公开(公告)号：US20120002096A1

公开(公告)日：2012-01-05

申请号：US13032137

申请日：2011-02-22

Applicant: Min-Seog CHOI ,  Woon-Bae KIM ,  Eun-Sung LEE ,  Kyu-Dong JUNG

Inventor： Min-Seog CHOI ,  Woon-Bae KIM ,  Eun-Sung LEE ,  Kyu-Dong JUNG

IPC: H04N5/225 ,  H01L27/14

CPC classification number: H04N5/2253 ,  H04N5/2257 ,  H04N5/2258 ,  H04N5/2259 ,  H04N5/23238

Abstract: An imaging device with a plurality of imaging units is provided. The imaging device includes a supporting substrate, a flexible substrate and a movable unit. The supporting substrate is formed with a hard material, and the flexible substrate includes a plurality of imaging units positioned at least in a width direction. The flexible substrate is fixed at a first edge portion with the supporting substrate, while an opposite second edge portion of the flexible substrate is connected with the movable unit. The movable unit moves the opposite second edge portion of the flexible substrate in the width direction and bends or flattens the flexible substrate. A degree of curvature at which the flexible substrate is bent may vary based on a distance by which the movable unit moves in the width direction, so that a field of view (FOV) of the plurality of imaging units may be adjusted.

Abstract translation: 提供具有多个成像单元的成像装置。 成像装置包括支撑基板，柔性基板和可移动单元。 支撑基板由硬质材料形成，柔性基板包括至少沿宽度方向定位的多个成像单元。 柔性基板与支撑基板固定在第一边缘部分，而柔性基板的相对的第二边缘部分与可移动单元连接。 可移动单元在柔性基板的宽度方向上移动相对的第二边缘部分并弯曲或平坦化柔性基板。 柔性基板弯曲的弯曲度可以基于可移动单元在宽度方向上移动的距离而变化，使得可以调整多个成像单元的视场（FOV）。

公开(公告)号：US07964790B2

公开(公告)日：2011-06-21

申请号：US11737508

申请日：2007-04-19

Applicant: Won Cheol Jung ,  Eun Sung Lee ,  Sang Cheol Park ,  Young Jun Park ,  Byung Hee Sohn ,  Jung Gyu Nam ,  Hye Suk Jo

Inventor： Won Cheol Jung ,  Eun Sung Lee ,  Sang Cheol Park ,  Young Jun Park ,  Byung Hee Sohn ,  Jung Gyu Nam ,  Hye Suk Jo

IPC: H01L51/46 ,  C07C223/01

CPC classification number: H01L51/0086 ,  C07F15/0053 ,  C09B57/10 ,  C09B69/04 ,  H01G9/2031 ,  H01G9/2059

Abstract: Disclosed herein are a novel dye for a photoelectric device and a photoelectric device comprising the dye. More particularly, the dye for a photoelectric device incorporates different quaternary ammoniums into a carboxyl or phosphoric acid-substituted bipyridyl ligand of the dye, and a photoelectric device comprising the same. The dye for a photoelectric device as disclosed herein exhibits improved photosensitivity and light absorbing characteristics, thereby making it possible to fabricate a highly efficient photoelectric device when the dye is included in the device.

Abstract translation: 本文公开了一种用于光电装置的新型染料和包含该染料的光电装置。 更具体地，用于光电装置的染料将不同的季铵掺入到染料的羧基或磷酸取代的联吡啶配体中，以及包含其的光电器件。 本文公开的用于光电装置的染料表现出改进的光敏性和光吸收特性，从而当染料包含在器件中时可以制造高效的光电器件。

公开(公告)号：US07935733B2

公开(公告)日：2011-05-03

申请号：US11446972

申请日：2006-06-06

Applicant: Seon Mi Yoon ,  Jeong Hee Lee ,  Eun Sung Lee ,  Jae Young Choi

Inventor： Seon Mi Yoon ,  Jeong Hee Lee ,  Eun Sung Lee ,  Jae Young Choi

IPC: B01F3/12

CPC classification number: C07F9/091 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/04 ,  C01B2202/06 ,  C01B2202/28

Abstract: A dispersant for a more concentrated carbon nanotube solution, and a composition including the same are provided. The dispersant may have a hydrophobic chain structure with head groups capable of surrounding carbon nanotube particles. The dispersant may adsorbed onto the carbon nanotube particles. The composition may include the dispersant, an aqueous liquid medium and a carbon nanotube. The composition may further include an additive. It may be possible to produce a more concentrated carbon nanotube solution exhibiting an increase in dispersion of the carbon nanotube particles and/or more stability.

