公开(公告)号：US20070086915A1

公开(公告)日：2007-04-19

申请号：US11480068

申请日：2006-06-30

申请人： Steven LeBoeuf ,  Peter Sandvik ,  Radislav Potyrailo

发明人： Steven LeBoeuf ,  Peter Sandvik ,  Radislav Potyrailo

IPC分类号： G01N31/22

CPC分类号： G01N33/54366 ,  G01N21/6428 ,  G01N21/645 ,  G01N33/54373 ,  G01N2021/7786

摘要： An apparatus includes an article and a detector. The article includes a substrate, a faceted structure disposed on the substrate, and a sensor layer disposed on the faceted structure. The faceted structure is disposed on the substrate first surface and itself has a surface. The faceted structure surface has peripheral edge defining a diameter of the faceted structure surface. The sensor layer is disposed on the faceted structure surface. The sensor layer can react or can interact with a target species when the target species is sufficiently proximate to the sensor layer. The sensor layer responds to the reaction or to the interaction in a detectable manner. The detector detects a response to the reaction, or to the interaction, of the target species with the sensor layer.

摘要翻译： 一种装置包括物品和检测器。 该物品包括基底，设置在基底上的刻面结构以及设置在刻面结构上的传感器层。 小面结构设置在基板第一表面上并且本身具有表面。 小面结构表面具有限定小平面结构表面直径的周缘。 传感器层设置在刻面结构表面上。 当目标物种足够靠近传感器层时，传感器层可以与目标物种反应或相互作用。 传感器层以可检测的方式响应于反应或相互作用。 检测器检测到目标物种与传感器层的反应或相互作用的响应。

公开(公告)号：US07179670B2

公开(公告)日：2007-02-20

申请号：US10794935

申请日：2004-03-05

申请人： Bryan S. Shelton ,  Sebastien Libon ,  Hari S. Venugopalan ,  Ivan Eliashevich ,  Stanton E. Weaver, Jr. ,  Chen-Lun Hsing Chen ,  Thomas F. Soules ,  Steven LeBoeuf ,  Stephen Arthur

发明人： Bryan S. Shelton ,  Sebastien Libon ,  Hari S. Venugopalan ,  Ivan Eliashevich ,  Stanton E. Weaver, Jr. ,  Chen-Lun Hsing Chen ,  Thomas F. Soules ,  Steven LeBoeuf ,  Stephen Arthur

IPC分类号： H01L21/00

CPC分类号： H01L33/62 ,  H01L24/81 ,  H01L33/38 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05005 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/3003 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/8321 ,  H01L2224/8323 ,  H01L2224/83815 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).

摘要翻译： 发光二极管（10）具有背面和前侧，具有至少一个n型电极（14）和设置在其上的至少一个p型电极（12），其限定最小电极间隔（d < ）。 接合焊盘层（50）包括至少一个n型接合焊盘（64）和至少一个限定最小接合焊盘间隔（p>焊盘）的p型接合焊盘（62） 大于最小电极分离（d _{电极）。 插入在发光二极管（10）的前侧和接合焊盘层（50）之间的至少一个扇形层（30）包括穿过电介质层的通孔（34,54）的多个导电路径 以在所述至少一个n型电极（14）和所述至少一个n型焊盘（64）之间以及所述至少一个p型电极（12）和所述至少一个p型电极（12）之间提供电连通 一个p型接合焊盘（62）。}

公开(公告)号：US20060071219A1

公开(公告)日：2006-04-06

申请号：US10950029

申请日：2004-09-24

申请人： Robert Wojnarowski ,  Stanton Weaver ,  Abasifreke Ebong ,  Xian An Cao ,  Steven LeBoeuf ,  Larry Rowland ,  Stephen Arthur

发明人： Robert Wojnarowski ,  Stanton Weaver ,  Abasifreke Ebong ,  Xian An Cao ,  Steven LeBoeuf ,  Larry Rowland ,  Stephen Arthur

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L27/153 ,  H01L33/32

摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

公开(公告)号：US20050098095A1

公开(公告)日：2005-05-12

申请号：US11010507

申请日：2004-12-13

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： C30B9/00 ,  H01L33/32 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B7/005 ,  C30B29/403 ,  C30B29/406

摘要： A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.

摘要翻译： 具有至多约5摩尔％的铝，铟及其组合中的至少一种的GaN晶体。 GaN晶体具有至少一个直径大于2mm的晶粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界。

公开(公告)号：US20070228385A1

公开(公告)日：2007-10-04

申请号：US11396027

申请日：2006-04-03

申请人： XianAn Cao ,  Steven Leboeuf ,  Alexei Vertiatchikh

发明人： XianAn Cao ,  Steven Leboeuf ,  Alexei Vertiatchikh

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/14 ,  H01L33/44

摘要： An edge-emitting light emitting diode (EELED) and methods are described. The EELED includes contact layer, a first carrier confinement layer coupled to the contact layer, an active region optically coupled to the first carrier confinement layer. The active region includes an aluminum gallium nitride based material. Further, the EELED includes a second carrier confinement layer coupled to the active region.

