摘要:
A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要:
A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.
摘要:
An object of the present invention is to provide a solid-state image sensor including a filter membrane that has excellent light resistance and can be thinned. A solid-state image sensor 1 having a plurality of pixels, wherein each of the plurality of pixels includes a filter membrane 21 for transmitting light of a predetermined color, and a photoelectric conversion unit 17 for converting the light transmitted through the filter membrane 21 into a charge; the filter membrane 21 is a single layer film composed of an inorganic material; and an optical thickness of the single layer film is smaller than a thickness equivalent to one half of a wavelength of the predetermined color, by a thickness corresponding to an amount of the light of the predetermined color absorbed by the inorganic material.
摘要:
A microcomputer outputs correction data. A shading correction circuit performs a shading correction to a digital image signal using the correction data outputted from the microcomputer. A YC processing circuit generates a video signal from the digital image signal having undergone the shading correction, performs processing such as a gamma correction to the generated video signal, and outputs the video signal having undergone the processing such as the gamma correction.
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要:
A pixel area of a megapixel solid-state color imaging device is divided into unit areas for pixel adding and all the pixels for the same color are added together in each unit area. Accordingly, the percentage of utilized pixels is raised to 100% and aliasing noise to low frequencies in a high-frequency video signal is greatly suppressed by a spatial LPF (low pass filter) effect of the pixel addition in the area units.
摘要:
An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.
摘要:
A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.
摘要:
A solid state imaging apparatus includes a plurality of pixels two-dimensionally arranged in the row direction and the column direction, and every two of the plurality of pixels that are adjacent to each other in the row direction or the column direction include color filters of different colors, respectively. A signal mixture circuit is provided in each same-row and same-color pixel group. Each said same-row and same-color pixel group consisting of ones of the plurality of pixels which are included in a pixel mixture unit to be a subject of pixel signal mixture, which are located in the same row, and which include color filters of the same color. The signal mixture circuit includes a combination of a capacitor and a transmission switch, stores pixel signals from pixels included in a same-row and same-color pixel group and mixes the signals together.
摘要:
A semiconductor device has, on a single substrate, a semiconductor circuit portion and a hollow capacitor portion including a pair of counter electrodes and a hollow part located between the counter electrodes. The hollow part of the hollow capacitor portion is surrounded by an insulating film, and a through hole is formed in the insulating film to communicate with the hollow part. The top surface of the insulating film covering the hollow part is planarized. Part of the insulating film located to the lateral sides of the hollow part supports the other part thereof located on the hollow part and upper one of the counter electrodes.