公开(公告)号：US09818956B2

公开(公告)日：2017-11-14

申请号：US14931413

申请日：2015-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Takkyun Ro ,  Seon-Jeong Lim ,  Kyung Bae Park ,  Sung Young Yun ,  Gae Hwang Lee ,  Dong-Seok Leem ,  Yong Wan Jin ,  Yagi Tadao ,  Moon Gyu Han ,  Chuljoon Heo

IPC: H01L51/00 ,  C09B47/00 ,  C09B57/00 ,  C07D333/36 ,  H01L51/42 ,  H01L51/44 ,  H01L27/30

CPC classification number: H01L51/0061 ,  C07D333/36 ,  C09B47/00 ,  C09B57/008 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/008 ,  H01L51/4253 ,  H01L51/4293 ,  H01L51/447 ,  H01L2251/308

Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including the compound represented by Chemical Formula 1.

公开(公告)号：US09761627B2

公开(公告)日：2017-09-12

申请号：US15143909

申请日：2016-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Wan Jin ,  Kyu Sik Kim ,  Kyung Bae Park ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Deukseok Chung

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

公开(公告)号：US09748295B2

公开(公告)日：2017-08-29

申请号：US15155658

申请日：2016-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Hee Lee ,  Gae Hwang Lee ,  Sung Young Yun ,  Dong-Seok Leem ,  Xavier Bulliard ,  Yong Wan Jin

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685

Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

公开(公告)号：US09673259B2

公开(公告)日：2017-06-06

申请号：US14604185

申请日：2015-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Satoh Ryuichi ,  Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Yong Wan Jin ,  Tadao Yagi ,  Chul Joon Heo

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44 ,  H01L25/16 ,  H01L33/06

CPC classification number: H01L27/307 ,  H01L25/167 ,  H01L27/30 ,  H01L27/302 ,  H01L33/06 ,  H01L51/0046 ,  H01L51/0068 ,  H01L51/008 ,  H01L51/0094 ,  H01L51/424 ,  H01L51/4246 ,  H01L51/4253 ,  H01L51/44 ,  H01L51/442 ,  H01L51/447 ,  Y02E10/549

Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

公开(公告)号：US09666810B2

公开(公告)日：2017-05-30

申请号：US14682534

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Young Yun ,  Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Yong Wan Jin ,  Tadao Yagi

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42

CPC classification number: H01L51/006 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/008 ,  H01L51/0094 ,  H01L51/4253 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor compound and an n-type semiconductor compound, and the organic photoelectric device satisfies Equation 1, and has external quantum efficiency (EQE) of greater than or equal to about 40% at −3 V.

公开(公告)号：US20170141149A1

公开(公告)日：2017-05-18

申请号：US15155658

申请日：2016-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Hee LEE ,  Gae Hwang Lee ,  Sung Young Yun ,  Dong-Seok Leem ,  Xavier Bulliard ,  Yong Wan Jin

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685

Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

公开(公告)号：US09608212B2

公开(公告)日：2017-03-28

申请号：US14798984

申请日：2015-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Satoko Ishibe ,  Moon Gyu Han ,  Dong-Seok Leem ,  Kwang Hee Lee ,  Yong Wan Jin ,  Yeong Suk Choi

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/42

CPC classification number: H01L51/008 ,  H01L51/0059 ,  H01L51/4253

Abstract: Organic photoelectric devices, image sensors, and electronic device, include a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound including a squaraine derivative and an n-type semiconductor compound represented by Chemical Formula 1.

公开(公告)号：US09515126B2

公开(公告)日：2016-12-06

申请号：US14657506

申请日：2015-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Kwang Hee Lee ,  Kyung Bae Park ,  Sung Young Yun ,  Yong Wan Jin ,  Chul Joon Heo

IPC: H01L29/08 ,  H01L27/30 ,  H01L27/146

CPC classification number: H01L27/307 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14665 ,  Y02E10/549

Abstract: A photoelectric conversion device of an image sensor includes a first transparent electrode layer, an active layer, and a second transparent electrode layer, which are sequentially stacked. A light having a wavelength of about 440 nm-480 nm is absorbed within a depth of about ⅕ of an entire thickness of the active layer from both the top and bottom surfaces of the active layer.

Abstract translation: 图像传感器的光电转换装置包括依次堆叠的第一透明电极层，有源层和第二透明电极层。 具有约440nm-480nm的波长的光在有源层的顶表面和底表面的活性层的整个厚度的大约⅕的深度内被吸收。

公开(公告)号：US09090817B2

公开(公告)日：2015-07-28

申请号：US14181500

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Eun Joo Jang ,  Mi Yang Kim ,  Hyung Kun Kim ,  Shin Ae Jun ,  Yong Wan Jin ,  Seong Jae Choi

IPC: H01L33/06 ,  C09K11/02 ,  B82Y10/00 ,  C09K11/56 ,  C09K11/88 ,  H01L29/12 ,  H01L33/50

CPC classification number: C09K11/025 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/127 ,  H01L33/06 ,  H01L33/502 ,  H01L33/507 ,  H01L33/56 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/95

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract translation: 这里公开了用于发光二极管的量子点荧光体，其包括量子点和其上支撑量子点的固体基板。 另外，提供了制备量子点荧光体的方法。 由于本发明的量子点荧光体由支撑在固体基板上的量子点组成，所以当分配通过将量子点与用于封装发光二极管的糊状树脂所获得的糊剂分配时，量子点不会聚集 。 由此，可以制造能够保持发光效率优异的发光二极管。

公开(公告)号：US11997856B2

公开(公告)日：2024-05-28

申请号：US17306116

申请日：2021-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Takkyun Ro ,  Kiyohiko Tsutsumi ,  Chul Joon Heo ,  Yong Wan Jin

IPC: H01L27/146 ,  H10K30/10 ,  H10K30/81 ,  H10K39/32 ,  H10K85/20 ,  H10K85/60 ,  H10K30/30 ,  H10K30/57 ,  H10K102/10

CPC classification number: H10K30/10 ,  H01L27/14647 ,  H01L27/14665 ,  H10K30/81 ,  H10K39/32 ,  H10K85/211 ,  H10K85/636 ,  H10K85/657 ,  H01L27/14621 ,  H10K30/30 ,  H10K30/57 ,  H10K85/633 ,  H10K85/652 ,  H10K85/6572 ,  H10K85/6576 ,  H10K2102/103

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.