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1.发明授权公开(公告)号：US08264673B2
公开(公告)日：2012-09-11
申请号：US12666572
申请日：2008-07-02
CPC分类号： H01L27/1464 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L2224/05001 , H01L2224/05124 , H01L2224/05568 , H01L2224/0557 , H01L2224/05624 , H01L2224/16225 , H01L2924/00014
摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
摘要翻译： 作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。 由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合 如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。 如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确 距离测量启用。
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2.发明申请公开(公告)号：US20100201966A1
公开(公告)日：2010-08-12
申请号：US12666572
申请日：2008-07-02
IPC分类号： G01C3/08 , H01L31/12 , H01L27/146
CPC分类号： H01L27/1464 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L2224/05001 , H01L2224/05124 , H01L2224/05568 , H01L2224/0557 , H01L2224/05624 , H01L2224/16225 , H01L2924/00014
摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
摘要翻译： 作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。 由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合 如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。 如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确 距离测量启用。
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3.发明授权公开(公告)号：US08477292B2
公开(公告)日：2013-07-02
申请号：US13585127
申请日：2012-08-14
IPC分类号： G01C3/08
CPC分类号： H01L27/1464 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L2224/05001 , H01L2224/05124 , H01L2224/05568 , H01L2224/0557 , H01L2224/05624 , H01L2224/16225 , H01L2924/00014
摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
摘要翻译： 作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。 由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合 如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。 如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确 距离测量启用。
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4.发明授权公开(公告)号：US08665422B2
公开(公告)日：2014-03-04
申请号：US13585103
申请日：2012-08-14
IPC分类号： G01C3/08
CPC分类号： H01L27/1464 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L2224/05001 , H01L2224/05124 , H01L2224/05568 , H01L2224/0557 , H01L2224/05624 , H01L2224/16225 , H01L2924/00014
摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
摘要翻译： 作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。 由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合 如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。 如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确 距离测量启用。
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公开(公告)号：US20100231891A1
公开(公告)日：2010-09-16
申请号：US12674199
申请日：2008-08-22
CPC分类号： H04N5/2352 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14603 , H04N5/3559 , H04N5/374 , H04N5/37452
摘要： A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials φTX1, φTX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers φBG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier φBG to carriers as a higher output of a background light is detected by a photodetector.
摘要翻译： 一对第一栅电极IGR，IGL设置在半导体衬底100上，使得光敏区SA和一对第一聚集区AR，AL之间的电位TX1和TX2交替地斜坡。 一对第二栅电极IGR，IGL设置在半导体衬底100上，以便控制每个插入在第一存储区域AR，AL和第二累积区域FDR，FDL之间的第一势垒栅的高度，并且增加 通过光电检测器检测作为背景光的较高输出的第一势垒＆amp; BG与载流子的高度。
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公开(公告)号：US08767189B2
公开(公告)日：2014-07-01
申请号：US12674199
申请日：2008-08-22
IPC分类号： G01C3/08
CPC分类号： H04N5/2352 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14603 , H04N5/3559 , H04N5/374 , H04N5/37452
摘要： A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials φTX1, φTX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers φBG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier φBG to carriers as a higher output of a background light is detected by a photodetector.
