公开(公告)号：US4839735A

公开(公告)日：1989-06-13

申请号：US135382

申请日：1987-12-21

申请人： Mikio Kyomasu ,  Hitoshi Tanaka ,  Seiichiro Mizuno

发明人： Mikio Kyomasu ,  Hitoshi Tanaka ,  Seiichiro Mizuno

IPC分类号： H01L27/146 ,  H04N3/15

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H04N3/1512 ,  H04N3/1556

摘要： A solid state image sensor in which the charge accumulation period of each picture element can be set at the same point of time. Additionally, the lenngth of the charge period can be set at will, thus providing a video signal picture in which all picture elements bear image information with the same time reference. Sensitivity of the solid state image senosr can be adjusted by setting the length of charge accumulation period. In the solid state image sensor, photodiodes are disposed as picture elements, and video signal is output in accordance with a charge which is light-generated within respective photodiodes. A series circuit of a switch and a capacitance element is connected in parallel with the photodiode. The switch is closed for at least the charge accumulation period during which charge is light-generated within the photodiode, and the video signal is obtained in accordance with level of charging of said capacitance element.

摘要翻译： 固态图像传感器，其中每个像素的电荷累积周期可以被设置在相同的时间点。 此外，可以随意设置充电周期的长度，从而提供视频信号图像，其中所有图像元素具有相同时间参考的图像信息。 可以通过设置电荷累积周期的长度来调整固态图像senosr的灵敏度。 在固态图像传感器中，光电二极管被设置为图像元素，并且根据在各个光电二极管内发光的电荷输出视频信号。 开关和电容元件的串联电路与光电二极管并联连接。 至少在光电二极管内产生光电荷的电荷累积期间开关闭合，并且根据所述电容元件的充电电平获得视频信号。

公开(公告)号：US08379128B2

公开(公告)日：2013-02-19

申请号：US13037038

申请日：2011-02-28

申请人： Seiichiro Mizuno ,  Haruhiro Funakoshi

发明人： Seiichiro Mizuno ,  Haruhiro Funakoshi

IPC分类号： H04N5/335 ,  H04N5/232 ,  H04N5/217 ,  G11C27/02

CPC分类号： H04N5/357 ,  H04N5/3742 ,  H04N5/378

摘要： The present invention relates to a sensor apparatus having a structure capable of obtaining digital values of signal components with a high accuracy using an A/D conversing circuit with the outputted digital value thereof having a small number of expressive bits. In the sensor apparatus, a voltage value corresponding to the amount of incident light to a photodiode is held by a holding circuit through an integrating circuit and a CDS circuit. Meanwhile, a voltage value corresponding to the amount of incident light to an adjacent photodiode is held by another holding circuit through an integrating circuit and a CDS circuit. The voltage values held by the respective different holding circuits are inputted to a subtracting circuit through different paths. The subtracting circuit outputs a voltage value corresponding to the difference between the two inputted voltage values. In an A/D converting section, the difference voltage outputted from the subtracting circuit is converted into a digital value.

摘要翻译： 传感器装置技术领域本发明涉及一种传感器装置，其具有能够使用具有少量表示位的输出数字值的A / D转换电路以高精度获得信号分量的数字值的结构。 在传感器装置中，通过积分电路和CDS电路由保持电路保持与光电二极管的入射光量相对应的电压值。 同时，与通过积分电路和CDS电路的另一个保持电路保持与相邻光电二极管的入射光量相对应的电压值。 由各个不同的保持电路保持的电压值通过不同的路径输入到减法电路。 减法电路输出与两个输入电压值之间的差对应的电压值。 在A / D转换部分中，将从减法电路输出的差分电压转换为数字值。

