Tetrahydrofuran compounds having alicyclic structure
    92.
    发明授权
    Tetrahydrofuran compounds having alicyclic structure 有权
    具有脂环结构的四氢呋喃化合物

    公开(公告)号:US06509481B2

    公开(公告)日:2003-01-21

    申请号:US10117218

    申请日:2002-04-08

    IPC分类号: C07D31500

    CPC分类号: C07D307/12 C07D307/06

    摘要: Tetrahydrofuran compounds of formula (1) wherein the broken line represents a single bond, a divalent organic group, or a structure in which the alicyclic structure in the form of norbornene or tetracyclo[4.4.0.12,5.17,10]dodecene and the tetrahydrofuran cyclic structure share one or two constituent carbon atoms, and k is 0 or 1 are novel and useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography

    摘要翻译: 式(1)的四氢呋喃化合物,其中虚线表示单键,二价有机基团或其中降冰片烯或四环[4.4.0.12,5.17,10]十二碳烯形式的脂环结构和四氢呋喃环状 结构共享一个或两个组成碳原子,并且k为0或1是新颖的并且可用作形成用于化学增强抗蚀剂组合物中的基础树脂的单体,其适用于微图案光刻

    Tertiary alcohol compounds having an alicyclic structure
    93.
    发明授权
    Tertiary alcohol compounds having an alicyclic structure 有权
    具有脂环结构的叔醇化合物

    公开(公告)号:US06469220B2

    公开(公告)日:2002-10-22

    申请号:US10025064

    申请日:2001-12-19

    IPC分类号: C07C3522

    摘要: The present invention provides novel tertiary alcohol compounds which are useful as monomers for the preparation of photoresist materials having high transparency and a great affinity for the substrate and hence suitable for use in photolithography using a light source comprising preferably light having a wavelength of 300 nm or less and more preferably light emitted from an ArF excimer laser. Specifically, the present invention provides tertiary alcohols compounds represented by the following general formula (1): wherein R1 and R2 each independently represent a straigh-chain, branched or cyclic alkyl group having 1 to 10 carbon atoms, in which some or all of the hydrogen atoms on the constituent carbon atoms may be replaced by a halogen atom or halogen atoms, or R1 and R2 may be joined together to form an aliphatic hydrocarbon ring; Z represents a straight-chain, branched or cyclic divalent organic group having 2 to 10 carbon atoms; and k is 0 or 1.

    摘要翻译: 本发明提供新颖的叔醇化合物,其可用作制备具有高透明度和对基材的极好亲和力的光致抗蚀剂材料的单体,因此适用于使用光源的光刻法,该光源优选包含波长为300nm的光或 更优选由ArF准分子激光器发出的光。特别地,本发明提供由以下通式(1)表示的叔醇化合物:其中R 1和R 2各自独立地表示具有1个 10个碳原子,其中构成碳原子上的一些或全部氢原子可以被卤素原子或卤素原子取代,或者R1和R2可以连接在一起形成脂族烃环; Z表示具有2〜10个碳原子的直链,支链或环状二价有机基团; k为0或1。

    Resist protective film composition and patterning process
    94.
    发明申请
    Resist protective film composition and patterning process 有权
    抗保护膜组成和图案化工艺

    公开(公告)号:US20070275326A1

    公开(公告)日:2007-11-29

    申请号:US11798471

    申请日:2007-05-14

    IPC分类号: G03C1/00

    摘要: There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.

    摘要翻译: 公开了一种用于在光致抗蚀剂膜上形成保护膜的抗蚀保护膜组合物,其包括:至少包含具有一个或多个选自羧基和α-三氟甲醇基团的基团的重复单元的聚合物; 和胺化合物。 可以提供一种抗蚀剂保护膜组合物,当在光致抗蚀剂膜上形成保护膜时,可以提供更确定的矩形和优异的图案。

    RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD
    95.
    发明申请
    RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD 审中-公开
    耐腐蚀膜材料和图案形成方法

    公开(公告)号:US20120249995A1

    公开(公告)日:2012-10-04

    申请号:US13494746

    申请日:2012-06-12

    IPC分类号: G03B27/32

    摘要: The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.