Abstract translation: 提供了一种用于更浓缩的碳纳米管溶液的分散剂及包含其的组合物。 分散剂可以具有能够围绕碳纳米管颗粒的头基团的疏水链结构。 分散剂可以吸附在碳纳米管颗粒上。 组合物可以包括分散剂，水性液体介质和碳纳米管。 组合物还可以包含添加剂。 可能生产出显示碳纳米管颗粒分散性增加的更浓缩的碳纳米管溶液和/或更高的稳定性。

公开(公告)号：US20110092034A1

公开(公告)日：2011-04-21

申请号：US12972998

申请日：2010-12-20

Applicant: Eun Sung LEE

Inventor： Eun Sung LEE

IPC: H01L21/8242

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10802

Abstract: The following discloses and describes a zero capacitor RAM as well as a method for manufacturing the same. The zero capacitor RAM includes an SOI substrate. This SOI substrate is composed of a stacked structure of a silicon substrate, an embedded insulation film and a silicon layer. This layer is patterned into line types to constitute active patterns. Moreover, a first insulation layer forms between the active patterns and gates form on the active patterns as well as the first insulation layer to extend perpendicularly to the active patterns. In addition, a source forms in the active pattern on one side of each gate, a drain forms in the active pattern on the other side of each gate which is achieved by filling a metal layer. Continuing, a contact plug forms between the gates on the source and an interlayer dielectric forms on the contact plug in addition to the gates Finally, a bit line forms on the interlayer dielectric to extend perpendicularly to the gates and come into contact with the drain.

Abstract translation: 以下公开并描述了零电容器RAM及其制造方法。 零电容RAM包括SOI衬底。 该SOI衬底由硅衬底，嵌入绝缘膜和硅层的堆叠结构组成。 该层被图案化成行类型以构成活动模式。 此外，在活性图案之间形成有源图案和栅极之间形成的第一绝缘层以及垂直于有源图案延伸的第一绝缘层。 此外，源极在每个栅极的一侧形成有源图案，在每个栅极的另一侧的有源图案中形成漏极，这是通过填充金属层而实现的。 接下来，在源极之间的栅极之间形成接触插塞，除了栅极之外，在接触插塞上形成层间电介质。最后，在层间电介质上形成位线，以垂直于栅极延伸并与漏极接触。

公开(公告)号：US07863448B2

公开(公告)日：2011-01-04

申请号：US11757831

申请日：2007-06-04

Applicant: Byung Hee Sohn ,  Sang Cheol Park ,  Won Cheol Jung ,  Jung Gyu Nam ,  Young Jun Park ,  Eun Sung Lee

Inventor： Byung Hee Sohn ,  Sang Cheol Park ,  Won Cheol Jung ,  Jung Gyu Nam ,  Young Jun Park ,  Eun Sung Lee

IPC: C07F15/00 ,  H01L31/0256

CPC classification number: C07F15/0053 ,  C09B57/10 ,  H01G9/2004 ,  H01G9/2031 ,  H01G9/2059 ,  Y02E10/542 ,  Y10T428/31507 ,  Y10T428/31938

Abstract: Disclosed is a novel dye for use in a photoelectronic device, wherein the photoelectronic device is comprised of a photoanode comprising the dye. According to the novel dye, the dye is derived through the introduction of a group which narrows the dihedral angle of the dye ligand as well as through the introduction of conjugated groups. Since the dye has improved light sensitivity and absorption properties, it can be used to fabricate a photoelectronic device with high power conversion efficiency.

Abstract translation: 公开了一种用于光电子器件的新型染料，其中光电子器件由包含染料的光电阳极组成。 根据新型染料，通过引入使染料配体的二面角度变窄并通过引入共轭基团的基团来衍生染料。 由于染料具有改善的光敏度和吸收性能，因此可用于制造具有高功率转换效率的光电子器件。

公开(公告)号：US20100108115A1

公开(公告)日：2010-05-06

申请号：US12604786

申请日：2009-10-23

Applicant: Kyu-hyoung LEE ,  Sang-mock LEE ,  Eun-sung LEE ,  Il-ho KIM

Inventor： Kyu-hyoung LEE ,  Sang-mock LEE ,  Eun-sung LEE ,  Il-ho KIM

IPC: H01L35/12

CPC classification number: H01L35/16 ,  H01L35/26

Abstract: A bulk thermoelectric material having a structure in which migration of carriers is not inhibited but phonons are scattered is described. The bulk thermoelectric material includes: a bulk crystalline thermoelectric material matrix; and nanoparticles coated with a conductive material within the thermoelectric material matrix.

