公开(公告)号：US07505306B2

公开(公告)日：2009-03-17

申请号：US11609487

申请日：2006-12-12

申请人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

发明人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.

摘要翻译： 磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。 第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。 第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。 第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。 第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

公开(公告)号：US20080035958A1

公开(公告)日：2008-02-14

申请号：US11833504

申请日：2007-08-03

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic random access memory includes a semiconductor substrate having a projection projecting from a substrate surface, first and second gate electrodes and a first source diffusion layer formed on first and second side surfaces and an upper surface of the projection, first and second drain diffusion layers formed in the substrate surface at roots on the first and second side surfaces of the first projection, first and second word lines formed above the semiconductor substrate, a bit line formed above the first and second word lines, a first magnetoresistive effect element formed between the bit line and the first word line, a second magnetoresistive effect element formed between the bit line and the second word line, a first contact which connects the first magnetoresistive effect element and the first drain diffusion layer, and a second contact which connects the second magnetoresistive effect element and the second drain diffusion layer.

摘要翻译： 磁性随机存取存储器包括：半导体衬底，具有从衬底表面突出的突出部，第一和第二栅电极以及形成在第一和第二侧表面上的第一源极扩散层和突起的上表面;第一和第二漏极扩散层 形成在第一突起的第一和第二侧表面上的根部处的基底表面上，形成在半导体衬底上方的第一和第二字线，形成在第一和第二字线上方的位线，形成在第一和第二字线之间的第一磁阻效应元件 位线和第一字线，形成在位线和第二字线之间的第二磁阻效应元件，连接第一磁阻效应元件和第一漏极扩散层的第一触点和连接第二磁阻的第二触点 效应元件和第二漏极扩散层。

公开(公告)号：US07092282B2

公开(公告)日：2006-08-15

申请号：US10638353

申请日：2003-08-12

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： H01L27/222 ,  G11C11/15

摘要： A semiconductor integrated circuit device comprises magneto-resistive elements, bit lines electrically connected to the magneto-resistive elements at an end of the latter, read word lines electrically connected to the magneto-resistive elements at the other end of the latter and write word lines. The write word lines are insulated from the magneto-resistive elements and adapted to apply a magnetic field to selected magneto-resistive elements at the time of writing data to the selected magneto-resistive elements.

摘要翻译： 半导体集成电路器件包括磁阻元件，位于后端的电阻元件电连接的位线，在后者的另一端电连接到磁阻元件的读字线和写字线 。 写字线与磁阻元件绝缘，并且适于在将数据写入所选择的磁阻元件时将磁场施加到所选择的磁阻元件。

公开(公告)号：US07054187B2

公开(公告)日：2006-05-30

申请号：US10981508

申请日：2004-11-05

申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

公开(公告)号：US20060023498A1

公开(公告)日：2006-02-02

申请号：US11206002

申请日：2005-08-18

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/14

CPC分类号： H01L31/02164 ,  H01L31/18

摘要： A magnetic memory device includes an SOI substrate having a first semiconductor layer, a first insulating film formed on the first semiconductor layer, and a second semiconductor layer formed on the first insulating film, an element isolation insulating film formed selectively in the second semiconductor layer extending from a surface of the second semiconductor layer with a depth reaching the first insulating film, a switching element formed in the second semiconductor layer, a magneto-resistive element connected to the switching element, a first wiring extending in a first direction at a distance below the magneto-resistive element, and a second wiring formed on the magneto-resistive element and extending in a second direction different from the first direction.

公开(公告)号：US06958932B2

公开(公告)日：2005-10-25

申请号：US10199176

申请日：2002-07-22

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

IPC分类号： H01L27/105 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C17/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L21/76895 ,  H01L43/08

摘要： A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.