公开(公告)号：US20120018621A1

公开(公告)日：2012-01-26

申请号：US13147244

申请日：2010-01-29

申请人： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Makoto Kobayashi

发明人： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Makoto Kobayashi

IPC分类号： H03F3/08

CPC分类号： H01L27/0225 ,  G01J1/46 ,  H01L27/14609 ,  H04N5/32 ,  H04N5/355 ,  H04N5/378

摘要： In a signal processing device of an embodiment, an integration circuit accumulates a charge from a photodiode in an integrating capacitor element, and outputs a voltage value according to the amount of charge. A comparator circuit, when the voltage value from the integration circuit has reached a reference value, outputs a saturation signal. A charge injection circuit, in response to the saturation signal, injects an opposite polarity of charge into the integrating capacitor element. A counter circuit performs counting based on the saturation signal. A holding circuit holds the voltage value from the integration circuit. An amplifier circuit outputs a voltage value that is K times (where K>1) larger than the voltage value held by the holding circuit. An A/D converter circuit sets a voltage value that is K times larger than the reference value as the maximum input voltage value, that is, a full-scale value, and outputs a digital value corresponding to the voltage value from the amplifier circuit.

摘要翻译： 在实施例的信号处理装置中，积分电路从积分电容器元件中的光电二极管蓄积电荷，并输出与电荷量相对应的电压值。 比较电路当积分电路的电压值达到基准值时，输出饱和信号。 电荷注入电路响应于饱和信号，向积分电容器元件注入相反的电荷极性。 计数器电路根据饱和信号进行计数。 保持电路保持来自积分电路的电压值。 放大电路输出比保持电路保持的电压值大K倍（K> 1）的电压值。 A / D转换器电路将比参考值大K倍的电压值设置为最大输入电压值，即满量程值，并输出与放大器电路的电压值对应的数字值。

公开(公告)号：US07989753B2

公开(公告)日：2011-08-02

申请号：US10593084

申请日：2005-03-17

申请人： Seiichiro Mizuno ,  Haruhiro Funakoshi ,  Tetsuya Taka

发明人： Seiichiro Mizuno ,  Haruhiro Funakoshi ,  Tetsuya Taka

IPC分类号： H01J40/14

CPC分类号： G01J1/46

摘要： A photodetector of a wide dynamic range of incident light amount detection and low temperature dependence is provided. A first signal processing unit 10m,n includes an integrating circuit 11, a first holding circuit 12, a comparing circuit 13, a second holding circuit 14, and a latching circuit 15. The integrating circuit 11 has a variable capacitor unit that is selectively set to a capacitance value among a plurality of capacitance values, accumulates charges, output from the photodiode, into the variable capacitor unit over an accumulating period that is in accordance with the capacitance value set at the variable capacitor unit, and outputs a voltage V1 that is in accordance with the amount of the accumulated charges. The comparing circuit 13 inputs the voltage V1 output from the integrating circuit 11, performs a quantitative comparison of the voltage V1 with a reference voltage Vref, outputs a compared signal S3 expressing the result of comparison, and, when the voltage V1 output from the integrating circuit 11 at the end of an accumulating period is less than the reference voltage Vref, instructs the first holding circuit 12 to hold the voltage.

摘要翻译： 提供入射光量检测的宽动态范围和低温度依赖性的光电检测器。 第一信号处理单元10m，n包括积分电路11，第一保持电路12，比较电路13，第二保持电路14和锁存电路15.积分电路11具有可选择地设置的可变电容器单元 在多个电容值之间的电容值中，在与可变电容器单元设定的电容值相对应的累积期间，将从光电二极管输出的电荷累积到可变电容器单元中，并输出电容V1 按照累计收费金额。 比较电路13输入从积分电路11输出的电压V1，对参考电压Vref进行电压V1的定量比较，输出表示比较结果的比较信号S3，当从积分电路输出的电压V1 蓄电周期结束时的电路11小于参考电压Vref，指示第一保持电路12保持电压。

