公开(公告)号：US20070125745A1

公开(公告)日：2007-06-07

申请号：US11296247

申请日：2005-12-07

Applicant: Kanakasabapathi Subramanian ,  Richard Saia ,  Aaron Knobloch ,  David Najewicz ,  Nicholas Okruch

Inventor： Kanakasabapathi Subramanian ,  Richard Saia ,  Aaron Knobloch ,  David Najewicz ,  Nicholas Okruch

IPC: C23F1/00 ,  H01B13/00

CPC classification number: C23C8/40 ,  C23C8/12 ,  F23Q7/22 ,  F24C3/103

Abstract: A method of manufacturing an ignition device is provided. The method includes patterning a plurality of resistors on a membrane to form heating elements and thermally isolating the heating elements from an external environment via a cavity disposed adjacent to the heating elements.

Abstract translation: 提供一种制造点火装置的方法。 该方法包括在膜上图形化多个电阻器以形成加热元件并且通过邻近加热元件设置的空腔将加热元件与外部环境热隔离。

公开(公告)号：US20060289386A1

公开(公告)日：2006-12-28

申请号：US11167719

申请日：2005-06-27

Applicant: Steven Tysoe ,  Steven LeBoeuf ,  Mark D'Evelyn ,  Venkat Venkataramani ,  Vinayak Tilak ,  Jeffrey Fortin ,  Charles Becker ,  Stephen Arthur ,  Samhita Dasgupta ,  Kanakasabapathi Subramanian ,  Robert Wojnarowski ,  Abasifreke Ebong

Inventor： Steven Tysoe ,  Steven LeBoeuf ,  Mark D'Evelyn ,  Venkat Venkataramani ,  Vinayak Tilak ,  Jeffrey Fortin ,  Charles Becker ,  Stephen Arthur ,  Samhita Dasgupta ,  Kanakasabapathi Subramanian ,  Robert Wojnarowski ,  Abasifreke Ebong

IPC: B44C1/22 ,  C09K13/00 ,  G01L9/00

CPC classification number: H01L21/31111

Abstract: An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.

Abstract translation: 提供了包括卤化盐的蚀刻剂，例如Cryolite（Na 3 AlF 6）或四氟硼酸钾（KBF 4 N 4）。 盐可以以足以蚀刻基材的量存在于蚀刻剂中，并且可以具有大于约200摄氏度的熔体温度。 湿蚀刻的方法可以包括使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述支撑层可以包括氧化铝; 或使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述蚀刻剂可以包括冰晶石（Na 3 AlF 6 N），四氟硼酸钾 （KBF 4）或两者; 并蚀刻所述支撑层的至少一部分。 该方法可以提供通过将结晶生长到氧化铝载体层上并通过湿蚀刻化学去除至少一部分载体层而制备的层压体。 提供了包括层压板的电子设备，光学设备或组合设备。

公开(公告)号：US20060137456A1

公开(公告)日：2006-06-29

申请号：US11023202

申请日：2004-12-27

Applicant: Samhita Dasgupta ,  Jeffrey Fortin ,  Steven LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Tysoe

Inventor： Samhita Dasgupta ,  Jeffrey Fortin ,  Steven LeBoeuf ,  Vinayak Tilak ,  Chayan Mitra ,  Kanakasabapathi Subramanian ,  Steven Tysoe

IPC: G01L9/00

CPC classification number: G01H9/00 ,  G01L1/142 ,  G01L1/18 ,  G01L9/0052 ,  G01L9/0073 ,  G01L9/0075 ,  G01L9/008 ,  G01L9/08 ,  G01L19/04

Abstract: A sensor, in accordance with aspects of the present technique, is provided. The sensor comprises a membrane formed of gallium nitride. The membrane is disposed on a substrate, which is wet-etched to form a closed cavity. The membrane exhibits both a capacitive response and a piezo-response to an external stimulus. The sensor further includes a circuit for measuring at least one of the capacitive response or the piezo-response. In certain aspects, the sensor may be operable to measure external stimuli, such as, pressure, force and mechanical vibration.

