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公开(公告)号：US5182758A
公开(公告)日：1993-01-26
申请号：US802118
申请日：1991-12-04
CPC分类号： H01S5/1228 , H01S5/227 , H01S5/2201 , H01S5/32308
摘要： A periodic gain-type semiconductor laser device in which a mesa stripe has wide portions and narrow portions alternately arranged with a period that is an integral multiple of the half-wavelength of the emitted light. A multilayer structure including an n-AlGaAs first cladding layer 103 and an AlGaAs non-doped active layer 104 formed on the mesa stripe also have wide portions and narrow portions. An n-AlGaAs current confining layer 106 covers the sides of the AlGaAs non-doped active layer 104. The height of the top surface of the n-AlGaAs current confining layer 106 matches the height of the AlGaAs non-doped active layer 104. A p-AlGaAs second cladding layer 105 is formed on the AlGaAs non-doped active layer 104 and the current confining layer 106. A driving current is not injected into the narrow portions of the AlGaAs non-doped active layer 104.
摘要翻译： 一种周期性增益型半导体激光装置，其中台面条具有宽的部分，并且窄周期以发射的光的半波长的整数倍的周期交替布置。 包括形成在台面条上的n-AlGaAs第一包层103和AlGaAs非掺杂有源层104的多层结构也具有宽部分和窄部分。 n-AlGaAs电流限制层106覆盖AlGaAs非掺杂有源层104的侧面.n-AlGaAs电流限制层106的顶表面的高度与AlGaAs非掺杂有源层104的高度匹配。 在AlGaAs非掺杂有源层104和电流限制层106上形成p-AlGaAs第二包层105.驱动电流不被注入到AlGaAs非掺杂有源层104的窄部分中。
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公开(公告)号：US4901328A
公开(公告)日：1990-02-13
申请号：US380745
申请日：1989-07-17
CPC分类号： H01S5/24 , H01S5/028 , H01S5/1039 , H01S5/20
摘要： A V-channeled substrate inner strip (VSIS) semiconductor laser includes a p-Ga.sub.1-31 y Al.sub.y As active layer sandwiched between a P-Ga.sub.1-x Al.sub.x As first cladding layer and an n-Ga.sub.1-x Al.sub.x As second cladding layer. The AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52 in order to minimize the mode competition noise at an operating temperature. In a preferred form, the cavity length is longer than 300 .mu.m so as to minimize the occurrence of the mode competition noise at the operating temperature. Furthermore, the reflectivity R.sub.1 of the front facet and the reflectivity R.sub.2 of the rear facet are selected to satisfy the condition 0.1.ltoreq.ln(1/R.sub.1 .multidot.R.sub.2).ltoreq.1.
摘要翻译： V沟道衬底内条（VSIS）半导体激光器包括夹在P-Ga1-xAlxAs第一包层和n-Ga1-xAlxAs第二覆层之间的p-Ga1-31 yAlyAs有源层。 第一和第二包覆层的AlAs摩尔分数x在约0.45和0.52之间选择，以便使工作温度下的模式竞争噪声最小化。 在优选的形式中，空腔长度大于300μm，以便在工作温度下最小化模式竞争噪声的发生。 此外，选择前面的反射率R1和后面的反射率R2以满足条件0.1
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公开(公告)号：US4856015A
公开(公告)日：1989-08-08
申请号：US203469
申请日：1988-06-07
CPC分类号： H01S5/02461 , H01L24/32 , H01S5/02 , H01S5/4068 , H01L2924/12042
摘要： A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.
摘要翻译： 半导体激光器阵列器件具有相当宽的发光面积，具有许多半导体激光器和相对于发光区域的周边区域选择性地布置的屏蔽层，使得来自中心部分的热发射速率可以相对于 来自周边地区。 因此，在相位同步状态下，可以使发光区域的温度分布均匀，从整个激光发射区域发射激光。
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公开(公告)号：US4853936A
公开(公告)日：1989-08-01
申请号：US181016
申请日：1988-04-13
申请人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
CPC分类号： H01S5/10 , H01S5/24 , H01S5/1064
摘要： An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.
摘要翻译： 一种折射率引导半导体激光器件，包括有源层中的带状光波导，波导的至少一部分在波导和波导外侧之间的界面处具有连续的凹陷，从而仅仅是高阶横模的激光 从波导辐射到波导的外部，并且只有基本横向模式的激光在波导内传播。
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公开(公告)号：US4813051A
公开(公告)日：1989-03-14
申请号：US5056
申请日：1987-01-20
CPC分类号： H01S5/4068 , H01S5/22
摘要： A semiconductor laser array device comprising an active waveguide extending from one light-emitting facet to the other light-emitting facet, wherein said active waveguide is composed of a single main portion extending in the oscillation direction from said one light-emitting facet and constituting a loss waveguide, and a plurality of parallel branching portions extending from the end of said main portion to said other light-emitting facet and constituting a real index waveguide.