公开(公告)号：US20100201966A1

公开(公告)日：2010-08-12

申请号：US12666572

申请日：2008-07-02

申请人： Mitsuhito Mase ,  Takashi Suzuki ,  Seiichiro Mizuno ,  Mitsutaka Takemura

发明人： Mitsuhito Mase ,  Takashi Suzuki ,  Seiichiro Mizuno ,  Mitsutaka Takemura

IPC分类号： G01C3/08 ,  H01L31/12 ,  H01L27/146

CPC分类号： H01L27/1464 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2924/00014

摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

摘要翻译： 作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。 由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合 如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。 如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确 距离测量启用。

公开(公告)号：US07355642B2

公开(公告)日：2008-04-08

申请号：US10535206

申请日：2003-11-18

申请人： Yasuhiro Suzuki ,  Seiichiro Mizuno

发明人： Yasuhiro Suzuki ,  Seiichiro Mizuno

IPC分类号： H04N5/335

CPC分类号： H01L27/14634 ,  H01L27/1446 ,  H01L27/14636 ,  H01L27/14661 ,  H04N5/32 ,  H04N5/335

摘要： The present invention relates to a photo-detecting device having a structure which enables an increase of the number of pixels and advanced high density and further enables precise photo-detection. The photo-detecting device includes N photodiodes, N switches a common wire, an integrating circuit, a first substrate provided with the N photodiodes, and a second substrate provided with the N switches, common wire, and integrating circuit. The N photodiodes and N switches to be electrically connected to each other are electrically connected by bump-connecting the first substrate and the second substrate. In such a construction, a connection wire two-dimensionally laid out that electrically connects the N photodiodes and N switches is unnecessary, thereby shortening the wire path length (reduction of noise). In addition, when the first substrate provided with the N photodiodes are bump-connected to the second substrate provided with the remaining electronic devices, which enables integration of the photodiodes without any consideration for wire layout on the first substrate (high density of pixels).

摘要翻译： 本发明涉及具有能够增加像素数和提高高密度的结构的光检测装置，并进一步实现精确的光检测。 光检测装置包括N个光电二极管，N个公共线开关，积分电路，设置有N个光电二极管的第一基板以及设置有N个开关，公共线和积分电路的第二基板。 电连接的N个光电二极管和N个开关通过凸起连接第一基板和第二基板电连接。 在这种结构中，不需要将N个光电二极管和N个开关电连接的二维布线的连接线，从而缩短线路长度（降低噪声）。 此外，当设置有N个光电二极管的第一衬底与设置有剩余电子器件的第二衬底突起连接时，其能够集成光电二极管，而无需考虑第一衬底上的布线布局（高密度像素）。

公开(公告)号：US07286172B2

公开(公告)日：2007-10-23

申请号：US10343427

申请日：2001-08-03

申请人： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Kazuki Fujita

发明人： Seiichiro Mizuno ,  Hiroo Yamamoto ,  Kazuki Fujita

IPC分类号： H04N3/14

CPC分类号： G01J1/46

摘要： An amount of charges consonant with the intensity of the light entering photodiodes is generated, and the level of the charges is determined by a charge level determination circuit. Based on this determined charge level, a capacitance setting circuit sets a capacitance of an integrating capacitor unit in an integrating circuit. Thereafter, in the integrating circuit, the charges generated by the photodiodes are integrated in the integrating capacitor unit, and a voltage having a value consonant with the amount of the integrated charges is output. When background light is strong and the overall intensity of incident light is high, a comparatively large capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected without saturation. When background light is weak and the overall intensity of incident light is low, a comparatively small capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected at high sensitivity, regardless of the surrounding conditions.

