公开(公告)号：US06232191B1

公开(公告)日：2001-05-15

申请号：US09133718

申请日：1998-08-13

申请人： Nanseng Jeng ,  Christophe Pierrat

发明人： Nanseng Jeng ,  Christophe Pierrat

IPC分类号： H01L2100

CPC分类号： H01L29/6659 ,  H01L21/0337

摘要： This invention teaches methods and apparatus for forming self-aligned photosensitive material spacers about protruding structures in semiconductor devices. One embodiment of the invention is a method for forming a LDD structure, utilizing disposable photosensitive material spacers. A second embodiment of the invention comprises a method for forming a transistor, having salicided source/drain regions, utilizing photosensitive polyimide spacers for forming the salicided source/drain regions, without disposing of the spacers. A third embodiment of the invention comprises a method for creating an offset from a protruding structure on a semiconductor substrate, using disposable photosensitive material spacers.

公开(公告)号：US06225174B1

公开(公告)日：2001-05-01

申请号：US08661795

申请日：1996-06-13

申请人： Nanseng Jeng ,  Christophe Pierrat

发明人： Nanseng Jeng ,  Christophe Pierrat

IPC分类号： G03C516

CPC分类号： H01L29/6659 ,  H01L21/0337

摘要： This invention teaches methods and apparatus for forming self-aligned photosensitive material spacers about protruding structures in semiconductor devices. One embodiment of the invention is a method for forming a lightly doped drain (LDD) structure, utilizing disposable photosensitive material spacers. A second embodiment of the invention comprises a method for forming a transistor, having salicided source/drain regions, utilizing photosensitive polyimide spacers for forming the salicided source/drain regions, without disposing of the spacers. A third embodiment of the invention comprises a method for creating an offset from a protruding structure on a semiconductor substrate, using disposable photosensitive material spacers.

摘要翻译： 本发明教导了用于在半导体器件中形成围绕突出结构的自对准感光材料间隔物的方法和装置。 本发明的一个实施例是一种利用一次性感光材料间隔物形成轻掺杂漏极（LDD）结构的方法。 本发明的第二实施例包括一种用于形成具有水银源/漏区的晶体管的方法，利用光敏聚酰亚胺间隔物形成水银源/漏区，而不处理间隔物。 本发明的第三实施例包括使用一次性感光材料间隔件从半导体衬底上的突出结构产生偏移的方法。

公开(公告)号：US6136480A

公开(公告)日：2000-10-24

申请号：US301273

申请日：1999-04-27

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/30 ,  G03F7/00 ,  G03F7/40 ,  G03F9/00

CPC分类号： G03F7/0035 ,  G03F1/30 ,  G03F7/40

摘要： A method for fabricating photomasks including forming a resist layer located over a substrate, and heating the substrate at a temperature greater than the glass transition temperature of the resist, such that the resist layer flows. In this manner, defects such as pinholes within the resist layer are reduced.

摘要翻译： 一种用于制造光掩模的方法，包括形成位于衬底上的抗蚀剂层，并且在大于抗蚀剂的玻璃化转变温度的温度下加热衬底，使得抗蚀剂层流动。 以这种方式，抗蚀剂层内的针孔等缺陷减少。

公开(公告)号：US6106979A

公开(公告)日：2000-08-22

申请号：US595

申请日：1997-12-30

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/00 ,  G03F1/32 ,  G03F9/00

CPC分类号： G03F1/32

摘要： An improved photolithographic method employs a pattern of subresolution openings to enhance the printability of clear-field patterns. Incorporating a subresolution opening along the edges of the transmission areas prevents the printing of side lobe light and enables incorporation of a positive bias in the clear-field pattern. This in turn increases the lithographic process latitudes. The photomask must be significantly overexposed as a result of using a positive bias. To compensate for the impact of increased exposure on large transmission areas and avoid degradation of the corresponding resist, a pattern of subresolution openings is incorporated in the large transmission areas. The size and orientation of the subresolution areas creates a diffraction grating effect, reducing the exposure of the area under each transmission area.

摘要翻译： 改进的光刻方法采用分解开口的图案以增强清晰场图案的可印刷性。 沿着透射区域的边缘并入分解开口防止了旁瓣光的打印，并且能够在清晰场图案中并入正偏压。 这反过来又增加了光刻工艺的纬度。 作为使用正偏压的结果，光掩模必须显着过度曝光。 为了补偿在大的透射区域增加曝光的影响并避免相应的抗蚀剂的劣化，在大透射区域中并入有一个分层开口的图案。 分解区域的尺寸和方向产生衍射光栅效应，减少了每个透射区域下的面积的曝光。

公开(公告)号：US6042973A

公开(公告)日：2000-03-28

申请号：US370833

申请日：1999-08-09

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F7/00 ,  G03F9/00

CPC分类号： G03F7/001 ,  G03F1/26 ,  G03F1/32

摘要： A subresolution grating composed of approximately circular contacts is fabricated around the border of the primary pattern of a photomask. As a result, resolution at the edges of the photomask pattern is improved when the pattern is printed on a wafer surface. In addition, the reduced leakage enables a more efficient use of the glass plate on which the photomask is fabricated as well as a more efficient use of the wafer surface as a result of being able to place patterns closer together.

