公开(公告)号：USD449770S1

公开(公告)日：2001-10-30

申请号：US29131201

申请日：2000-10-20

申请人： John Chen

设计人： John Chen

公开(公告)号：USD439489S1

公开(公告)日：2001-03-27

申请号：US29124571

申请日：2000-06-07

申请人： John Chen

设计人： John Chen

公开(公告)号：US4562508A

公开(公告)日：1985-12-31

申请号：US609414

申请日：1984-05-10

申请人： John Chen ,  Chin Huang ,  Nancy D. Graves ,  James E. Hicks

发明人： John Chen ,  Chin Huang ,  Nancy D. Graves ,  James E. Hicks

IPC分类号： H04N3/18 ,  H04N3/20 ,  H02H3/20

CPC分类号： H04N3/20

摘要： A protection circuit for a video display apparatus causes shutdown to occur at substantially the same high voltage level for all fault conditions. The video display apparatus incorporates an SCR regulator and a high voltage transformer tuned to the third harmonic. To counter the effect of shutdown to occur at a higher voltage level for a shorted SCR fault than for other faults, the SCR anode control pulse is processed to provide a signal having different voltage levels for normal SCR operation and shorted SCR operation. The voltage level which occurs during a shorted SCR condition is selected to cause shutdown of the video display apparatus at substantially the same high voltage level as that for other fault conditions.

摘要翻译： 用于视频显示装置的保护电路在所有故障条件下基本上以相同的高电压电平进行关闭。 视频显示装置包括SCR调节器和调谐到三次谐波的高压变压器。 为了防止关断发生在短路SCR故障的较高电压电平下，而不是其他故障，SCR阳极控制脉冲被处理，以提供具有不同电压电平的信号，用于正常的SCR操作和短路SCR操作。 选择在短路SCR条件期间发生的电压电平，使视频显示装置的关闭与其他故障条件基本相同的高电压电平。

公开(公告)号：US09252239B2

公开(公告)日：2016-02-02

申请号：US14292880

申请日：2014-05-31

申请人： Hamza Yilmaz ,  John Chen ,  Daniel Ng ,  Wenjun Li

发明人： Hamza Yilmaz ,  John Chen ,  Daniel Ng ,  Wenjun Li

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40 ,  H01L29/78

CPC分类号： H01L29/4236 ,  H01L21/26586 ,  H01L21/823487 ,  H01L27/0255 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/4975 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/66674 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/872 ,  H01L29/8725

摘要： This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.

摘要翻译： 本发明公开了一种半导体功率器件，其包括设置在半导体衬底的顶表面附近的多个顶部电端子。 顶部电气端子中的每一个包括在半导体衬底的顶表面附近形成为硅化物接触层的端子接触层。 半导体功率器件的沟槽栅极从半导体衬底的顶表面打开，并且每个沟槽栅极包括被配置为硅化物接触层的硅化物层，硅化物层设置在略微低于 半导体衬底的顶表面围绕沟槽栅极。

公开(公告)号：US20150016861A1

公开(公告)日：2015-01-15

申请号：US14094075

申请日：2013-12-02

申请人： Charlene Hsueh-Ling Wong ,  John Chen ,  Chun-Liang Hsia

发明人： Charlene Hsueh-Ling Wong ,  John Chen ,  Chun-Liang Hsia

IPC分类号： A45D40/26 ,  B05C1/00

CPC分类号： A45D40/26 ,  A45D40/00 ,  A45D44/00 ,  A45D44/005 ,  A45D2040/0006

摘要： An automatic coloring device for moving coloring tool along a curve includes a guide-bar, a moving platform, a coloring tool, a first moving member and a second moving member. The moving platform is movably disposed on the guide-bar, and the coloring tool is disposed on the moving platform. The first moving member controls the guide-bar to move along a curve, and the second moving member controls the moving platform to move along the guide-bar. An axle center of the guide-bar penetrates the plane where the curve is disposed.