摘要翻译： 描述了边缘发光发光二极管（EELED）和方法。 EELED包括接触层，耦合到接触层的第一载流子限制层，光耦合到第一载流子限制层的有源区。 有源区包括氮化铝基材料。 此外，EELED包括耦合到有源区的第二载流子限制层。

公开(公告)号：US20070000330A1

公开(公告)日：2007-01-04

申请号：US11516237

申请日：2006-09-06

申请人： Steven Tysoe ,  Mark D'Evelyn ,  Charles Becker ,  Abasifreke Ebong ,  Stephen Arthur ,  Steven LeBoeuf ,  Robert Wojnarowski ,  Samhita Dasgupta ,  Vinayak Tilak ,  Kanakasabapathi Subramanian ,  Jeffrey Fortin

发明人： Steven Tysoe ,  Mark D'Evelyn ,  Charles Becker ,  Abasifreke Ebong ,  Stephen Arthur ,  Steven LeBoeuf ,  Robert Wojnarowski ,  Samhita Dasgupta ,  Vinayak Tilak ,  Kanakasabapathi Subramanian ,  Jeffrey Fortin

IPC分类号： G01L7/00

CPC分类号： H01L21/31111

摘要： A pressure sensor is provided. The pressure sensor includes a multi-layer laminate comprising a substrate and a semiconductor layer, wherein the substrate comprises single crystal or quasi-single crystal aluminum oxide, and a portion of the substrate that is spaced from a peripheral edge is wet etched to form an inwardly facing sidewall that defines a volume; and a substrate to which the multi-layer laminate is secured. The volume is an enclosed volume further defined by a substrate surface.

摘要翻译： 提供压力传感器。 压力传感器包括多层层压体，其包括基底和半导体层，其中基底包括单晶或准单晶氧化铝，并且与周边边缘间隔开的部分基底被湿蚀刻以形成 限定体积的面向内的侧壁; 以及固定有多层层叠体的基板。 体积是由衬底表面进一步限定的封闭体积。

公开(公告)号：US20050006651A1

公开(公告)日：2005-01-13

申请号：US10609040

申请日：2003-06-27

申请人： Steven LeBoeuf ,  Donald Buckley ,  Stanton Weaver

发明人： Steven LeBoeuf ,  Donald Buckley ,  Stanton Weaver

IPC分类号： H01L33/50 ,  H01L27/15

CPC分类号： H01L33/502 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16225 ,  H05K1/0203 ,  H05K2201/10106

摘要： A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die (114) is formed by growing a diode (110) on a substrate layer (115) such as sapphire. The diode die (114) is flipped so that it emits light (160, 365) through the face (150) of the layer (115). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (114), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens (230, 340) of amorphous fluoropolymer may be joined to the encapsulant (220). Additional joined or separate lenses (350) may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.

摘要翻译： 由用于发光二极管（LED）或二极管激光器（例如紫外线（UV）LED（UVLED））的无定形含氟聚合物制成的透镜和密封剂。 通过在诸如蓝宝石的衬底层（115）上生长二极管（110）来形成半导体二极管管芯（114）。 二极管管芯（114）被翻转，使得它通过层（115）的面（150）发光（160,365）。 无定形氟聚合物密封剂封装二极管管芯（114）的发射面，并且可以被成形为透镜以形成整体的密封剂/透镜。 或者，可以将无定形含氟聚合物的透镜（230,340）接合到密封剂（220）。 还可以使用附加的连接或分开的透镜（350）。 密封剂/透镜对于紫外线以及红外光是透射的。 还提供封装方法。

公开(公告)号：US20080008855A1

公开(公告)日：2008-01-10

申请号：US11621560

申请日：2007-01-09

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： H01F1/40 ,  B32B15/00

CPC分类号： C30B9/00 ,  C30B29/406 ,  H01F1/404 ,  Y10T428/24355

摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.

摘要翻译： 提供了结晶组合物。 结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

公开(公告)号：US20070158785A1

公开(公告)日：2007-07-12

申请号：US11559146

申请日：2006-11-13

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： H01L29/20

CPC分类号： C30B29/406 ,  C30B9/00

摘要： A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.

摘要翻译： 公开了一种包括氮化镓的晶体。 晶体具有至少一个具有至少一个尺寸大于2.75mm的颗粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界 。

公开(公告)号：US20070114557A1

公开(公告)日：2007-05-24

申请号：US11654165

申请日：2007-01-16

申请人： Bryan Shelton ,  Sebastien Libon ,  Hari Venugopalan ,  Ivan Eliashevich ,  Stanton Weaver ,  Chen-Lun Chen ,  Thomas Soules ,  Steven LeBoeuf ,  Stephen Arthur

发明人： Bryan Shelton ,  Sebastien Libon ,  Hari Venugopalan ,  Ivan Eliashevich ,  Stanton Weaver ,  Chen-Lun Chen ,  Thomas Soules ,  Steven LeBoeuf ,  Stephen Arthur

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L24/81 ,  H01L33/38 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05005 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/3003 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/8321 ,  H01L2224/8323 ,  H01L2224/83815 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).