公开(公告)号：US20040163944A1

公开(公告)日：2004-08-26

申请号：US10371463

申请日：2003-02-21

发明人： Yury Oshmyansky ,  Sergey Mishin ,  Richard C. Ruby ,  John D. Larson III

IPC分类号： C23C014/34

CPC分类号： H01J37/3444 ,  C23C14/352 ,  H01J37/3408

摘要： A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.

摘要翻译： 磁控管具有用于平滑和连续地调节施加到其目标的直流电力的机构，以补偿目标老化发生的靶的溅射特性的变化。 根据本教导的磁控管包括用于响应于施加到靶的AC电力和DC电力而将膜溅射到晶片上的一组同心靶，以及调节DC功率的功率控制器。 直流功率的调整使得磁控管在其目标的整个寿命期间保持与磁控管形成的膜的厚度的均匀性。

公开(公告)号：US06743341B2

公开(公告)日：2004-06-01

申请号：US10127332

申请日：2002-04-22

申请人： Joachim Szczyrbowski ,  Götz Teschner ,  Jürgen Bruch

发明人： Joachim Szczyrbowski ,  Götz Teschner ,  Jürgen Bruch

IPC分类号： C23C1434

CPC分类号： H01J37/32458 ,  C23C14/0042 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/347

摘要： A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

摘要翻译： 处理气体源（16）连接到真空室（5），并且由真空室（5）和处理气体源（16）之间安装由自动控制器驱动的计量阀（12）。 电位计测量电极通过参考电极或固体取代真空室（5）中的气体与参考气体进行比较，并将信号发送到自动控制单元（14），自动控制单元 包含一个信号放大器。 控制单元然后驱动电源的发生器或处理气体的计量阀。

公开(公告)号：US06740207B2

公开(公告)日：2004-05-25

申请号：US10108666

申请日：2002-03-28

申请人： Andreas Kloeppel ,  Christoph Daube ,  Johannes Stollenwerk ,  Thomas Linz

发明人： Andreas Kloeppel ,  Christoph Daube ,  Johannes Stollenwerk ,  Thomas Linz

IPC分类号： C23C1434

CPC分类号： H01J37/3444 ,  H01J37/34

摘要： Sparking is suppressed during high-frequency sputtering by a high-frequency generator (5) which has a controlled switching unit (13) that is connected upstream in relation to the output of the generator. A high-frequency supply signal that is generated at the output of the high-frequency generator is stopped for plasma discharge (PL) for a short time, by the switching unit.

摘要翻译： 通过高频发生器（5）在高频溅射期间抑制火花，该高频发生器具有相对于发生器的输出端连接到上游的受控切换单元（13）。 在高频发生器的输出处产生的高频电源信号通过开关单元停止等离子体放电（PL）短时间。

公开(公告)号：US06522076B2

公开(公告)日：2003-02-18

申请号：US09817346

申请日：2001-03-27

申请人： Klaus Goedicke ,  Torsten Winkler ,  Michael Jungh{overscore (a)}hnel ,  Karsten Handt ,  Henry Güldner ,  Henrik Wolf ,  Frank Eckholz

发明人： Klaus Goedicke ,  Torsten Winkler ,  Michael Jungh{overscore (a)}hnel ,  Karsten Handt ,  Henry Güldner ,  Henrik Wolf ,  Frank Eckholz

IPC分类号： H05B3126

CPC分类号： H01J37/3444 ,  H01J37/3405 ,  H05H1/46

摘要： Process and control arrangement for introducing pulsing energy introduction into magnetron discharges. The process includes feeding a charge to the electrodes of a magnetron arrangement via a ignition source at a time t0, and, after the feeding of the electric charge, determining an ignition of the magnetron discharge. The process also includes introducing a current, having a predetermined value, from a boost source at a time t1, and, at a time t2, separating the ignition source from the electrodes of the magnetron arrangement. The introduction of the current by the boost source continues for a certain duration tEIN. The process also includes interrupting the introduction of the electric energy for a predetermined time tAUS.

