Three dimensional high aspect ratio micromachining
    104.
    发明授权
    Three dimensional high aspect ratio micromachining 有权
    三维高宽比微加工

    公开(公告)号:US07045466B2

    公开(公告)日:2006-05-16

    申请号:US10607838

    申请日:2003-06-27

    IPC分类号: H01L21/302

    摘要: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.

    摘要翻译: 通过首先形成不同宽度的线或结构的图案,在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化,直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物,留下多层结构。 在一个实施例中,使用多层结构工艺形成高纵横比梳状致动器。

    Method of wet etching vias and articles formed thereby
    106.
    发明申请
    Method of wet etching vias and articles formed thereby 失效
    湿法蚀刻通孔和​​由此形成的制品的方法

    公开(公告)号:US20060055048A1

    公开(公告)日:2006-03-16

    申请号:US10938247

    申请日:2004-09-13

    IPC分类号: H01L23/48 H01L29/04 H01L29/06

    摘要: A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a silicon wafer. A mask material is provided on the etch stop material and patterned in such a way as to lead to the formation of vias that have at least one pair of opposing side walls that run parallel to a plane in the wafer. A wet etchant, such as potassium hydroxide, is used to etch vias in the wafer. The use of a wet etchant leads to the formation of smooth side walls. This method allows an aspect ratio of height versus width of the vias of greater than 75 to 1.

    摘要翻译: 用于形成通过该方法形成的平滑壁,棱镜通孔晶片通孔和制品的方法。 在晶片上提供蚀刻停止材料,晶片可以是<110>硅晶片。 在蚀刻停止材料上提供掩模材料,并以这样的方式图案化,以便导致形成通孔,其具有平行于晶片中的111平面延伸的至少一对相对的侧壁。 使用诸如氢氧化钾的湿蚀刻剂来蚀刻晶片中的通孔。 使用湿蚀刻剂导致形成平滑的侧壁。 该方法允许通孔的高度与宽度的长宽比大于75至1。