Abstract:
A new way of drying and/or wetting a surface, such as a top surface of a substrate, is disclosed which is useful in immersion lithography. The surface is placed under a single phase extractor and a priming liquid is delivered between the single phase extractor and the surface. The single phase extractor is only activated after the priming liquid has been provided between the single phase extractor and the surface. Priming liquid is delivered to the single phase extractor during the whole of the drying and/or wetting process.
Abstract:
A new way of drying and/or wetting a surface, such as a top surface of a substrate, is disclosed which is useful in immersion lithography. The surface is placed under a single phase extractor and a priming liquid is delivered between the single phase extractor and the surface. The single phase extractor is only activated after the priming liquid has been provided between the single phase extractor and the surface. Priming liquid is delivered to the single phase extractor during the whole of the drying and/or wetting process.
Abstract:
A lithographic apparatus comprises an alignment system including a tunable narrow pass-band filter configured to receive a broad-band radiation and to filter the broad-band radiation into narrow-band linearly polarized radiation. The tunable narrow pass-band filter is further configured to modulate an intensity and wavelength of the narrow-band radiation and to provide a plurality of pass-band filters at a same time or nearly the same time. The alignment system further includes a relay and mechanical interface configured to receive the narrow-band radiation and to adjust a profile of the narrow-band radiation based on physical properties of alignment targets on a substrate. The adjusted narrow-band radiation is focused on the alignment targets using a focusing system.
Abstract:
A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
Abstract:
A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.