜形成组合物，其包含有机溶剂，交联剂和包含通过水解和缩合多于一种硅化合物，交联基团和非交联的光吸收基团的聚合物 组。
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9.发明授权Sacrificial film-forming composition, patterning process, sacrificial film and removal method 有权牺牲成膜组合物，图案化工艺，牺牲膜和去除方法公开(公告)号：US07385021B2
公开(公告)日：2008-06-10
申请号：US11148161
申请日：2005-06-09
IPC分类号： C08G77/08
CPC分类号： G03F7/0752 , C08K5/0025 , C08L83/06 , G03F7/091 , G03F7/11 , C08L2666/28
摘要： A sacrificial film-forming composition is provided comprising (A) an organofunctional silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formula (1) and formula (2) and/or (3): X—Y—SiZ3 (1) RnSiZ4-n (2) P—SiZ3 (3) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, n is an integer of 0-3, and P is a substituent group which readily decomposes and volatilizes upon thermal decomposition, (B) a crosslinking agent, (C) an acid generator, (D) an extender or porogen, and (E) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.
摘要翻译： 提供了牺牲成膜组合物，其包含（A）有机官能有机硅树脂，其为具有式（1）和式（2）和/或（3）的可水解硅烷的共水解缩合物：<β直列式 描述=“在线公式”end =“lead”？> XY-SiZ 3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？ > <？in-line-formula description =“In-line Formulas”end =“lead”？> R SiZ 4-n（2） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> P-SiZ <3 >（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，Y是单键或二价烃基 ，R为氢或一价烃基，n为0-3的整数，P为在热分解时容易分解挥发的取代基，（B）交联剂，（C）aci （D）增量剂或致孔剂，和（E）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。
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10.发明申请公开(公告)号：US20080026322A1
公开(公告)日：2008-01-31
申请号：US11808100
申请日：2007-06-06
IPC分类号： G03C1/00
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.
摘要翻译： 由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜 ）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或 锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。
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