公开(公告)号：US20030073381A1

公开(公告)日：2003-04-17

申请号：US09975450

申请日：2001-10-11

Applicant: SpeedFam-IPEC Corporation

Inventor： Daniel S. Mallery ,  Sean S. Logan ,  James F. Lee

IPC: B24B049/00 ,  B24B051/00 ,  B24B005/00

CPC classification number: H01L21/6838 ,  B24B37/30 ,  B24B37/32 ,  B24B49/16 ,  H01L21/67253

Abstract: A carrier with adjustable pressure zones and adjustable barriers between zones for distributing the pressure on the backside of a wafer. The pressure zones may be created using an elastic web diaphragm. One or more grooves are formed in the surface of the diaphragm to relieve vacuum formed between the diaphragm and wafer.

Abstract translation: 具有可调节压力区域和区域之间可调节隔板的载体，用于在晶片的背面分配压力。 可以使用弹性腹板隔膜来产生压力区域。 在隔膜的表面中形成一个或多个凹槽以减轻隔膜和晶片之间形成的真空。

公开(公告)号：US20030054729A1

公开(公告)日：2003-03-20

申请号：US10230970

申请日：2002-08-29

Inventor： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

Abstract: Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

公开(公告)号：US20030045211A1

公开(公告)日：2003-03-06

申请号：US10211750

申请日：2002-08-02

Inventor： Christoph Kuebler

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B49/006 ,  B24B13/02 ,  B24B41/04 ,  B24B45/00 ,  B24B47/10 ,  B24B49/16

Abstract: A polishing head for polishing machines, in particular for polishing optical surfaces, has a polishing plate that is connected to a rotationally drivable drive shaft. The polishing plate is articulated to, and rotates with, the drive shaft. A ball hexagonal socket joint provides the articulated connection. Rotating by means of the articulated connection, the polishing plate can follow the surface of the workpiece to be processed, so that the polishing covering on the polishing plate always rests on a maximally large area on the surface of the workpiece.

公开(公告)号：US20030045206A1

公开(公告)日：2003-03-06

申请号：US09944983

申请日：2001-08-30

Applicant: Micron Technology, Inc.

Inventor： Paul A. Farrar

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/105 ,  B24B37/042 ,  B24B37/20 ,  B24B37/245 ,  B24B37/30 ,  B24B53/017 ,  B24D13/12

Abstract: Chemical mechanical polishing (CMP) systems and methods are provided herein. One aspect of the present subject matter is a polishing system. One polishing system embodiment includes a platen adapted to receive a wafer, and a polishing pad drum that has a cylindrical, or generally cylindrical, shape with a length and an axis of rotation along the length. The polishing pad drum is adapted to rotate about the axis of rotation along the drum length. The polishing pad drum, the platen, or both the polishing pad drum and the platen are adapted to be linearly moved to polish the surface of the wafer using the rotating polishing pad drum. The polishing pad drum and the platen are adapted to be operably positioned a predetermined minimum distance from each other as the polishing pad drum and the platen pass each other due the linear motion.

Abstract translation: 本文提供化学机械抛光（CMP）系统和方法。 本主题的一个方面是抛光系统。 一个抛光系统实施例包括适于接收晶片的压板和具有圆柱形或大致圆柱形的具有沿长度的长度和旋转轴线的形状的抛光垫鼓。 抛光垫鼓适于围绕滚筒长度的旋转轴线旋转。 抛光垫鼓，压板或者抛光垫鼓和压板两者都适于线性移动，以使用旋转的抛光垫鼓来抛光晶片的表面。 抛光垫鼓和压板适于可操作地定位成彼此相隔预定的最小距离，因为抛光垫鼓和压板由于线性运动而相互通过。

公开(公告)号：US20030022595A1

公开(公告)日：2003-01-30

申请号：US10172308

申请日：2002-06-14

Inventor： Chien-Hsin Lai ,  Cheng-Chi Hsieh ,  Jung-Nan Tseng ,  Huang-Yi Lin ,  Fu-Yang Yu

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/005 ,  B24B49/16

Abstract: A controlled pressure regulation system generates the wafer-pressing pressures during a polishing operation. A wafer carrier head holds a wafer to be polished against a platen. A first and second pressure regulators respectively generate a first and second pressure onto the platen and the wafer carrier head to press the wafer to be polished. A first and second controllers are respectively connected to the first and second pressure regulators in control feedback loops to control the generation of the first and second pressures. The first and second pressures are controlled to obtain a desired difference of pressure between the first and second pressure.