摘要翻译： 产生与进入光电二极管的光的强度相关的电荷量，并且电荷的电平由电荷水平确定电路确定。 基于该确定的充电电平，电容设定电路将积分电容器单元的电容设定在积分电路中。 此后，在积分电路中，由光电二极管产生的电荷积分在积分电容器单元中，并且输出具有与积分电荷量相关的值的电压。 当背景光强且入射光的总强度高时，对于积分电路的可变电容器单元设置较大的电容，并且不饱和地检测入射光的强度。 当背景光弱并且入射光的总强度低时，对于积分电路的可变电容器单元设置相对小的电容，并且不管周围条件如何，以高灵敏度检测入射光的强度。

公开(公告)号：US20060165294A1

公开(公告)日：2006-07-27

申请号：US10504267

申请日：2003-02-12

申请人： Seiichiro Mizuno ,  Tatsumi Yamanaka ,  Yoshimoto Fuji

发明人： Seiichiro Mizuno ,  Tatsumi Yamanaka ,  Yoshimoto Fuji

IPC分类号： G06K9/62

CPC分类号： H01L25/167 ,  G01J1/44 ,  H01L27/14609 ,  H01L27/14634 ,  H01L2924/0002 ,  H04N5/37457 ,  H01L2924/00

摘要： Photodetector 1 is equipped with photodiodes PDn, integrating circuits 10n, CDS circuits 20n, and hold circuits 30n. Each integrating circuit 10n includes an amplifier 11n, a capacitor C, and a switch SW. Photodiodes PDn are aligned on a first substrate 100. A differential pair input part (transistors T1 and T2) of amplifier 11n, capacitor C, etc., of each integrating circuit 10n are disposed on a second substrate 200. A drive part (transistors T5 and T6) of amplifier 11n, etc., of each integrating circuit 10n are disposed on a third substrate 300.

摘要翻译： 光检测器1配备有光电二极管PDn，积分电路10 n，CDS电路20 n和保持电路30 n。 每个积分电路10n包括放大器11n，电容器C和开关SW。 光电二极管PDn在第一衬底100上对齐。 每个积分电路10 n的放大器11n，电容器C等的差分对输入部分（晶体管T 1和T 2）被布置在第二基板 200。 每个积分电路10 n的放大器11 n等的驱动部分（晶体管T 5和T 6）设置在第三基板300上。

公开(公告)号：US06819281B2

公开(公告)日：2004-11-16

申请号：US10469034

申请日：2003-08-26

申请人： Kazuki Fujita ,  Seiichiro Mizuno

发明人： Kazuki Fujita ,  Seiichiro Mizuno

IPC分类号： H03M112

CPC分类号： H03M1/68 ,  H03M1/466 ,  H03M1/804 ,  H04N5/335

摘要： An A/D conversion circuit 20 comprises a coupling capacitor C201, feedback capacitor C202, switch SW202, amplifier 201, comparison portion 202, capacitance control portion 203, and variable capacitance portions 210, 220, and 230. The variable capacitance portion 210 comprises capacitors C211 to C214 and switches SW211 to SW214. One end of each of the capacitors C211 to C214 is connected to the inverted input terminal of the amplifier 201, and the other end is connected, via the respective switches SW211 to SW214, to either the reference voltage Vref1 or to the common voltage Vcom.

公开(公告)号：US06597007B2

公开(公告)日：2003-07-22

申请号：US10005844

申请日：2001-12-07

申请人： Seiichiro Mizuno ,  Akira Kurahashi ,  Izumi Adachi

发明人： Seiichiro Mizuno ,  Akira Kurahashi ,  Izumi Adachi

IPC分类号： G01C306

CPC分类号： G01S17/08 ,  G01C3/06 ,  G01S3/781 ,  G01S7/4912 ,  G01S17/48

摘要： A signal current I1 that is output from output terminal of semiconductor position detection element is converted to a signal voltage V1 by a current/voltage conversion unit and a signal current I2 that is output from output terminal is converted to a signal voltage V2 by a current/voltage conversion unit. Signal voltages V1 and V2 are compared in magnitude by a comparison circuit and a comparison signal is output so that maximum signal Vmax and minimum signal Vmin are selected. In A/D conversion circuit, the A/D conversion range is set using maximum signal Vmax, and minimum signal Vmin is converted to a digital signal and output. The position of beam incidence on semiconductor position detection element is found by incidence position calculating unit using the comparison signal and digital signal.