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    Resist composition and patterning process
    3.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06667145B1

    公开(公告)日：2003-12-23

    申请号：US09694369

    申请日：2000-10-24

    申请人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    发明人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    IPC分类号： G03C173

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.

    摘要翻译： 抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物，其Mw为1,000-500,000.R 1是H，甲基或CO 2 R 2，R 2是烷基，R 3是 H，甲基或CH 2 CO 2 R 2，R 4至R 7中的至少一个是含羧基或羟基的一价烃基，并且提醒独立地为H或烷基，R 8， R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基，并且提醒独立地是H或烷基，R 12是多环烃基或含有这种多环的烷基 烃基，R 13是酸不稳定基团，Z是构成其中含有羧酸酯，碳酸酯或酸酐的5-或6-元环的二价原子基团，k是0或1，x是 数字从0到1，“a”到“d”从0到小于1，x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率，基底粘附性和耐蚀刻性，并且在精确微细加工中非常有用。

    Pattern forming process and resist-modifying composition
    8.
    发明授权
    Pattern forming process and resist-modifying composition 有权
    图案形成工艺和抗蚀剂改性组合物

    公开(公告)号：US08367310B2

    公开(公告)日：2013-02-05

    申请号：US12708196

    申请日：2010-02-18

    申请人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

    发明人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0397 ,  G03F7/0035 ,  G03F7/40

    摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.

    摘要翻译： 图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到 第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 改性的第一抗蚀剂膜与纯水的接触角为50°-85°。

    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS
    9.
    发明申请
    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS 有权
    电阻修饰组合物和图案形成工艺

    公开(公告)号：US20100297563A1

    公开(公告)日：2010-11-25

    申请号：US12785930

    申请日：2010-05-24

    申请人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环，和醇类溶剂。