摘要:
Novel polymerizable ester compounds having formulae (1) to (4) undergo no acid-induced decomposition by β-elimination wherein A1 is a polymerizable functional group having a carbon-carbon double bond, R1 is H or —C—(R5)3, R2 and R3 are alkyl, R4 is H or alkyl, R5 is a monovalent hydrocarbon group, X is alkylene, Y is methylene, ethylene or isopropylidene, Z is alkylene, and n=1 or 2. Resist compositions comprising polymers derived from the ester compounds have excellent sensitivity and resolution and lend themselves to micropatterning lithography.
摘要:
The present invention provides ester group-containing tertiary amine compounds of the formula (R1OCH2CH2)nN(CH2CH2CO2R2)3-n which, when used as additives in chemical amplification photolithography, can yield photoresists having a high resolution and an excellent focus margin. The present invention also provides a process comprising the step of subjecting a primary or secondary amine compound to Michael addition to an acrylic ester compound; a process comprising the steps of subjecting monoethanolamine or diethanolamine to Michael addition to an acrylic ester compound so as to form an ester group-containing amine compound and introducing a R1 group to the resultant ester group-containing amine compound; and a process comprising the step of effecting the ester exchange reaction of an ester group-containing tertiary amine with R2OH.
摘要翻译:本发明提供了式(R 1)2 OCH 2 CH 2 N酯的含酯基的叔胺化合物 > N(CH 2 CH 2)2 CO 2 N 2 - (CH 2)3 - n - 当用作化学放大光刻中的添加剂时,可以产生具有高分辨率和优异聚焦余量的光致抗蚀剂。 本发明还提供了一种方法,其包括使伯胺或仲胺化合物与丙烯酸酯化合物进行迈克尔加成步骤; 一种方法包括以下步骤:将一乙醇胺或二乙醇胺加入到丙烯酸酯化合物中以形成含酯基的胺化合物并将R 1 O 2基团引入所得的含酯基胺 复合; 以及包括使含酯基的叔胺与R 2 OH进行酯交换反应的步骤的方法。
摘要:
Novel tertiary (meth)acrylate compounds having a lactone structure are polymerizable into polymers having improved transparency, especially at the exposure wavelength of an excimer laser and dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, have a high resolution, and lend themselves to micropatterning with electron beams or deep-UV rays.
摘要:
Provided is a novel epoxy compound useful, in photolithography, as a monomer for preparing a photoresist material excellent in transparency and affinity to a substrate. More specifically, provided are an epoxy compound represented by the following formula (1): wherein, R1 and R2 each independently represents a hydrogen atom or a linear, branched or cyclic C1-10 alkyl group in which hydrogen atoms on one or more constituent carbon atoms thereof may be partially or entirely substituted by one or more halogen atoms, or the constituent —CH2— may be substituted by an oxygen atom, or R1 and R2 may be coupled together to form an aliphatic hydrocarbon ring; R3 represents a linear, branched or cyclic C1-10 alkyl group or a C1-15 acyl or alkoxycarbonyl group in which hydrogen atoms on one or more constituent carbon atoms thereof may be partially or entirely substituted by one or more halogen atoms; X represents CH2, oxygen or sulfur; k stands for 0 or 1; and m stands for an integer of 0 to 5; and a polymer compound having recurring units available therefrom.
摘要:
Tertiary alcohol compounds of formula (1) are novel wherein R1 and R2 are C1-10 alkyl groups which may have halogen substituents, or R1 and R2 may form an aliphatic hydrocarbon ring, Y and Z are a single bond or a divalent C1-10 organic group, and k=0 or 1. Using the tertiary alcohol compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, etching resistance and substrate adhesion.
摘要:
An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, k is 0 or 1, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom and which may contain a hetero atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译:提供下式(1)的酯化合物:R1是H,甲基或CH2CO2R3,R2是H,甲基或CO2R3,R3是C1-C15烷基,k是0或1,Z是二价C 2 -C 20烃 与碳原子形成单环或桥环的基团,其可以含有杂原子,m为0或1,n为0,1,2或3,2m + n = 2或3.一种抗蚀剂组合物,其包含 作为基础树脂,由酯化合物产生的聚合物对高能辐射敏感,具有优异的灵敏度,分辨率和耐蚀刻性,并且适用于使用电子束或深UV的微图案。
摘要:
An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译:提供下式(1)的酯化合物:R 1是H,甲基或CH 2 CO 2 R 3,R 2是H,甲基或CO 2 R 3,R 3是C 1 -C 15烷基,Z是形成单环的二价C 2 -C 20烃基 或与碳原子的桥环,m为0或1,n为0,1,2或3,2m + n = 2或3.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物是敏感的 对高能辐射,具有优异的灵敏度和分辨率,适用于使用电子束或深紫外线的微图案。
摘要:
A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 and R15 are acid labile groups, and at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the remainders are H or alkyl, at least one of R10 to R13 is a monovalent hydrocarbon group containing a —CO2— partial structure, and the remainders are H or alkyl, R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group, Z is a trivalent hydrocarbon group, X is —CH2— or —O—, k=0 or 1, x is>0, a, b, c and d are≧0, satisfying x+a+b+c+d=1. A resist composition comprising the polymer has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.
摘要翻译:提供了包含式(1)的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H,甲基或CH2CO2R3,R2是H,甲基或CO2R3,R3是烷基,R4是H,烷基,烷氧基烷基或酰基 ,R 5和R 15是酸不稳定基团,R6至R9中的至少一个是含羧基或含羟基的一价烃基,剩余物为H或烷基,R 10至R 13中的至少一个为含有 -CO 2部分结构,其余为H或烷基,R 14为多环烃基或含多环烃基的烷基,Z为三价烃基,X为-CH 2 - 或-O-,k = 0或1 ,x为> 0,a,b,c和d为> = 0,满足x + a + b + c + d = 1。 包含聚合物的抗蚀剂组合物具有显着提高的灵敏度,分辨率和耐蚀刻性,并且在微细加工中非常有用。
摘要:
A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.
摘要:
Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. R1 is H or C1-6 alkyl, R2 is an acid labile group, k is 0 or 1, and m is an integer from 0 to 5.