摘要翻译： 用于沿着曲线移动着色工具的自动着色装置包括导杆，移动平台，着色工具，第一移动构件和第二移动构件。 移动平台可移动地设置在引导杆上，着色工具设置在移动平台上。 第一移动构件控制导杆沿着曲线移动，第二移动构件控制移动平台沿着导杆移动。 引导杆的轴心穿过设置曲线的平面。

公开(公告)号：US20140332844A1

公开(公告)日：2014-11-13

申请号：US13892191

申请日：2013-05-10

申请人： Yongping Ding ,  Lei Zhang ,  Hong Chang ,  Jongoh Kim ,  John Chen

发明人： Yongping Ding ,  Lei Zhang ,  Hong Chang ,  Jongoh Kim ,  John Chen

IPC分类号： H01L21/265 ,  H01L29/78 ,  H01L29/739

CPC分类号： H01L29/78 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/7827

摘要： This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.

摘要翻译： 本发明公开了一种设置在半导体衬底中的半导体功率器件。 半导体功率器件包括多个沟槽，每个沟槽具有沟槽端点，端点侧壁垂直于沟槽的纵向方向并且从顶表面垂直向下延伸到沟槽底表面。 半导体功率器件还包括设置在沟槽底表面下方的沟槽底部掺杂剂区域和沿端点侧壁设置的侧壁掺杂剂区域，其中侧壁掺杂剂区域沿着沟槽的端点侧壁垂直向下延伸以到达沟槽底部掺杂剂区域，并且 将沟槽底部掺杂剂区域拾取到半导体衬底的顶表面。

公开(公告)号：US08843953B1

公开(公告)日：2014-09-23

申请号：US13531575

申请日：2012-06-24

申请人： Niem Dang ,  John Chen ,  David W. Chen

发明人： Niem Dang ,  John Chen ,  David W. Chen

IPC分类号： H04N7/16 ,  H04N21/454

CPC分类号： H04N21/4755 ,  H04N21/43615 ,  H04N21/44204 ,  H04N21/44231 ,  H04N21/44236 ,  H04N21/4542 ,  H04N21/4751

摘要： Methods and apparatus for providing a supervisor such as a parent or guardian with a way to monitor and control the delivery of content, e.g., video and audio programs, to users of devices within a home. Exemplary embodiments include methods and apparatus for operating a home network monitoring device located in a home including detecting delivery of content to one or more users in the home, storing, in the home, portions of content delivered to a first user, presenting some of the stored portions of content to a person responsible for setting content restrictions applicable to the first user, and subjecting further content delivery to the first user via the home network to restrictions established by the person responsible for setting content restrictions applicable to the first user. Some embodiments also detect and report potential attacks, e.g., cyber attacks, on the home network.

摘要翻译： 提供诸如父母或监护人的主管的方法和装置，其具有监视和控制内容（例如视频和音频节目）向家庭内的设备的用户的传送的方式。 示例性实施例包括用于操作位于家庭中的家庭网络监视设备的方法和设备，包括检测向家庭中的一个或多个用户的内容的传送，在家庭中存储传递给第一用户的内容的部分， 将存储的内容部分存储到负责设置适用于第一用户的内容限制的人，以及经由家庭网络将进一步的内容传送给第一用户，以限制由负责设置适用于第一用户的内容限制的人所建立的限制。 一些实施例还检测并报告家庭网络上的潜在攻击，例如网络攻击。

公开(公告)号：US20120292692A1

公开(公告)日：2012-11-22

申请号：US13559502

申请日：2012-07-26

申请人： Yeeheng Lee ,  Yongping Ding ,  John Chen

发明人： Yeeheng Lee ,  Yongping Ding ,  John Chen

IPC分类号： H01L29/786

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/47 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/782

摘要： A power MOSFET device and manufacturing method thereof, includes the steps of selectively depositing a first conductive material in the middle region at the bottom of a contact trench and contacting with light-doped N-type epitaxial layer to form a Schottky junction and depositing a second conductive material at the side wall and bottom corner of the contact trench and contacting with P-type heavy-doped body region to form an ohmic junction. The first and second conductive materials can respectively optimize the performance of the ohmic contact and the Schottky contact without compromise. Meanwhile, the corner of the contact trench is surrounded by P-type heavy-doped region thereby effectively reducing the leakage currents accumulated at the corner of the contact trench.