Abstract translation: 描述了具有其中载流子迁移不被抑制但声子散射的结构的体热电材料。 本体热电材料包括：本体结晶热电材料基体; 以及在热电材料基体内涂覆有导电材料的纳米颗粒。

公开(公告)号：US07691295B2

公开(公告)日：2010-04-06

申请号：US11491605

申请日：2006-07-24

Applicant: Eun Sung Lee ,  Jung Gyu Nam ,  Won Cheol Jung ,  Byung Hee Sohn ,  Sang Cheol Park ,  Young Jun Park

Inventor： Eun Sung Lee ,  Jung Gyu Nam ,  Won Cheol Jung ,  Byung Hee Sohn ,  Sang Cheol Park ,  Young Jun Park

IPC: H01B1/20 ,  H01B1/08

CPC classification number: H01G9/2031 ,  Y02E10/542 ,  Y02P70/521

Abstract: Disclosed herein are a metal oxide paste composition comprising a carboxylic ester dispersant and/or a phosphate dispersant, and a method for manufacturing a semiconductor electrode for solar cells using the same. The disclosed metal oxide paste composition improves the dispersibility of metal oxide nanoparticles. Thus, if it is used to manufacture a semiconductor electrode for solar cells, it will allow the increased adsorption of a dye, thus improving the photoelectric efficiency of the resulting solar cell.

Abstract translation: 本文公开了包含羧酸酯分散剂和/或磷酸盐分散剂的金属氧化物浆料组合物，以及使用其制造用于太阳能电池的半导体电极的方法。 所公开的金属氧化物糊组合物改善了金属氧化物纳米颗粒的分散性。 因此，如果用于制造用于太阳能电池的半导体电极，则可以增加染料的吸附，从而提高得到的太阳能电池的光电效率。

公开(公告)号：US07663236B2

公开(公告)日：2010-02-16

申请号：US11539448

申请日：2006-10-06

Applicant: Eun Sung Lee ,  Young Jun Park ,  Sang Cheol Park ,  Jung Gyu Nam ,  Ju Chul Park

Inventor： Eun Sung Lee ,  Young Jun Park ,  Sang Cheol Park ,  Jung Gyu Nam ,  Ju Chul Park

IPC: H01L31/0224

CPC classification number: H01G9/2031 ,  H01G9/2013 ,  H01L31/022466 ,  Y02E10/542

Abstract: Disclosed herein is a semiconductor electrode with improved power conversion efficiency through inhibition of recombination reactions of electrons. The semiconductor electrode comprises a transparent electrode consisting of a substrate and a conductive material coated on the substrate, and a metal oxide layer formed on the transparent electrode wherein the metal oxide layer contains a phosphate.Further disclosed is a solar cell employing the semiconductor electrode.

Abstract translation: 本文公开了通过抑制电子的重组反应来提高功率转换效率的半导体电极。 半导体电极包括由基板和涂覆在基板上的导电材料组成的透明电极和形成在透明电极上的金属氧化物层，其中金属氧化物层含有磷酸盐。 另外公开了采用半导体电极的太阳能电池。

公开(公告)号：US20090127621A1

公开(公告)日：2009-05-21

申请号：US11968701

申请日：2008-01-03

Applicant: Eun Sung LEE

Inventor： Eun Sung LEE

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10802

Abstract: The following discloses and describes a zero capacitor RAM as well as a method for manufacturing the same. The zero capacitor RAM includes an SOI substrate. This SOI substrate is composed of a stacked structure of a silicon substrate, an embedded insulation film and a silicon layer. This layer is patterned into line types to constitute active patterns. Moreover, a first insulation layer forms between the active patterns and gates form on the active patterns as well as the first insulation layer to extend perpendicularly to the active patterns. In addition, a source forms in the active pattern on one side of each gate, a drain forms in the active pattern on the other side of each gate which is achieved by filling a metal layer. Continuing, a contact plug forms between the gates on the source and an interlayer dielectric forms on the contact plug in addition to the gates Finally, a bit line forms on the interlayer dielectric to extend perpendicularly to the gates and come into contact with the drain.

Abstract translation: 以下公开并描述了零电容器RAM及其制造方法。 零电容RAM包括SOI衬底。 该SOI衬底由硅衬底，嵌入绝缘膜和硅层的堆叠结构组成。 该层被图案化成行类型以构成活动模式。 此外，在活性图案之间形成有源图案和栅极之间形成的第一绝缘层以及垂直于有源图案延伸的第一绝缘层。 此外，源极在每个栅极的一侧形成有源图案，在每个栅极的另一侧的有源图案中形成漏极，这是通过填充金属层而实现的。 接下来，在源极之间的栅极之间形成接触塞，除了栅极之外，在接触插塞上形成层间电介质。最后，在层间电介质上形成位线，以垂直于栅极延伸并与漏极接触。

公开(公告)号：US07411261B2

公开(公告)日：2008-08-12

申请号：US10773312

申请日：2004-02-09

Applicant: Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

Inventor： Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

IPC: H01L29/84

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

Abstract translation: 一种用于制造具有固定到基板上的固定部件，连接部件，驱动部件，驱动电极和接触部件的MEMS器件的方法，包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 平坦化金属层直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口，从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分，使得牺牲层的一部分保留在固定区域中。