公开(公告)号：US07372206B2

公开(公告)日：2008-05-13

申请号：US10627727

申请日：2003-07-28

Applicant: Kazunori Inoue ,  Shigeo Kasahara ,  Koichi Sakita ,  Osamu Toyoda ,  Minoru Hasegawa ,  Hideki Harada ,  Keiichi Betsui

Inventor： Kazunori Inoue ,  Shigeo Kasahara ,  Koichi Sakita ,  Osamu Toyoda ,  Minoru Hasegawa ,  Hideki Harada ,  Keiichi Betsui

IPC: H01J17/49

CPC classification number: H01J11/12 ,  H01J9/02 ,  H01J11/40

Abstract: The present invention provides that a gas discharge panel substrate assembly comprising: electrodes formed on a substrate, a dielectric layer covering the electrodes, and a protective layer covering the dielectric layer and in contact with a discharge space, wherein the protective layer includes MgO and at least one compound selected from the group consisting of an Al compound, a Ti compound, a Y compound, a Zn compound, a Zr compound, a Ta compound and SiC.

Abstract translation: 本发明提供一种气体放电面板基板组件，包括：形成在基板上的电极，覆盖电极的电介质层和覆盖电介质层并与放电空间接触的保护层，其中保护层包括MgO，并且 选自Al化合物，Ti化合物，Y化合物，Zn化合物，Zr化合物，Ta化合物和SiC中的至少一种化合物。

公开(公告)号：US20080018414A1

公开(公告)日：2008-01-24

申请号：US11730961

申请日：2007-04-05

Applicant: Kazunori Inoue ,  Takashi Matsuda ,  Shogo Inoue ,  Xiaoyu Mi ,  Jyouji Kimura

Inventor： Kazunori Inoue ,  Takashi Matsuda ,  Shogo Inoue ,  Xiaoyu Mi ,  Jyouji Kimura

IPC: H03H9/72

CPC classification number: H03H9/72 ,  H03H3/08 ,  H03H9/0576 ,  H03H2250/00

Abstract: An elastic wave device formed by bonding at least two surface acoustic wave devices by filling a resin therebetween is disclosed. Each of surface acoustic wave (SAW) devices includes a substrate; a functioning portion configured on the substrate; a recess that forms a space portion necessary for operation of the functioning portion, and a package that covers the surface of the substrate, and side faces of the package of the at least two SAW devices, corresponding to a portion bonded by filling of the resin between at least two SAW devices, includes the at least one cutout, and a first resin covers a portion of each of the side faces, the back faces, and the front faces of the substrate of the at least two SAW devices, and the first resin is filled with in the at least one cutout on the side faces of the package.

Abstract translation: 公开了一种通过在其间填充树脂来粘合至少两个表面声波装置而形成的弹性波装置。 每个表面声波（SAW）器件包括衬底; 配置在所述基板上的功能部; 形成操作功能部分所需的空间部分的凹部和覆盖基板表面的封装以及至少两个SAW器件的封装的侧面，对应于通过填充树脂粘合的部分 在至少两个SAW器件之间，包括至少一个切口，并且第一树脂覆盖所述至少两个SAW器件的基板的每个侧面，背面和前表面的一部分，并且第一树脂 树脂填充在包装的侧面上的至少一个切口中。

公开(公告)号：US20080012016A1

公开(公告)日：2008-01-17

申请号：US11767217

申请日：2007-06-22

Applicant: Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

Inventor： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

IPC: H01L33/00 ,  H01B1/02

CPC classification number: H01J29/28 ,  G02F1/13439 ,  G02F1/13458 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2227/323

Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Abstract translation: 基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。 此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。

公开(公告)号：US20070284742A1

公开(公告)日：2007-12-13

申请号：US11741193

申请日：2007-04-27

Applicant: Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

Inventor： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

IPC: H01L23/48

CPC classification number: H01L29/4908 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

Abstract: A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.

