公开(公告)号：US20160313654A1

公开(公告)日：2016-10-27

申请号：US15133866

申请日：2016-04-20

Applicant: ASML Netherlands B.V.

Inventor： Si-Han ZENG ,  Yue-Lin PENG ,  Jen-Yu FANG ,  Arie Jeffrey DEN BOEF ,  Alexander STRAAIJER ,  Ching-Yi HUNG ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

Abstract translation: 公开了用于测量光刻工艺的参数的方法，计算机程序和相关联的装置。 该方法包括以下步骤：获得包括与多个第一结构相关的结构不对称性的测量的第一测量，所述多个测量结构不对称中的每一个对应于测量辐射的不同测量组合和至少第一参数的值 ; 获得与多个目标相关的目标不对称性的多个第二测量值，所述多个测量目标不对称中的每一个对应于所述不同测量组合之一，确定描述所述第一测量和所述第二测量之间的关系的关系函数， 对于每个所述测量组合; 根据所述关系函数确定校正重叠值，所述校正重叠值由于至少所述第一结构中的结构不对称而被校正为结构贡献。

公开(公告)号：US20130215404A1

公开(公告)日：2013-08-22

申请号：US13767769

申请日：2013-02-14

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF

IPC: G01J3/44

CPC classification number: G01J3/4412 ,  G01J3/44 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G02B5/205 ,  G03F7/70591 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7026

Abstract: A spectroscopic scatterometer detects both zero order and higher order radiation diffracted from an illuminated spot on a target grating. The apparatus forms and detects a spectrum of zero order (reflected) radiation, and separately forms and detects a spectrum of the higher order diffracted radiation. Each spectrum is formed using a symmetrical phase grating, so as to form and detect a symmetrical pair of spectra. The pair of spectra can be averaged to obtain a single spectrum with reduced focus sensitivity. Comparing the two spectra can yield information for improving height measurements in a subsequent lithographic step. The target grating is oriented obliquely so that the zero order and higher order radiation emanate from the spot in different planes. Two scatterometers can operate simultaneously, illuminating the target from different oblique directions. A radial transmission filter reduces sidelobes in the spot and reduces product crosstalk.

公开(公告)号：US20130155406A1

公开(公告)日：2013-06-20

申请号：US13676562

申请日：2012-11-14

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF

IPC: G03F7/20

CPC classification number: G01N21/95607 ,  G03F7/7015 ,  G03F7/70633

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract translation: 提供了系统，方法和装置，用于确定衬底上的图案的覆盖层，其中掩模图案限定在衬底上图案顶部上的抗蚀剂层中。 第一光栅设置在第二光栅下方，每个具有与另一光栅基本相同的间距，一起形成复合光栅。 沿着第一水平方向以入射角设置第一照明光束。 测量来自复合光栅的衍射光束的强度。 沿着第二水平方向的入射角设置第二照明光束。 第二水平方向与第一水平方向相反。 测量来自复合光栅的衍射光束的强度。 来自第一照明光束的衍射光束与来自第二照明光束的衍射光束之间的差异线性缩放导致重叠误差。

公开(公告)号：US20130258316A1

公开(公告)日：2013-10-03

申请号：US13898973

申请日：2013-05-21

Applicant: ASML Holding N.V.

Inventor： Arie Jeffrey DEN BOEF ,  Earl William EBERT ,  Harry SEWELL ,  Keith William ANDRESEN ,  Sanjeev Kumar SINGH

IPC: G01B11/14 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G02F1/116 ,  G03F7/70191 ,  G03F9/7065

Abstract: A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

Abstract translation: 光刻设备具有对准系统，其包括被配置为将窄带辐射转换成连续，平坦和宽带辐射的辐射源。 声可调窄带通滤波器将宽带辐射滤波成窄带线偏振辐射。 窄带辐射可以聚焦在晶片的对准目标上，以便能够对准晶片。 在一个实施例中，滤波器被配置为调制由辐射源产生的辐射的强度和波长并且具有多个同时的通带。 辐射源产生具有高空间相干性和低时间相干性的辐射。