Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
    2.
    发明授权
    Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens 有权
    具有无定形含氟聚合物密封剂和透镜的发光二极管(LED)

    公开(公告)号:US06921929B2

    公开(公告)日:2005-07-26

    申请号:US10609040

    申请日:2003-06-27

    摘要: A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die (114) is formed by growing a diode (110) on a substrate layer (115) such as sapphire. The diode die (114) is flipped so that it emits light (160, 365) through the face (150) of the layer (115). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (114), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens (230, 340) of amorphous fluoropolymer may be joined to the encapsulant (220). Additional joined or separate lenses (350) may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.

    摘要翻译: 由用于发光二极管(LED)或二极管激光器(例如紫外线(UV)LED(UVLED))的无定形含氟聚合物制成的透镜和密封剂。 通过在诸如蓝宝石的衬底层(115)上生长二极管(110)来形成半导体二极管管芯(114)。 二极管管芯(114)被翻转,使得它通过层(115)的面(150)发光(160,365)。 无定形氟聚合物密封剂封装二极管管芯(114)的发射面,并且可以被成形为透镜以形成整体的密封剂/透镜。 或者,可以将无定形含氟聚合物的透镜(230,340)接合到密封剂(220)。 还可以使用附加的连接或分开的透镜(350)。 密封剂/透镜对于紫外线以及红外光是透射的。 还提供封装方法。

    Compression paddle membrane and tensioning apparatus for compressing tissue for medical imaging purposes
    3.
    发明授权
    Compression paddle membrane and tensioning apparatus for compressing tissue for medical imaging purposes 有权
    用于压缩组织以用于医学成像目的的压片式膜和张紧装置

    公开(公告)号:US07822457B2

    公开(公告)日:2010-10-26

    申请号:US10723318

    申请日:2003-11-25

    IPC分类号: A61B5/05 A61B6/04

    摘要: Apparatus for compressing tissue to be scanned for medical imaging is provided. The apparatus may comprise a compression membrane and a tensioning apparatus coupled to the membrane to apply a tensile force to the membrane to place the membrane in a taut condition during an imaging process. In one exemplary application that combines ultrasound scanning with X-ray mammography, the compressing apparatus enables accurate, reproducible ultrasound images reducing distortion and attenuation, which may otherwise be introduced as a consequence of such a combination of imaging processes.

    摘要翻译: 提供了用于压缩待扫描医疗成像的组织的装置。 该装置可以包括压缩膜和连接到膜的张紧装置,以在成像过程中将拉力施加到膜以使膜处于紧张状态。 在将超声扫描与X射线乳腺X线照相术组合的一个示例性应用中,压缩装置能够实现精确的,可再现的超声图像,减少失真和衰减,否则可能由于成像过程的组合而被引入。

    Diamond slurry for chemical-mechanical planarization of semiconductor wafers
    5.
    发明授权
    Diamond slurry for chemical-mechanical planarization of semiconductor wafers 有权
    用于半导体晶片化学机械平面化的金刚石浆料

    公开(公告)号:US06258721B1

    公开(公告)日:2001-07-10

    申请号:US09472104

    申请日:1999-12-27

    IPC分类号: H01L21302

    CPC分类号: H01L21/3212 H01L21/02074

    摘要: The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 5 wt-% of an a hydroxyl amine compound, (ii) between about 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 4 and 10, and advantageously about 8.5 pH. The semiconductor wafer then is subjected to CMP using said secondary aqueous slurry. Thereafter, the semiconductor wafer again is subjected to a cleaning operation.

    摘要翻译: Cu的化学 - 机械平面化(CMP)的多阶段过程开始于形成主要含水或非水性(例如,使用醇和酮作为非水性载体)浆料,其从(i)约0至7重量% 的氧化剂,(ii)0至7重量%的螯合剂,(iii)约0至5重量%的表面活性剂,(iv)约0.001至5重量%的具有平均值的金刚石颗粒 颗粒大小基本上不超过约0.4μm,和(v)一定量的pH调节剂,使得含水浆液的pH值在约3至10之间,有利地约为5)。 然后使用初级含水浆料对半导体晶片的Cu进行CMP处理,然后进行清洁操作。 接下来,从(i)约0至5重量%的羟胺化合物,(ii)约0至7重量%的螯合剂,(iii)约0至5重量% - 表面活性剂的%,(iv)约0.001至5重量%的平均粒度基本上不超过约0.4μm的金刚石颗粒,和(v)一定量的pH调节剂,使得水性浆料具有pH 在约4至10之间,并且有利地约8.5 pH。 然后使用所述第二水性浆料对半导体晶片进行CMP。 此后,再次对半导体晶片进行清洁操作。

    Diamond slurry for chemical-mechanical planarization of semiconductor wafers
    6.
    发明授权
    Diamond slurry for chemical-mechanical planarization of semiconductor wafers 有权
    用于半导体晶片化学机械平面化的金刚石浆料

    公开(公告)号:US06242351B1

    公开(公告)日:2001-06-05

    申请号:US09591189

    申请日:2000-06-08

    IPC分类号: H01L21302

    摘要: The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of one or more of a complexing agent or a passivating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 7 wt-% of one or more a complexing agent or a passivating agent, (ii) between about 0 and 5 wt-% of a surfactant, (iii) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (iv) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 4 and 10, and advantageously about 8.5 pH. The semiconductor wafer then is subjected to CMP using said secondary aqueous slurry. Thereafter, the semiconductor wafer again is subjected to a cleaning operation.

    摘要翻译: Cu的化学 - 机械平面化(CMP)的多阶段过程开始于形成主要含水或非水性(例如,使用醇和酮作为非水性载体)浆料,其从(i)约0至7重量% 的氧化剂,(ii)0至7重量%的一种或多种络合剂或钝化剂,(iii)约0至5重量%的表面活性剂,(iv)约0.001至5重量% 具有基本上不超过约0.4μm的平均粒度的重量%金刚石颗粒,和(v)一定量的pH调节剂,使得所述含水浆料的pH为约3至10,并且有利地为约5)。 然后使用初级含水浆料对半导体晶片的Cu进行CMP处理,然后进行清洁操作。 接下来,从(i)约0至7重量%的一种或多种络合剂或钝化剂的二次含水浆料,(ii)约0至5重量%的表面活性剂之间,(iii)介于约 0.001和5重量%的具有基本上不超过约0.4μm的平均粒度的金刚石颗粒,和(iv)一定量的pH调节剂,使得所述含水浆料的pH为约4至10,有利地为约8.5 pH值。 然后使用所述第二水性浆料对半导体晶片进行CMP。 此后,再次对半导体晶片进行清洁操作。