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    Light emitting diode
    112.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08373179B2

    公开(公告)日：2013-02-12

    申请号：US13159430

    申请日：2011-06-14

    Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    IPC: H01L33/00

    CPC classification number: H01L33/145 ,  H01L33/387

    Abstract: A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

    Abstract translation: 提供了包括衬底，半导体器件层，电流阻挡层，电流扩散层，第一电极和第二电极的LED芯片。 半导体器件层设置在基板上。 电流阻挡层设置在半导体器件层的一部分上，并且包括电流阻挡段和电流分布调节段。 电流扩展层设置在半导体器件层的一部分上并覆盖电流阻挡层。 第一电极设置在电流扩展层上，其中电流阻挡段的一部分与第一电极重叠。 当前阻挡段和第一电极的轮廓是相似的图。 第一个电极的等高线并且在当前阻挡段的轮廓内。 电流分布调节段不与第一电极重叠。

    Fabricating method of light emitting diode chip
    113.
    发明授权
    Fabricating method of light emitting diode chip 有权
    发光二极管芯片的制造方法

    公开(公告)号：US08329487B2

    公开(公告)日：2012-12-11

    申请号：US12916642

    申请日：2010-11-01

    Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    IPC: H01L33/02

    CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/46

    Abstract: In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.

    Abstract translation: 在LED的制造方法中，在衬底上依次形成第一掺杂半导体材料层，发光材料层和第二掺杂半导体材料层。 图案化第一类型和第二类型掺杂半导体材料层和发光材料层以形成第一掺杂半导体层，有源层和第二掺杂半导体层。 有源层设置在第一掺杂半导体层的一部分上。 第二掺杂半导体层设置在有源层上并具有第一顶表面。 在第一型掺杂半导体层上形成壁结构，其不被有源层覆盖，并且壁结构围绕有源层，并且具有比第二类型掺杂半导体层的第一顶表面高的第二顶表面 。 电极形成在第一和第二掺杂半导体层上。

    SEMICONDUCTOR LIGHT EMITTING STRUCTURE
    114.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING STRUCTURE 审中-公开
    半导体发光结构

    公开(公告)号：US20120193664A1

    公开(公告)日：2012-08-02

    申请号：US13358489

    申请日：2012-01-25

    Applicant: Jhih-Han LIN

    Inventor： Jhih-Han LIN

    IPC: H01L33/22

    CPC classification number: H01L33/20 ,  H01L33/10

    Abstract: A semiconductor light emitting structure includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer and two electrodes. The substrate has a top surface and a bottom surface. The top surface is not parallel to the bottom light emitting surface of the active layer. The first semiconductor layer is disposed on the top surface. The active layer is disposed on at least one portion of the first semiconductor layer. The second semiconductor layer is disposed on the active layer. In an embodiment, the top surface can be realized by an oblique surface, a curved surface or a zigzag surface.

    Abstract translation: 半导体发光结构包括基板，第一半导体层，有源层，第二半导体层和两个电极。 基板具有顶表面和底表面。 顶表面不平行于有源层的底部发光表面。 第一半导体层设置在顶表面上。 有源层设置在第一半导体层的至少一部分上。 第二半导体层设置在有源层上。 在一个实施例中，顶表面可以通过倾斜表面，曲面或曲折表面来实现。

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