摘要翻译： 将脉冲能量引入磁控管放电的过程和控制布置。 该过程包括在时间t0经由点火源将电荷馈送到磁控管装置的电极，并且在馈送电荷之后，确定磁控管放电的点火。 该过程还包括在时间t1从升压源引入具有预定值的电流，并且在时间t2将点火源与磁控管装置的电极分开。 升压源引入的电流持续一段时间tEIN。 该过程还包括中断电能在预定时间tAUS的引入。

公开(公告)号：US20020158616A1

公开(公告)日：2002-10-31

申请号：US09890814

申请日：2001-11-13

发明人： Dmitri Kovalevski ,  Michael Kishinevsky ,  David J Christie

IPC分类号： G05F001/00

CPC分类号： H02M1/40 ,  H01F27/402 ,  H01F30/06 ,  H01F2019/085 ,  H01J37/3405 ,  H01J37/3444 ,  H02M7/48

摘要： There is provided by this invention an apparatus and method for generating voltage pulses to first and second magnetron devices in a plasma chamber. An isolation transformer is connected to a pulsed DC power supply having a flux sensor, such as a Hall effect sensor, in close proximity to its air gap to monitor the transformer flux. A control circuit is connected to the flux sensor to control the duty cycle of the transformer by controlling the flux of the transformer such that the maximum and minimum peak transformer fluxes are equal in magnitude and opposite in sign to prevent saturation.

摘要翻译： 本发明提供了一种用于向等离子体室中的第一和第二磁控管装置产生电压脉冲的装置和方法。 隔离变压器连接到脉冲直流电源，该脉冲直流电源具有一个通量传感器，如霍尔效应传感器，靠近其气隙，以监控变压器通量。 控制电路连接到磁通传感器，通过控制变压器的磁通量来控制变压器的占空比，使得最大和最小峰值变压器通量的大小相等，符号相反，以防止饱和。

公开(公告)号：US20020157945A1

公开(公告)日：2002-10-31

申请号：US10127332

申请日：2002-04-22

发明人： Joachim Szczyrbowski ,  Gotz Teschner ,  Jurgen Bruch

IPC分类号： C23C014/32

CPC分类号： H01J37/32458 ,  C23C14/0042 ,  H01J37/3408 ,  H01J37/3444 ,  H01J37/347

摘要： A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

摘要翻译： 处理气体源（16）连接到真空室（5），并且由真空室（5）和处理气体源（16）之间安装由自动控制器驱动的计量阀（12）。 电位计测量电极通过参考电极或固体取代真空室（5）中的气体与参考气体进行比较，并将信号发送到自动控制单元（14），自动控制单元 包含一个信号放大器。 控制单元然后驱动电源的发生器或处理气体的计量阀。

公开(公告)号：US20020134671A1

公开(公告)日：2002-09-26

申请号：US09766463

申请日：2001-01-19

发明人： Richard E. Demaray ,  Jesse Shan ,  Kai-An Wang ,  Ravi B. Mullapudi

IPC分类号： C23C014/32

CPC分类号： H01J37/3444 ,  C23C14/14 ,  C23C14/3414 ,  C23C14/35 ,  H01J37/3408

摘要： A specialized physical vapor deposition process provides dense amorphous semiconducting material with exceptionally smooth morphology. In particular, the process provides dense, smooth amorphous silicon useful as a hard mask for etching optical and semiconductor devices and as a high refractive index material in optical devices. DC sputtering of a planar target of intrinsic crystalline semiconducting material in the presence of a sputtering gas under a condition of uniform target erosion is used to deposit amorphous semiconducting material on a substrate. DC power that is modulated by AC power is applied to the target. The process provides dense, smooth amorphous silicon at high deposition rates. A method of patterning a material layer including forming a hard mask layer of amorphous silicon on a material layer according to the present DC sputtering process is also provided. The low average surface roughness of the amorphous silicon hard mask is reflected in the low average surface roughness of the sidewalls of the etched material layer. In addition, a method of forming optical devices in which the DC sputtered amorphous semiconductor materials are used as the high refractive index material is provided.