公开(公告)号：US6023328A

公开(公告)日：2000-02-08

申请号：US27977

申请日：1998-02-23

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G01N21/956 ,  G01N21/88

CPC分类号： G01N21/95607

摘要： A method and apparatus for inspection of masks is disclosed herein. The method comprises exposing a wafer at a large magnification, while maintaining the same intensity profile obtain at standard exposure magnifications. The enlargened image exposed on a wafer is then examined for defects. The apparatus for inspecting masks includes an illumination system, an optical imaging system, and a detecting device. During inspection of the wafer, the enlarged image on the wafer is examined for defects. In evaluating potential defects, an exposed die is compared with another exposed die to determine the location of the defect on the mask. Alternatively, the examination of the image can occur with respect to a pattern of the image on a design database.

摘要翻译： 本文公开了一种用于检查掩模的方法和装置。 该方法包括以大的放大倍率曝光晶片，同时保持在标准曝光放大率下获得的相同的强度分布。 然后检查暴露在晶片上的放大图像的缺陷。 用于检查掩模的装置包括照明系统，光学成像系统和检测装置。 在检查晶片期间，检查晶片上的放大图像的缺陷。 在评估潜在缺陷时，将暴露的裸片与另一个裸露的裸片进行比较，以确定缺陷在掩模上的位置。 或者，对图像的检查可以相对于设计数据库上的图像的图案进行。

公开(公告)号：US5962174A

公开(公告)日：1999-10-05

申请号：US23751

申请日：1998-02-13

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F9/00

CPC分类号： G03F1/26

摘要： The present invention is a multi layer reflective mask, and a method of fabricating the same, wherein the mask comprises a planar substrate, and a plurality of polished optically reflective regions fabricated on the substrate in an alternating pattern such that the top surface of the reflective regions are substantially co-planar. Each region has a defined phase shift and reflectivity, such that the optical properties of each region are independent of the respective height/thickness of the reflective materials applied to the substrate. Thus, normal planarization procedures performed to the top surface of the reflective regions are sufficient to obtain the optical characteristics of the mask, instead of having to perform a controlled etching process on the substrate to establish specific thicknesses of the reflective materials for defining the desired optical characteristics.

摘要翻译： 本发明是一种多层反射掩模及其制造方法，其中掩模包括平面基板和以交替图案制造在基板上的多个抛光光学反射区域，使得反射层的顶表面 区域基本上是共面的。 每个区域具有限定的相移和反射率，使得每个区域的光学性质独立于施加到衬底的反射材料的相应高度/厚度。 因此，对反射区域的顶表面执行的正常平坦化处理足以获得掩模的光学特性，而不必对基板执行受控蚀刻工艺，以建立用于限定所需光学器件的反射材料的特定厚度 特点

公开(公告)号：US5935734A

公开(公告)日：1999-08-10

申请号：US796650

申请日：1997-03-03

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/30 ,  G03F7/00 ,  G03F7/40 ,  G03F1/08

CPC分类号： G03F7/0035 ,  G03F1/30 ,  G03F7/40

摘要： A method for fabricating photomasks including forming a resist layer located over a substrate, and heating the substrate at a temperature greater than the glass transition temperature of the resist, such that the resist layer flows. In this manner, defects such as pinholes within the resist layer are reduced.

公开(公告)号：US5885734A

公开(公告)日：1999-03-23

申请号：US689932

申请日：1996-08-15

申请人： Christophe Pierrat ,  Chin Aik Le

发明人： Christophe Pierrat ,  Chin Aik Le

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/36 ,  G03F9/00 ,  H01J37/302

CPC分类号： G03F1/26 ,  G03F1/36

摘要： A binary mask layout design arranged hierarchically to include a plurality of levels is modified to include optical proximity effect corrections or phase shifting layers. This is accomplished by beginning at the lowest level of the hierarchy and modifying elements or cells in the design. Any modifications that are uniform to corresponding cells throughout the level are placed in the same level in the hierarchy. Any modifications that apply only to selected cells in the level are placed in a higher level in the hierarchy. The process is repeated for all levels in the hierarchy.

摘要翻译： 分层布置以包括多个级别的二进制掩模布局设计被修改为包括光学邻近效应校正或相移层。 这是通过从层次结构的最底层开始并修改设计中的元素或单元来实现的。 对整个级别的相应单元格均匀的任何修改都将放置在层次结构中的相同级别中。 仅适用于级别中所选单元格的任何修改都将放置在层次结构中的较高级别中。 对于层次结构中的所有级别重复该过程。

公开(公告)号：US5851704A

公开(公告)日：1998-12-22

申请号：US762540

申请日：1996-12-09

申请人： Christophe Pierrat

发明人： Christophe Pierrat

IPC分类号： G03F1/28 ,  G03F9/00

CPC分类号： G03F1/28

摘要： The present invention provides a method and apparatus of fabricating photomasks. The photomasks may be fabricated from a photomask blank structure having multiple layers. Upon patterning of these multiple layers by standard photolithographic processes, a photomask is created which is capable of phase-shifting incident light by various degrees, which may be 0.degree., 60.degree., 120.degree., and 180.degree..