Abstract translation: 半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

公开(公告)号：US20060189123A1

公开(公告)日：2006-08-24

申请号：US11289382

申请日：2005-11-30

Applicant: Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

Inventor： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

IPC: H01L21/4763 ,  H01L21/302

CPC classification number: C23F1/44 ,  C23F1/20 ,  C23F1/26 ,  H01L21/32134

Abstract: A fine wiring line profile with satisfactory precision is formed from a multilayer film containing a first layer made of an aluminum alloy and a second layer formed thereon made of a molybdenum-niobium alloy, by simultaneously etching the two layers constituting the multilayer film through only one etching operation while preventing the upper layer from forming overhangs. An etchant for etching a multilayer film containing an aluminum alloy layer formed over a substrate and a molybdenum-niobium alloy layer formed thereon having a niobium content of 2-19% by weight contains an aqueous solution of an acid mixture containing phosphoric acid, nitric acid, and an organic acid; and a method of etching is carried out with this etchant. The etchant preferably has a phosphoric acid concentration Np of 50-75% by weight, a nitric acid concentration Nn of 2-15% by weight, and an acid ingredient concentration defined by Np+(98/63)Nn of 55-85% by weight.

Abstract translation: 由含有由铝合金制成的第一层和由钼铌合金构成的第二层的多层膜通过仅通过一个同时蚀刻构成多层膜的两层形成精细的布线线廓 同时防止上层形成悬垂。 用于蚀刻含有在基材上形成的铝合金层的多层膜的蚀刻剂和其上形成的铌含量为2〜19重量％的钼 - 铌合金层含有含有磷酸，硝酸的酸混合物的水溶液 ，和有机酸; 并且用该蚀刻剂进行蚀刻的方法。 蚀刻剂的磷酸浓度优选为50〜75重量％，硝酸浓度N 2〜2重量％，酸成分 浓度由55-85％（重量）的N + P +（98/63）N 所定义。

公开(公告)号：US20050082527A1

公开(公告)日：2005-04-21

申请号：US10973402

申请日：2004-10-27

Applicant: Nobuhiro Nakamura ,  Kazunori Inoue ,  Takuji Yoshida ,  Kazuhiro Kobayashi ,  Ken Nakashima

Inventor： Nobuhiro Nakamura ,  Kazunori Inoue ,  Takuji Yoshida ,  Kazuhiro Kobayashi ,  Ken Nakashima

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036

CPC classification number: G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136236

Abstract: A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a second metallic pattern is provided on the semiconductor pattern. The second metallic pattern is surrounded by the semiconductor pattern.

公开(公告)号：US06727178B2

公开(公告)日：2004-04-27

申请号：US10419179

申请日：2003-04-21

Applicant: Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

Inventor： Noriyuki Saitou ,  Takuji Yoshida ,  Kazunori Inoue ,  Makoto Ishikawa ,  Yoshio Kamiharaguchi

IPC: H01L2144

CPC classification number: H01L21/32134 ,  C23F1/20

Abstract: An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.

Abstract translation: 用于通过湿蚀刻图案化薄金属膜的蚀刻剂，特别是用于制造半导体器件（诸如半导体元件和液晶显示元件）的蚀刻剂适用于具有由铝制成的第一层或多层膜的多层膜 铝合金，其上形成有由铝或铝合金制成的第二层，每个第二层含有选自氮，氧，硅和碳中的至少一种元素，并且具有35至65重量％的磷酸含量和硝酸 含量为0.5〜15重量％ 并且使用蚀刻剂进行蚀刻。

公开(公告)号：US06713959B1

公开(公告)日：2004-03-30

申请号：US09763572

申请日：2001-02-26

Applicant: Osamu Toyoda ,  Akira Tokai ,  Kazunori Inoue ,  Fumihiro Namiki ,  Saburou Morita ,  Yojiro Shimada ,  Hitoshi Hirakawa ,  Takashi Katayama

Inventor： Osamu Toyoda ,  Akira Tokai ,  Kazunori Inoue ,  Fumihiro Namiki ,  Saburou Morita ,  Yojiro Shimada ,  Hitoshi Hirakawa ,  Takashi Katayama

IPC: G09G328

CPC classification number: H01J11/12 ,  H01J9/242 ,  H01J11/36

Abstract: A plasma display panel and method of producing same, in which projections are formed in grooves between partitions and phosphor layers are provided on the projections so as to increase the area where phosphor adheres and thereby to increase the luminance. A pair of substrates, opposed to each other, form a discharge space. Band-like partitions partitioning the discharge space are arranged on one of the back and front substrates. Wall-like projections, lower than the partitions but high enough to increase the area where phosphor layers are formed, are provided in the region where the discharge space is formed in the long grooves between the partitions or around the discharge space. Phosphor layers are formed in the grooves between the partitions including the wall-like projections.