摘要翻译： 专门的物理气相沉积工艺提供了非常光滑的形态的致密非晶半导体材料。 特别地，该方法提供了可用作蚀刻光学和半导体器件的硬掩模和作为光学器件中的高折射率材料的致密的平滑非晶硅。 在溅射气体存在下，在均匀的目标腐蚀的条件下，使用本征晶体半导体材料的平面靶的DC溅射以在衬底上沉积非晶半导体材料。 通过AC电源调制的直流电力被施加到目标。 该方法以高沉积速率提供致密，平滑的非晶硅。 还提供了根据本发明的DC溅射工艺在材料层上形成包括形成非晶硅的硬掩模层的材料层的方法。 非晶硅硬掩模的低平均表面粗糙度反映在蚀刻材料层的侧壁的低平均表面粗糙度上。 此外，提供了一种形成其中使用DC溅射非晶半导体材料作为高折射率材料的光学器件的方法。

公开(公告)号：US06447655B2

公开(公告)日：2002-09-10

申请号：US09838039

申请日：2001-04-20

申请人： Alexander D. Lantsman

发明人： Alexander D. Lantsman

IPC分类号： C23C1434

CPC分类号： H01J37/3444 ,  C23C14/54 ,  H01J37/34

摘要： DC plasma power supply for a sputter deposition of material layers on a substrate includes a plasma controller and a plasma input for the settings of the output voltage and output current providing plasma ignition and termination with no arcing and no striking voltage. Pre-defined voltages are applied in the vacuum state before sputtering and after sputtering until vacuum is restored in a sputtering apparatus.

摘要翻译： 用于溅射沉积衬底上的材料层的等离子体等离子体电源包括等离子体控制器和用于设置输出电压和输出电流的等离子体输入，其提供等离子体点火和终止，没有电弧并且没有引发电压。 在溅射之前和溅射之后，在真空状态下施加预定电压，直到在溅射装置中恢复真空。

公开(公告)号：US06413382B1

公开(公告)日：2002-07-02

申请号：US09705324

申请日：2000-11-03

申请人： Wei Wang ,  Praburam Gopalraja ,  Jianming Fu ,  Zheng Xu

发明人： Wei Wang ,  Praburam Gopalraja ,  Jianming Fu ,  Zheng Xu

IPC分类号： C23C1435

CPC分类号： H01J37/3444 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.

摘要翻译： 一种磁控溅射反应器，其具有以小于10％且优选小于1％的占空比脉冲的靶，并且还具有面积小于目标区域围绕目标中心旋转的20％的面积的小磁控管，由此非常 在与磁控管区域相邻的脉冲期间产生高等离子体密度。 功率脉冲频率需要与旋转频率不同步，从而磁控管在不同脉冲期间不会覆盖磁控管的相同区域。 有利地，功率脉冲在DC背景水平之上传送足以继续激发等离子体，使得每个脉冲不需要点火。

公开(公告)号：US20020047539A1

公开(公告)日：2002-04-25

申请号：US09817346

申请日：2001-03-27

申请人： Fraunhofer-Gesellschaft zur Foderung derangewandten Forschung e.V.

发明人： Klaus Goedicke ,  Torsten Winkler ,  Michael Junghahnel ,  Karsten Handt ,  Henry Guldner ,  Henrik Wolf ,  Frank Eckholz

IPC分类号： H05B031/26

CPC分类号： H01J37/3444 ,  H01J37/3405 ,  H05H1/46

摘要： Process and control arrangement for introducing pulsing energy introduction into magnetron discharges. The process includes feeding a charge to the electrodes of a magnetron arrangement via a ignition source at a time t0, and, after the feeding of the electric charge, determining an ignition of the magnetron discharge. The process also includes introducing a current, having a predetermined value, from a boost source at a time t1, and, at a time t2, separating the ignition source from the electrodes of the magnetron arrangement. The introduction of the current by the boost source continues for a certain duration tEIN. The process also includes interrupting the introduction of the electric energy for a predetermined time tAUSj.

摘要翻译： 将脉冲能量引入磁控管放电的过程和控制布置。 该过程包括在时间t0经由点火源将电荷馈送到磁控管装置的电极，并且在馈送电荷之后，确定磁控管放电的点火。 该过程还包括在时间t1从升压源引入具有预定值的电流，并且在时间t2将点火源与磁控管装置的电极分开。 升压源引入的电流持续一段时间tEIN。 该过程还包括中断电能在预定时间tAUSj的引入。