公开(公告)号：US20080002459A1

公开(公告)日：2008-01-03

申请号：US11609487

申请日：2006-12-12

申请人： Yoshiaki FUKUZUMI ,  Toshihiko Nagase ,  Yoshiaki Asao

发明人： Yoshiaki FUKUZUMI ,  Toshihiko Nagase ,  Yoshiaki Asao

IPC分类号： G11C11/00 ,  G11C11/24

CPC分类号： G11C11/16

摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.

摘要翻译： 磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。 第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。 第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。 第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。 第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

公开(公告)号：US07505306B2

公开(公告)日：2009-03-17

申请号：US11609487

申请日：2006-12-12

申请人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

发明人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.

摘要翻译： 磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。 第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。 第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。 第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。 第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。

公开(公告)号：US20080225577A1

公开(公告)日：2008-09-18

申请号：US12043617

申请日：2008-03-06

申请人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Toshihiko Nagase

发明人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Toshihiko Nagase

IPC分类号： G11C11/02 ,  H01L29/82 ,  H01L21/00 ,  G11C7/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/1675 ,  H01L27/22 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.

摘要翻译： 磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件， 具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层 所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

公开(公告)号：US07932513B2

公开(公告)日：2011-04-26

申请号：US12043617

申请日：2008-03-06

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Toshihiko Nagase

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Toshihiko Nagase

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L39/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/1675 ,  H01L27/22 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.

摘要翻译： 磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件， 具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层 所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

公开(公告)号：US08941197B2

公开(公告)日：2015-01-27

申请号：US13370075

申请日：2012-02-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L27/22 ,  G11C11/16

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.

摘要翻译： 一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列 其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和 倪

公开(公告)号：US07920412B2

公开(公告)日：2011-04-05

申请号：US12605072

申请日：2009-10-23

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.

摘要翻译： 磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及 具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜 在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接 连接磁阻效应元件和第一触点。

公开(公告)号：US07916522B2

公开(公告)日：2011-03-29

申请号：US12400262

申请日：2009-03-09

申请人： Kiyotaro Itagaki ,  Tsuneo Inaba ,  Yoshihiro Ueda ,  Yoshiaki Asao

发明人： Kiyotaro Itagaki ,  Tsuneo Inaba ,  Yoshihiro Ueda ,  Yoshiaki Asao

IPC分类号： G11C11/15

CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/0092 ,  G11C2213/75 ,  G11C2213/78

摘要： A semiconductor memory device includes n resistance change elements which are arranged in one cell, have a low-resistance state and a high resistance state, are connected in series or parallel, have different resistance values in the same resistance state, and change between the low-resistance state and the high-resistance state under different conditions, and a write circuit which is connected to one end of the n resistance change elements, and applies a pulse current m (1≦m≦n) times to the n resistance change elements during a write operation. Letting Im be a current value of an mth pulse current, condition I1>I2> . . . >Im holds.

摘要翻译： 半导体存储器件包括在一个单元中布置的具有低电阻状态和高电阻状态的n个电阻变化元件串联或并联连接，在相同电阻状态下具有不同的电阻值，并且在低电平 电阻状态和不同条件下的高电阻状态，以及与n个电阻变化元件的一端连接的写入电路，并向n个电阻变化元件施加脉冲电流m（1＆nlE; m＆nlE; n）次 在写操作期间。 令Im为第m个脉冲电流的当前值，条件I1> I2>。 。 。 > Im持有。

公开(公告)号：US07869259B2

公开(公告)日：2011-01-11

申请号：US12406898

申请日：2009-03-18

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0097 ,  G11C16/0466 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165

摘要： A resistance change memory includes a first interconnection, a second interconnection, a first resistance change element which has a first electrode, a second electrode, and a first tunnel insulating film provided between the first electrode and the second electrode, the first tunnel insulating film including a first trap region formed by introducing defects to trap holes or electrons, and the second electrode being connected to the first interconnection, and a first transistor whose current path has one end connected to the first electrode and the other end connected to the second interconnection.

摘要翻译： 电阻变化存储器包括第一互连，第二互连，第一电阻改变元件，其具有设置在第一电极和第二电极之间的第一电极，第二电极和第一隧道绝缘膜，第一隧道绝缘膜包括 通过引入缺陷以捕获空穴或电子而形成的第一陷阱区域，以及第二电极连接到第一互连件，以及第一晶体管，其电流通路的一端连接到第一电极，而另一端连接到第二互连。

公开(公告)号：US20080151608A1

公开(公告)日：2008-06-26

申请号：US11959897

申请日：2007-12-19

申请人： Keiji HOSOTANI ,  Yoshiaki Asao

发明人： Keiji HOSOTANI ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675 ,  G11C2213/75 ,  Y10S977/935

摘要： A semiconductor memory device includes first to fourth resistance change elements sequentially arranged apart from each other in a first direction, a first electrode which connects one terminals of the first and second resistance change elements, a second electrode which connects one terminals of the third and fourth resistance change elements, a bit line which connects the other terminals of the second and third resistance change elements, first to fourth word lines respectively paired with the first to fourth resistance change elements, arranged apart from the first and second electrodes, and running in a second direction, a first current source which supplies a first electric current to a chain structure, when writing data in a selected element, and a second current source which supplies a second electric current to a selected word line which corresponds to the selected element, when writing the data in the selected element.

摘要翻译： 一种半导体存储器件，包括：沿第一方向相互顺序排列的第一至第四电阻变化元件;连接第一和第二电阻变化元件的一个端子的第一电极;连接第三和第四电极的一个端子的第二电极; 电阻变化元件，连接第二和第三电阻变化元件的其他端子的位线，与第一和第四电阻变化元件分别配对的第一至第四字线与第一和第二电极分开配置，并且以 第二方向，当将数据写入所选择的元件时，将第一电流提供给链结构的第一电流源和向对应于所选择的元件的所选择的字线提供第二电流的第二电流源， 在所选元素中写入数据。

公开(公告)号：US07376003B2

公开(公告)日：2008-05-20

申请号：US10465616

申请日：2003-06-20

申请人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

发明人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.

摘要翻译： 使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转 元件。 当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头 在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。