Abstract translation: 提供了根据本技术方面的传感器。 传感器包括由氮化镓形成的膜。 膜被布置在衬底上，其被湿蚀刻以形成闭合腔。 膜对外部刺激具有电容响应和压电响应。 传感器还包括用于测量电容响应或压电响应中的至少一个的电路。 在某些方面，传感器可操作以测量外部刺激，例如压力，力和机械振动。

公开(公告)号：US07045466B2

公开(公告)日：2006-05-16

申请号：US10607838

申请日：2003-06-27

Applicant: Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

Inventor： Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

IPC: H01L21/302

CPC classification number: B81C1/00626 ,  B81B2201/033 ,  H01L21/3086

Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.

Abstract translation: 通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化，直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物，留下多层结构。 在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。

公开(公告)号：US07021147B1

公开(公告)日：2006-04-04

申请号：US11178128

申请日：2005-07-11

Applicant: Kanakasabapathi Subramanian ,  Donald Joseph Buckley, Jr. ,  Slawomir Rubinsztajn ,  Arun Virupaksha Gowda ,  Stanton Earl Weaver, Jr. ,  Russell William Craddock ,  Deborah Ann Haitko

Inventor： Kanakasabapathi Subramanian ,  Donald Joseph Buckley, Jr. ,  Slawomir Rubinsztajn ,  Arun Virupaksha Gowda ,  Stanton Earl Weaver, Jr. ,  Russell William Craddock ,  Deborah Ann Haitko

IPC: G01L19/04

CPC classification number: G01L19/0645

Abstract: A sensor package and method are described. The sensor package includes an enclosure, a diaphragm coupled to the enclosure. The diaphragm is configured to receive vibrations from an ambient environment. Further, the sensor package includes a pressure sensing element disposed inside the enclosure, and a pressure transfer medium disposed inside the enclosure and proximate the pressure sensing element, where the pressure transfer medium includes a fluid, and a plurality of filler particles suspended in the fluid. The filler particles serve to reduce a coefficient of thermal expansion of the pressure transfer medium.

Abstract translation: 描述传感器封装和方法。 传感器组件包括外壳，连接到外壳的隔膜。 隔膜被配置为从周围环境接收振动。 此外，传感器封装包括设置在外壳内部的压力感测元件和设置在外壳内部并且靠近压力感测元件的压力传感介质，其中压力传递介质包括流体，以及悬浮在流体中的多个填料颗粒 。 填料颗粒用于降低压力传递介质的热膨胀系数。

公开(公告)号：US20060055048A1

公开(公告)日：2006-03-16

申请号：US10938247

申请日：2004-09-13

Applicant: Kanakasabapathi Subramanian ,  Jeffrey Fortin ,  Wei-Cheng Tian

Inventor： Kanakasabapathi Subramanian ,  Jeffrey Fortin ,  Wei-Cheng Tian

IPC: H01L23/48 ,  H01L29/04 ,  H01L29/06

CPC classification number: H01L21/30617 ,  H01L21/76898 ,  H01L23/481 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a silicon wafer. A mask material is provided on the etch stop material and patterned in such a way as to lead to the formation of vias that have at least one pair of opposing side walls that run parallel to a plane in the wafer. A wet etchant, such as potassium hydroxide, is used to etch vias in the wafer. The use of a wet etchant leads to the formation of smooth side walls. This method allows an aspect ratio of height versus width of the vias of greater than 75 to 1.

Abstract translation: 用于形成通过该方法形成的平滑壁，棱镜通孔晶片通孔和制品的方法。 在晶片上提供蚀刻停止材料，晶片可以是<110>硅晶片。 在蚀刻停止材料上提供掩模材料，并以这样的方式图案化，以便导致形成通孔，其具有平行于晶片中的111平面延伸的至少一对相对的侧壁。 使用诸如氢氧化钾的湿蚀刻剂来蚀刻晶片中的通孔。 使用湿蚀刻剂导致形成平滑的侧壁。 该方法允许通孔的高度与宽度的长宽比大于75至1。