公开(公告)号：US11683939B2

公开(公告)日：2023-06-20

申请号：US16396451

申请日：2019-04-26

Applicant: Intel Corporation

Inventor： Benjamin Buford ,  Angeline Smith ,  Noriyuki Sato ,  Tanay Gosavi ,  Kaan Oguz ,  Christopher Wiegand ,  Kevin O'Brien ,  Tofizur Rahman ,  Gary Allen ,  Sasikanth Manipatruni ,  Emily Walker

IPC: H10B61/00 ,  H10N50/10 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

CPC classification number: H10B61/22 ,  H10N50/10 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

Abstract: A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.

公开(公告)号：US20230189663A1

公开(公告)日：2023-06-15

申请号：US18103818

申请日：2023-01-31

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Atsushi TSUMITA

IPC: H10N52/80 ,  G11C11/18 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  G11C11/16

CPC classification number: H10N52/80 ,  G11C11/18 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element, a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.