摘要翻译： 一种半导体激光器阵列器件，包括从一个发光小面延伸到另一个发光小面的有源波导，其中所述有源波导由从所述一个发光小面在振荡方向上延伸的单个主要部分构成， 损耗波导和从所述主要部分的端部延伸到所述另一个发光小面并且构成实际折射率波导的多个平行分支部分。
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公开(公告)号：US4780175A
公开(公告)日：1988-10-25
申请号：US113003
申请日：1987-10-26
CPC分类号： G02B6/4249 , G02B5/1871 , H01S5/005 , H01S5/02248
摘要： A method for the production of an optical phase-shifting board comprising laying two or more layer-elements with different etching rates therebetween upon a substrate and then subjecting the substrate to an etching treatment so as to remove given portions of the layer-element with the highest etching rate that is disposed on the top of the layer-elements, resulting in the optical phase-shifting board, and a method for the fixation of the optical phase-shifting board to the stem comprising disposing molten light-sensitive or thermosetting resin in or on a guiding rail of the stem positioned in front of the light-emitting face of a semiconductor laser device, placing the optical phase-shifting board in or on the guiding rail of the stem, sliding the optical phase-shifting board in or on the guiding rail along the guiding rail while the far-field pattern of the semiconductor laser device is being monitored, stopping the sliding of the optical phase-shifting board in or on the guiding rail at the position where the far-field pattern conforms to a desired pattern, and curing the molten resin in or on the guiding rail to fix the optical phase-shifting board to the stem at said position.
摘要翻译： 一种用于制造光学相移板的方法，包括在衬底上铺设两个或更多个具有不同蚀刻速率的层元件，然后对衬底进行蚀刻处理，以便除去所述层元件的给定部分， 设置在层元件顶部的最高蚀刻速率，产生光学相移板，以及用于将光学相变板固定到杆的方法，包括将熔融的光敏或热固性树脂置于 或者在位于半导体激光装置的发光面前方的杆的导轨上，将光学相移板放置在杆的导轨中或导杆上，将光学相移板滑入或插入 沿着导轨的导轨，同时监视半导体激光装置的远场图案，停止光导相移板在导轨中或导轨上的滑动 在远场图案符合期望图案的位置处，并且使导轨内或上的熔融树脂固化，以将光学相变板固定在所述位置处的杆上。
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公开(公告)号：US4764937A
公开(公告)日：1988-08-16
申请号：US893226
申请日：1986-08-05
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device comprising two or more array portions, which are composed of a plurality of main parallel waveguides with an optical phase coupling in between, and one or more branching portions, each of which is positioned between the array portions and which are composed of two branching waveguides branching symmetrically with regard to the main waveguide direction from each of the main parallel waveguides of the array portions, each of the two branching waveguides positioned at the outer sides of each of the branching portions being disconnected with the adjacent branching waveguides and the other branching waveguides from the main parallel waveguides of one of the array portions being optically connected with the corresponding branching waveguides from the main parallel waveguides of the adjacent array portion.
摘要翻译： 一种半导体激光器阵列器件，包括两个或更多个阵列部分，所述阵列部分由多个主平行波导组成，所述多个主平行波导之间具有光学相位耦合，以及一个或多个分支部分，每个分支部分位于阵列部分之间， 从阵列部分的每个主平行波导相对于主波导方向对称地分支的两个分支波导，位于每个分支部分的外侧的两个分支波导中的每一个分别与相邻的分支波导断开， 来自阵列部分之一的主平行波导的其它分支波导与相邻阵列部分的主平行波导的相应分支波导光学连接。
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公开(公告)号：US4751709A
公开(公告)日：1988-06-14
申请号：US893224
申请日：1986-08-05
CPC分类号： H01S5/4031 , H01S5/4068
摘要： A semiconductor laser array device comprising a plurality of waveguides in a parallel manner to achieve an optical phase coupling therebetween within an active layer, wherein said device includes a region composed of a plurality of waveguide portions in the direction vertical to the waveguide direction, the effective refractive indexes of which are alternately different, whereby optical waves passing through said region attain a 180.degree. phase shift between the waveguide portions having different effective refractive indexes.
摘要翻译： 一种半导体激光器阵列器件，其以并行方式包括多个波导，以在有源层内实现光学相位耦合，其中所述器件包括在垂直于波导方向的方向上由多个波导部分组成的区域，有效 其折射率交替不同，从而通过所述区域的光波在具有不同有效折射率的波导部分之间达到180°相移。
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