摘要:
Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R1 is H or a monovalent C1-C20 hydrocarbon group in which any —CH2— moiety may be replaced by —O— or —C(═O)—, R2 is H or a monovalent C1-C6 hydrocarbon group, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, and M1 is Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions.
摘要:
Tetrahydrofuran compounds of formula (1) wherein the broken line represents a single bond, a divalent organic group, or a structure in which the alicyclic structure in the form of norbornene or tetracyclo[4.4.0.12,5.17,10]dodecene and the tetrahydrofuran cyclic structure share one or two constituent carbon atoms, and k is 0 or 1 are novel and useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography
摘要:
The present invention provides novel tertiary alcohol compounds which are useful as monomers for the preparation of photoresist materials having high transparency and a great affinity for the substrate and hence suitable for use in photolithography using a light source comprising preferably light having a wavelength of 300 nm or less and more preferably light emitted from an ArF excimer laser. Specifically, the present invention provides tertiary alcohols compounds represented by the following general formula (1): wherein R1 and R2 each independently represent a straigh-chain, branched or cyclic alkyl group having 1 to 10 carbon atoms, in which some or all of the hydrogen atoms on the constituent carbon atoms may be replaced by a halogen atom or halogen atoms, or R1 and R2 may be joined together to form an aliphatic hydrocarbon ring; Z represents a straight-chain, branched or cyclic divalent organic group having 2 to 10 carbon atoms; and k is 0 or 1.
摘要:
There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.
摘要:
The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.
摘要:
A resist protective coating material is provided comprising a polymer having a partial structure of formula (1) wherein R0 is H, F, alkyl or alkylene, and R1 is fluorinated alkyl or alkylene. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.
摘要:
The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.
摘要:
A resist protective coating material is provided comprising a polymer having a partial structure of formula (1) wherein R0 is H, F, alkyl or alkylene, and R1 is fluorinated alkyl or alkylene. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.
摘要:
There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.
摘要:
Amine compounds having a cyano group are useful in resist compositions for preventing a resist film from thinning and also for enhancing the resolution and focus margin of resist.