    摘要翻译: 本发明是用于浸没式光刻的保护膜材料,其能够进行希望的浸渍光刻,可以与光致抗蚀剂层的显影同时除去,并且具有优异的工艺适应性。 本发明还包括使用该材料形成图案的方法。 更具体地说,本发明是一种保护膜材料,其包含(i)包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含 具有无氟烷基和任选的碱可溶重复单元的重复单元,或(ii)含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元 无氟烷基和任选的碱溶性重复单元。

    Resist protective coating material and patterning process
    96.
    发明授权
    Resist protective coating material and patterning process 有权
    抵抗保护涂料和图案化过程

    公开(公告)号:US08323872B2

    公开(公告)日:2012-12-04

    申请号:US11451498

    申请日:2006-06-13

    IPC分类号: G03C1/00 G03C5/00 G03F7/00

    摘要: A resist protective coating material is provided comprising a polymer having a partial structure of formula (1) wherein R0 is H, F, alkyl or alkylene, and R1 is fluorinated alkyl or alkylene. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.

    摘要翻译: 提供抗蚀剂保护涂层材料,其包含具有式(1)的部分结构的聚合物,其中R 0是H,F,烷基或亚烷基,R 1是氟化烷基或亚烷基。 在图案形成过程中,材料在抗蚀剂膜上形成保护性涂层,其是不溶于水的,可溶于碱性显影剂中并且与抗蚀剂膜不混溶,从而有​​效地实施浸渍光刻。 在碱显影过程中,可以同时实现抗蚀剂膜的开发和保护涂层的去除。

    RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD
    97.
    发明申请
    RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD 审中-公开
    耐腐蚀膜材料和图案形成方法

    公开(公告)号:US20070122736A1

    公开(公告)日:2007-05-31

    申请号:US11550204

    申请日:2006-10-17

    IPC分类号: G03C1/00

    摘要: The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.

    摘要翻译: 本发明是用于浸没式光刻的保护膜材料,其能够进行希望的浸渍光刻,可以与光致抗蚀剂层的显影同时除去,并且具有优异的工艺适应性。 本发明还包括使用该材料形成图案的方法。 更具体地说,本发明是一种保护膜材料,其包含(i)包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含 具有无氟烷基和任选的碱可溶重复单元的重复单元,或(ii)含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元 无氟烷基和任选的碱溶性重复单元。

    Resist protective coating material and patterning process
    98.
    发明申请
    Resist protective coating material and patterning process 有权
    抵抗保护涂料和图案化过程

    公开(公告)号:US20070003867A1

    公开(公告)日:2007-01-04

    申请号:US11451498

    申请日:2006-06-13

    IPC分类号: G03C1/00

    摘要: A resist protective coating material is provided comprising a polymer having a partial structure of formula (1) wherein R0 is H, F, alkyl or alkylene, and R1 is fluorinated alkyl or alkylene. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography. During alkali development, development of the resist film and removal of the protective coating can be simultaneously achieved.

    摘要翻译: 提供抗蚀剂保护涂层材料,其包含具有式(1)的部分结构的聚合物,其中R 0是H,F,烷基或亚烷基,R 1是氟化的 烷基或亚烷基。 在图案形成过程中,材料在抗蚀剂膜上形成保护性涂层,其是不溶于水的,可溶于碱性显影剂中并且与抗蚀剂膜不混溶,从而有​​效地实施浸渍光刻。 在碱显影过程中,可以同时实现抗蚀剂膜的开发和保护涂层的去除。

    Resist protective film composition and patterning process
    99.
    发明授权
    Resist protective film composition and patterning process 有权
    抗保护膜组成和图案化工艺

    公开(公告)号:US07759047B2

    公开(公告)日:2010-07-20

    申请号:US11798471

    申请日:2007-05-14

    摘要: There is disclosed a resist protective film composition for forming a protective film on a photoresist film, comprising: at least a polymer including a repeating unit having one or more groups selected from a carboxyl group and α-trifluoromethyl alcohol groups; and an amine compound. There can be provided a resist protective film composition that makes it possible to provide more certainly rectangular and excellent patterns when a protective film is formed on a photoresist film.

    摘要翻译: 公开了一种用于在光致抗蚀剂膜上形成保护膜的抗蚀保护膜组合物,其包括:至少包含具有一个或多个选自羧基和α-三氟甲醇基团的基团的重复单元的聚合物; 和胺化合物。 可以提供一种抗蚀剂保护膜组合物,当在光致抗蚀剂膜上形成保护膜时,可以提供更确定的矩形和优异的图案。