Abstract translation: 受控的压力调节系统在抛光操作期间产生晶片压制压力。 晶片载体头将待抛光的晶片保持在压板上。 第一和第二压力调节器分别在压板和晶片承载头上产生第一和第二压力，以挤压要抛光的晶片。 第一和第二控制器分别连接到控制反馈回路中的第一和第二压力调节器，以控制第一和第二压力的产生。 控制第一和第二压力以在第一和第二压力之间获得期望的压力差。

公开(公告)号：US20030022593A1

公开(公告)日：2003-01-30

申请号：US09814260

申请日：2001-03-21

Inventor： Scott E. Moore ,  Scott G. Meikle ,  Magdel Crum

IPC: B24B049/00 ,  B24B051/00 ,  B24C007/00

CPC classification number: B24B37/04 ,  B24B49/10 ,  B24B57/02

Abstract: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

Abstract translation: 提供半导体处理器系统，配置为提供半导体工件工艺流体的系统，半导体工件加工方法，半导体工件加工流体的制备方法以及将半导体工件加工流体输送到半导体处理器的方法。 本发明的一个方面提供一种半导体处理器系统，其包括适于使用工艺流体处理至少一个半导体工件的处理室; 连接处理室并被配置为接收处理流体的连接; 耦合所述连接并被配置为输出指示所述过程流体的信号的传感器; 以及与所述传感器耦合并被配置为响应于所述信号来控制所述半导体处理器系统的至少一个操作的控制系统。

公开(公告)号：US20030008597A1

公开(公告)日：2003-01-09

申请号：US09899408

申请日：2001-07-05

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Tung-Ching Tseng

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/013 ,  B24B49/003 ,  B24B49/04 ,  B24B49/12

Abstract: A dual detection method for end point in a chemical mechanical polishing process is described. The dual detection method utilizes both an optical detection device and an acoustical detection device. The acoustical detection device may also be used independently in certain applications without the optical detection device. The acoustical detection device determines an end point and stops the CMP process when a volume of the acoustical emission changes by at least 30% from its initial volume, or preferably changes by at least 50% from its initial volume.

公开(公告)号：US20020173225A1

公开(公告)日：2002-11-21

申请号：US10052475

申请日：2002-01-17

Inventor： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/205 ,  B24B21/04 ,  B24B21/08 ,  B24B37/013 ,  B24B37/04 ,  B24B47/04 ,  B24B49/16

Abstract: The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical processing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

Abstract translation: 所描述的方法和系统提供用于材料去除过程（例如在工件上执行的化学机械处理（CMP））的原位端点检测。 在优选实施例中，使用光学检测系统来检测在使用CMP去除平面导电层期间的端点。 光学透明的抛光带通过抛光带上的任何点提供端点检测。 一旦检测到端点，就可以使用信号来终止或改变先前已经启动的CMP过程。

公开(公告)号：US20020164925A1

公开(公告)日：2002-11-07

申请号：US09847867

申请日：2001-05-02

Applicant: Applied Materials, Inc.

Inventor： Boguslaw A. Swedek ,  Manoocher Birang ,  Nils Johansson

IPC: B24B049/00 ,  B24B051/00 ,  B24B001/00

CPC classification number: B24B37/013 ,  B24B49/02 ,  B24B49/10 ,  B24B49/12 ,  G01B7/105 ,  G01B11/0683

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract translation: 化学机械抛光装置和方法可以使用涡流监测系统和光学监测系统。 来自监控系统的信号可以组合在输出线上并由计算机提取。 可以计算抛光垫的厚度。 涡流监测系统和光学监测系统可以测量基板上基本相同的位置。

公开(公告)号：US20020094758A1

公开(公告)日：2002-07-18

申请号：US09759830

申请日：2001-01-12

Inventor： Timothy Clark Reiley ,  Thomas Robert Albrecht

IPC: B24B049/00 ,  B24B051/00

CPC classification number: B24B37/005 ,  B24B37/048 ,  B24B49/10 ,  G11B5/1871 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3173 ,  G11B5/3903

Abstract: A lapping monitor for monitoring the lapping of a lapping surface of a body having at least one transducer which has a height that has to be lapped. The lapping monitor has a lap unit for lapping the lapping surface, at least one lapping indicator mounted close to the transducer to indicate the height of the transducer and a control block in the body at a certain distance from the lapping indicator or indicators. It is also possible to use a property of the transducers themselves, e.g., their resistance, to indicate their height. The control block receives indication of the height of the transducers being lapped from the lapping indicators or from the transducers via an electrical connection. The control block is further equipped with test contacts for establishing an external connection. The lapping monitor is particularly well-suited for performing 4-point resistance tests of the lapping indicators or transducers and can be effectively employed in lapping rows of magnetoresistive transducers such as MR or GMR heads to accurate heights.

Abstract translation: 一种用于监测身体研磨表面的研磨的研磨监测器，其具有至少一个具有必须重叠的高度的换能器。 研磨监测器具有用于研磨研磨表面的搭接单元，安装在传感器附近的至少一个研磨指示器，以指示换能器的高度和与研磨指示器或指示器相距一定距离的主体中的控制块。 也可以使用换能器本身的特性，例如它们的阻力来表示它们的高度。 控制块通过电连接接收从研磨指示器或从换能器上研磨的换能器的高度的指示。 控制块还配备有用于建立外部连接的测试触点。 研磨显示器特别适用于对研磨指示器或换能器进行4点电阻测试，并且可以有效地用于研磨诸如MR或GMR磁头的磁阻传感器行以达到准确的高度。