公开(公告)号：US20080290472A1

公开(公告)日：2008-11-27

申请号：US12029562

申请日：2008-02-12

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/58 ,  C08K3/34 ,  C08K3/36 ,  B32B5/18 ,  H01L21/312

CPC分类号： H01L21/31695 ,  C08G77/16 ,  C08G77/70 ,  C08G77/80 ,  C08K3/36 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249953 ,  C08L83/00

摘要： Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4   (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n   (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.

摘要翻译： 本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物 以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同 当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

公开(公告)号：US08822128B2

公开(公告)日：2014-09-02

申请号：US13604270

申请日：2012-09-05

申请人： Motoaki Iwabuchi ,  Tsutomu Ogihara

发明人： Motoaki Iwabuchi ,  Tsutomu Ogihara

IPC分类号： G03F7/004 ,  B01D37/02 ,  G03F7/075

CPC分类号： G03F7/004 ,  B01D37/025 ,  G03F7/075 ,  G03F7/16

摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.

摘要翻译： 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，使胶态溶胶通过过滤器 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。

公开(公告)号：US07485690B2

公开(公告)日：2009-02-03

申请号：US11148380

申请日：2005-06-09

申请人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda ,  Dirk Pfeiffer

发明人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda ,  Dirk Pfeiffer

IPC分类号： C08G77/08

CPC分类号： G03F7/094 ,  G03F7/0752 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76808

摘要： A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2): X—Y—SiZ3  (1) RnSiZ4-n  (2) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.

摘要翻译： 提供牺牲性成膜组合物，其包含（A）作为具有式（1）和（2）的可水解硅烷的共水解缩合物的硅氧烷树脂：<？在线配方说明=“在线配方” end =“lead”？> XY-SiZ3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula end =“lead”？> RnSiZ4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，例如 未取代的羟基或取代或未取代的环氧基，酰氧基或丙烯酰氧基，Y为单键或二价烃基，R为氢或一价烃基，n为0〜3的整数，有机硅树脂为 能够通过式（1）中的交联性有机官能团交联反应，（B）交联剂，（C）酸产生剂和（D）有机溶剂进行交联反应。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。

公开(公告)号：US07417104B2

公开(公告)日：2008-08-26

申请号：US11148371

申请日：2005-06-09

申请人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

发明人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： C08G77/08 ,  C08L83/04

CPC分类号： C08G77/04 ,  C08G77/08 ,  C08G77/14 ,  C09D183/04 ,  C09D183/06 ,  G03F7/0757 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76808

摘要： A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n  (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.

摘要翻译： 提供了一种多孔成膜组合物，其包含（A）通过具有式（1）的可水解硅烷的水解缩合得到的聚合物：<？in-line-formula description =“In-line Formulas”end =“lead” （1）<β在线公式描述中的一个或多个（1） 其中R 1是一价有机基团或氢，R 2是可水解基团或羟基，并且其中R 1是一价有机基团或氢原子， n为0〜3的整数，其水解物或其部分缩合物，条件是含有至少一种具有有机交联基团的硅化合物为R 1，所述聚合物能够 通过有机交联基团进行交联反应，和（B）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘合性和涂层均匀性，足以形成可溶于剥离溶液中的牺牲膜。

公开(公告)号：US07332446B2

公开(公告)日：2008-02-19

申请号：US10808692

申请日：2004-03-25

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L21/469

CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.

摘要翻译： 根据本发明，可以使用普通的半导体工艺容易地形成具有控制厚度的薄膜。 提供一种用于形成具有优异的介电性能和机械性能的多孔膜的涂布液。 具体地，用于形成多孔膜的涂布液包括通过一种或多种由式（X 2 O 2）O表示的硅酸盐化合物（SiO 2）的缩合获得的缩合产物， （H 2）2）另外，另外还有一种由式（ⅩⅪ）表示的有机硅酸盐化合物 （H 2 O）C（H 2 O）C（H 2 O） 。 因此，可以制造用于半导体制造工艺中具有足够的机械强度和介电性能的多孔绝缘膜。

公开(公告)号：US20070238300A1

公开(公告)日：2007-10-11

申请号：US11783542

申请日：2007-04-10

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Motoaki Iwabuchi

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Motoaki Iwabuchi

IPC分类号： H01L21/311

CPC分类号： C08G77/08 ,  C08L83/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122

摘要： A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.

摘要翻译： 由含有（A）通过在酸催化剂的存在下进行水解性缩合而得到的含硅化合物，并从反应混合物中基本除去酸催化剂的热固性组合物形成含硅膜， （B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或锍，碘鎓盐或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。 该组合物有效地使光刻后的图案缺陷的发生最小化并且是稳定的。

公开(公告)号：US07202013B2

公开(公告)日：2007-04-10

申请号：US10858997

申请日：2004-06-02

申请人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

发明人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

IPC分类号： G03C1/73

CPC分类号： G03F7/091 ,  C09D183/04 ,  G03F7/0045 ,  G03F7/0757 ,  Y10T428/31663

摘要： It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing.The present invention provides an antireflective film material comprising a polymer (A) comprising copolymerized repeating units expressed by the Formula (1) and/or the Formula (2), an organic solvent (B), an acid generator (C) and an optional crosslinking agent (D)

摘要翻译： 本发明的目的是提供一种抗蚀剂材料，该防反射膜相对于抗蚀剂具有高蚀刻选择性，即具有比抗蚀剂更快的蚀刻速度，用于形成抗反射膜层的图案形成方法 在使用该防反射膜材料的基板上，使用该抗反射膜作为基板处理的硬掩模的图案形成方法。

公开(公告)号：US20130108957A1

公开(公告)日：2013-05-02

申请号：US13604270

申请日：2012-09-05

申请人： Motoaki Iwabuchi ,  Tsutomu Ogihara

发明人： Motoaki Iwabuchi ,  Tsutomu Ogihara

IPC分类号： G03F7/004 ,  G03F7/075

CPC分类号： G03F7/004 ,  B01D37/025 ,  G03F7/075 ,  G03F7/16

摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.

摘要翻译： 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，将胶态溶胶从 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。

公开(公告)号：US07910283B2

公开(公告)日：2011-03-22

申请号：US11595941

申请日：2006-11-13

申请人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： G03F7/039 ,  G03F7/11

CPC分类号： C08G77/48 ,  C09D183/14 ,  G03F7/091

摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.

摘要翻译： 用于形成抗光反射涂层的组合物，其用于使用高达200nm的曝光的光刻工艺，包括通过具有下式的含硅 - 硅键的硅烷化合物水解缩合获得的含硅聚合物：R（6-m） Si2Xm，其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得 可以高精度地处理基板。

公开(公告)号：US07678529B2

公开(公告)日：2010-03-16

申请号：US11594176

申请日：2006-11-08

申请人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Takafumi Ueda

IPC分类号： G03F7/075 ,  G03F7/11 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

CPC分类号： G03F7/0752 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122

摘要： A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.

摘要翻译： 多层抗蚀剂工艺包括在可图案化衬底上依次形成底涂层，中间膜和光致抗蚀剂膜，并且在多个阶段中进行蚀刻。 含硅的成膜组合物可用于形成用作蚀刻掩模的中间膜，其包含通过至少一种含Si-Si键的硅烷化合物的水解缩合而得到的含硅聚合物，其具有下式：R（6-m ）Si 2 X m其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高蚀刻选择性。