摘要翻译： 半导体集成电路器件包括单元晶体管; 设置在单元晶体管上方的位线; 设置在所述位线上方的磁阻元件，所述磁阻元件的第一端部电连接到所述位线; 设置在磁阻元件上方的电池内局部互连，将电池晶体管的源极和漏极区域中的一个耦合到磁阻元件的第二端部的电池内局部互连; 以及设置在电池内局部互连之上的写入字线，写入字线和单元间局部互连之间的一部分仅用绝缘体填充。

公开(公告)号：US06946712B2

公开(公告)日：2005-09-20

申请号：US10288366

申请日：2002-11-06

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/15 ,  G11C7/00 ,  H01L21/8239 ,  H01L27/00 ,  H01L29/76 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02164 ,  H01L31/18

摘要： A magnetic memory device includes an SOI substrate having a first semiconductor layer, a first insulating film formed on the first semiconductor layer, and a second semiconductor layer formed on the first insulating film, an element isolation insulating film formed selectively in the second semiconductor layer extending from a surface of the second semiconductor layer with a depth reaching the first insulating film, a switching element formed in the second semiconductor layer, a magneto-resistive element connected to the switching element, a first wiring extending in a first direction at a distance below the magneto-resistive element, and a second wiring formed on the magneto-resistive element and extending in a second direction different from the first direction.

摘要翻译： 一种磁存储器件包括具有第一半导体层，形成在第一半导体层上的第一绝缘膜和形成在第一绝缘膜上的第二半导体层的SOI衬底，选择性地形成在第二半导体层中延伸的元件隔离绝缘膜 从所述第二半导体层的表面到达所述第一绝缘膜的深度，形成在所述第二半导体层中的开关元件，连接到所述开关元件的磁阻元件，在第一方向上延伸的距离低于第一布线的第一布线 磁阻元件和形成在磁阻元件上并沿与第一方向不同的第二方向延伸的第二布线。

公开(公告)号：US06900490B2

公开(公告)日：2005-05-31

申请号：US10649986

申请日：2003-08-28

申请人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

发明人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228

摘要： In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.

摘要翻译： 在磁性随机存取存储器中，用于通过将电流传递到靠近MTJ元件布置的写布线中来产生感应磁通量，其电阻值根据包括两个磁性层的MTJ元件的两个磁性层的磁化阵列状态而变化， 磁性层对应于“0”/“1”的存储信息，并且通过改变MTJ元件的自由层的磁化方向来写入信息，MTJ元件的形状被扭曲以与磁场大体一致 从写布线产生的曲线。

公开(公告)号：US06737691B2

公开(公告)日：2004-05-18

申请号：US10327910

申请日：2002-12-26

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： H01L31062

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/224 ,  H01L27/228

摘要： A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a write word line is disposed right under the MTJ element. The lower and side surfaces of the write word line are also coated with the yoke materials which have the high permeability. The yoke materials on the lower and side surfaces of the write word line are also separated from each other by the barrier layer.

摘要翻译： 数据选择线（写入线）被放置在MTJ元件上。 数据选择线的上表面和侧表面涂覆有磁导率高的磁轭材料。 磁轭材料通过阻挡层彼此分离。 类似地，写字线被布置在MTJ元件的正下方。 写字线的下表面和侧表面也涂有具有高磁导率的磁轭材料。 写字线的下表面和侧表面上的轭材料也通过阻挡层彼此分离。

公开(公告)号：US06661689B2

公开(公告)日：2003-12-09

申请号：US10025753

申请日：2001-12-26

申请人： Yoshiaki Asao ,  Hiroshi Ito

发明人： Yoshiaki Asao ,  Hiroshi Ito

IPC分类号： G11C506

CPC分类号： G11C5/063 ,  G11C11/15

摘要： A semiconductor memory device includes a plurality of first wirings extending in a first direction, a plurality of memory elements connected with the first wirings, a plurality of second wirings extending in a second direction different from the first direction, the second wirings being disposed opposite to the first wirings with the memory elements interposed between the first and second wirings, the second wirings being spaced from the memory elements, and first transistors or diodes connected between two adjacent of the second wirings.