摘要翻译： 一对第一栅电极IGR，IGL设置在半导体衬底100上，使得光敏区SA和一对第一聚集区AR，AL之间的电位TX1和TX2交替地斜坡。 一对第二栅电极IGR，IGL设置在半导体衬底100上，以便控制每个插入在第一存储区域AR，AL和第二累积区域FDR，FDL之间的第一势垒栅的高度，并且增加 通过光电检测器检测作为背景光的较高输出的第一势垒＆amp; BG与载流子的高度。
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公开(公告)号：US20140327903A1
公开(公告)日：2014-11-06
申请号：US14357817
申请日：2012-08-21
申请人： Mitsuhito Mase , Takashi Suzuki , Jun Hiramitsu
发明人： Mitsuhito Mase , Takashi Suzuki , Jun Hiramitsu
IPC分类号： G01S7/486
CPC分类号： G01S7/4861 , G01S7/4863 , G01S17/89
摘要： In a distance measurement device of an embodiment, a light source emits modulation light in a first charge transfer cycle, and emission of the modulation light of the light source is stopped in a second charge transfer cycle. In each of the first and second charge transfer cycles, the charges generated in a photosensitive region are distributed to a first accumulation region and a second accumulation region. A first value is obtained based on readout values corresponding to amounts of accumulated charges of the first accumulation region. A second value is obtained based on readout values corresponding to amounts of accumulated charges of the second accumulation region. A distance is calculated based on the first value and the second value.
摘要翻译： 在实施例的距离测量装置中，光源在第一电荷转移周期中发射调制光，并且在第二电荷转移周期中停止光源的调制光的发射。 在第一和第二电荷转移循环中的每一个中，在感光区域中产生的电荷被分配到第一累积区域和第二累积区域。 基于与第一累积区域的累积电荷量对应的读出值获得第一值。 基于对应于第二累积区域的累积电荷量的读出值获得第二值。 基于第一值和第二值计算距离。
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公开(公告)号：US08598674B2
公开(公告)日：2013-12-03
申请号：US13498202
申请日：2010-11-18
IPC分类号： H01L27/146 , G01C3/08
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译： 范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。 光栅电极PG设置在表面1FT上。 第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。 第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。
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公开(公告)号：US20130001651A1
公开(公告)日：2013-01-03
申请号：US13634249
申请日：2011-02-22
IPC分类号： H01L31/102
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14643 , H01L31/0236
摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
摘要翻译： 半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。 在外延半导体层中形成感光区域。 至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。 不规则的凹凸光学曝光。
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公开(公告)号：US09134423B2
公开(公告)日：2015-09-15
申请号：US13497350
申请日：2010-10-26
申请人： Takashi Suzuki , Mitsuhito Mase
发明人： Takashi Suzuki , Mitsuhito Mase
IPC分类号： H04N7/18 , G01S17/89 , G01B11/02 , G01B11/00 , G01S17/10 , G01S7/486 , G01S11/12 , H01L27/146
CPC分类号： G01S17/89 , G01B11/002 , G01B11/022 , G01S7/4863 , G01S11/12 , G01S17/10 , H01L27/14603 , H04N7/18
摘要： A photogate electrode PG has first and second sides opposed to each other. First and second semiconductor regions FD1, FD2 are arranged as spatially separated from each other on the side where the first side of the photogate electrode PG exists and along the first side. Third and fourth semiconductor regions FD3, FD4 are arranged as spatially separated from each other on the side where the second side of the photogate electrode PG exists and along the second side. First gate electrodes TX1 are provided between the photogate electrode PG and the first and third semiconductor regions FD1, FD3. Second gate electrodes TX2 are provided between the photogate electrode PG and the second and fourth semiconductor regions FD2, FD4. The first to fourth semiconductor regions FD1-FD4 are formed so as to overlap with respective p-type well regions W1-W4 and so as to be surrounded by the respective well regions W1-W4.
摘要翻译： 光栅电极PG具有彼此相对的第一和第二侧。 第一和第二半导体区域FD1，FD2被布置为在光栅电极PG的第一侧存在并且沿着第一侧在空间上彼此分离。 第三和第四半导体区域FD3，FD4被布置为在光栅电极PG的第二面存在并且沿着第二面在空间上彼此分离。 第一栅电极TX1设置在光栅电极PG与第一和第三半导体区域FD1，FD3之间。 第二栅极TX2设置在光栅电极PG与第二和第四半导体区域FD2，FD4之间。 第一至第四半导体区域FD1-FD4形成为与相应的p型阱区域W1-W4重叠并且被各个阱区域W1-W4包围。
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