Abstract translation: 在突起上设置等离子体显示面板及其制造方法，其中突起形成在分隔壁和荧光体层之间的凹槽中，以增加荧光粉粘附的面积，从而增加亮度。 彼此相对的一对基板形成放电空间。 分隔放电空间的带状分隔件布置在背面和正面基板之一上。 在隔板之间的长槽或放电空间周围形成放电空间的区域中，设置有低于分隔壁但足够高以增加形成荧光体层的面积的壁状突起。 在包括壁状突起的隔板之间的沟槽中形成荧光体层。

公开(公告)号：US06650062B2

公开(公告)日：2003-11-18

申请号：US10082165

申请日：2002-02-26

Applicant: Kazunori Inoue ,  Saburou Morita ,  Osamu Toyoda ,  Motonari Kifune

Inventor： Kazunori Inoue ,  Saburou Morita ,  Osamu Toyoda ,  Motonari Kifune

IPC: G09G310

CPC classification number: H01J11/36 ,  H01J9/20 ,  H01J11/12 ,  H01J11/16 ,  H01J11/24 ,  H01J11/38 ,  H01J2211/245

Abstract: A PDP having a novel cell structure that is superior in light emission efficiency is provided. A conductive film to be display electrodes X and Y is formed on side portions of a wall so that a main surface that contributes to discharge in the display electrode X is disposed so as to be opposed to a main surface of the neighboring display electrode Y via a gas space. A power supplying portion straddling plural cells in the display electrodes X and Y is provided on the upper surface of the wall. The display electrodes X and Y are covered with a dielectric layer that is thin at the side portion and thick at the top portion of the wall.

Abstract translation: 提供具有发光效率优异的新颖的单元结构的PDP。 在壁的侧部形成有用于显示电极X和Y的导电膜，使得有助于显示电极X中的放电的主表面设置成与相邻的显示电极Y的主表面相对经过 一个气体空间。 跨越显示电极X和Y中的多个单元的供电部分设置在壁的上表面上。 显示电极X和Y被覆盖有在侧壁部分较薄并且壁顶部较厚的介电层。

公开(公告)号：US06236159B1

公开(公告)日：2001-05-22

申请号：US09087503

申请日：1998-05-29

Applicant: Kazunori Inoue ,  Fumihiro Namiki ,  Keiichi Betsui ,  Shinya Fukuta ,  Tadayoshi Kosaka

Inventor： Kazunori Inoue ,  Fumihiro Namiki ,  Keiichi Betsui ,  Shinya Fukuta ,  Tadayoshi Kosaka

IPC: H01J1749

CPC classification number: H01J11/12 ,  H01J11/54

Abstract: The gas discharge panel according to the present invention includes a pair of substrates, a plurality of barrier ribs, a sealing member, and two gas flow barriers. One of the substrates has a first vent hole and a second vent hole provided in a peripheral portion thereof for intercommunication between the inside and outside of the panel. The at least two gas flow barriers are provided between the sealing member and the barrier ribs located on opposite sides of an arrangement of the barrier ribs so that a gas introduced from the first vent hole flows through inter-rib spaces defined between adjacent pairs of barrier ribs and is expelled from the second vent hole.

Abstract translation: 根据本发明的气体放电面板包括一对基板，多个隔壁，密封构件和两个气体流动屏障。 一个基板具有设置在其周边部分中的第一通气孔和第二通气孔，用于在面板的内部和外部之间进行相互通信。 所述至少两个气体流动阻挡件设置在所述密封构件和位于所述阻挡肋的排列的相对侧上的所述障壁之间，使得从所述第一通气孔引入的气体流过相邻的隔壁对之间的肋间空间 排出第二排气孔。