摘要翻译： 功率MOSFET器件及其制造方法包括以下步骤：在接触沟槽的底部的中间区域选择性地沉积第一导电材料，并与光掺杂的N型外延层接触以形成肖特基结，并沉积第二导电材料 导电材料在接触沟槽的侧壁和底角处并与P型重掺杂体区域接触以形成欧姆结。 第一和第二导电材料可以分别优化欧姆接触和肖特基接触的性能而不折不扣。 同时，接触沟槽的角部被P型重掺杂区域围绕，从而有效地减少了在接触沟槽的拐角处积聚的漏电流。

公开(公告)号：US20120053517A1

公开(公告)日：2012-03-01

申请号：US13289490

申请日：2011-11-04

申请人： John Chen ,  Raed Rizq ,  Kent Harrison ,  Daniel Horn ,  Gordon Kocur ,  Tracee Eidenschink ,  Ben Arcand ,  Derek Sutermeister ,  Jay Rassat ,  Colm McGuiness ,  Wendy Naimark ,  Ruth Cheng

发明人： John Chen ,  Raed Rizq ,  Kent Harrison ,  Daniel Horn ,  Gordon Kocur ,  Tracee Eidenschink ,  Ben Arcand ,  Derek Sutermeister ,  Jay Rassat ,  Colm McGuiness ,  Wendy Naimark ,  Ruth Cheng

IPC分类号： A61M25/10

CPC分类号： A61M25/1029 ,  A61L29/085 ,  A61L29/16 ,  A61L2300/416 ,  A61M25/0045 ,  A61M25/10 ,  A61M2025/0056 ,  A61M2025/1031 ,  A61M2025/105 ,  B29L2009/005 ,  C08L53/02

摘要： Catheter devices having an expandable balloon for delivering a therapeutic agent to a body site. In one aspect, one or more sheaths are disposed around the balloon with the therapeutic agent being disposed within the sheath, being disposed over the sheath, being contained in the space between the sheath and the balloon, or being otherwise associated with the sheath. In another aspect, the balloon includes a micro-electromechanical system (MEMS) for drug delivery.

摘要翻译： 具有用于将治疗剂递送到身体部位的可膨胀气囊的导管装置。 在一个方面，一个或多个护套设置在球囊周围，治疗剂设置在护套内，设置在护套上，被包含在护套和气囊之间的空间中，或者与护套相关联。 另一方面，气囊包括用于药物递送的微机电系统（MEMS）。

公开(公告)号：US08106423B2

公开(公告)日：2012-01-31

申请号：US12145268

申请日：2008-06-24

申请人： Hanming Wu ,  Jiang Zhang ,  John Chen ,  Xian J. Ning

发明人： Hanming Wu ,  Jiang Zhang ,  John Chen ,  Xian J. Ning

IPC分类号： H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636

摘要： A structure using pure silicon dioxide hard marsk for gate pattern. In an embodiment, the present invention provides a partially completed semiconductor integrated circuit device. The device has a semiconductor substrate and a dielectric layer overlying the semiconductor substrate. The device has a gate structure including edges and a substantially pure silicon dioxide mask structure overlying the gate structure. A thickness ranging from about 400 to about 600 Angstroms of the substantially pure silicon dioxide mask structure is included. The device has a dielectric layer forming sidewall spacers on the edges of the gate structure to protect the gate structure including the edges and an exposed portion of the pure silicon dioxide mask structure overlying the gate structure. The device has an epitaxially grown fill material in an etched source region and an etched drain region.

摘要翻译： 一种使用纯二氧化硅硬马尔斯克进行栅极图案的结构。 在一个实施例中，本发明提供了部分完成的半导体集成电路器件。 该器件具有覆盖半导体衬底的半导体衬底和电介质层。 该器件具有包括边缘的栅极结构和覆盖栅极结构的基本上纯的二氧化硅掩模结构。 包括约400至约600埃基本上纯的二氧化硅掩模结构的厚度。 器件具有在栅极结构的边缘上形成侧壁间隔物的电介质层，以保护包括边缘的栅极结构和覆盖栅极结构的纯二氧化硅掩模结构的暴露部分。 该器件在蚀刻源区和蚀刻漏极区中具有外延生长的填充材料。