Abstract:
Provided are carbon materials having a high specific surface area and high conductivity, and a preparation method thereof. The carbon material includes pores on the surface and inside, with channels connecting the pores to one another. Such carbon material has a high specific surface area and high conductivity, and can be used in a number of diverse fields. Exemplary uses include use as an electric double layer capacitor (EDLC), as a catalyst supporter of a fuel cell, as an electrode conductive material of a rechargeable lithium battery, and as an adsorption agent.
Abstract:
Disclosed herein is a case for mobile communication terminals that is capable of fixing both sides of the body part of a sliding-type terminal when the terminal is attached to the case such that the front surface of a sliding cover part disposed on the body part of the sliding-type terminal is fully exposed. The case comprises a back plate for allowing a terminal to be attached thereto, and a flip-type cover connected to the lower end of the back plate for covering the front surface of the terminal. The back plate is provided at the front surface thereof with a fixing member for detachably fixing both sides of the body part of the terminal. With the case according to the present invention, the sliding cover part is easily opened and closed when the sliding-type terminal is attached to the case.
Abstract:
Semiconducting type carbon nanotubes are efficiently separated from a mixture of semiconducting and metallic carbon nanotubes in a simple manner, by way of treating the carbon nanotube mixture with an organic solution containing nitronium ions, filtering the resulting mixture to recover remaining solids, and heat-treating the solids.
Abstract:
A method of isolating semiconducting carbon nanotubes includes mixing carbon nanotubes with a mixed acid solution of nitric acid and sulfuric acid to obtain a dispersion of carbon nanotubes, stirring the carbon nanotube dispersion, and filtering the carbon nanotube dispersion. Functional groups remaining on the filtered carbon nanotubes may then be removed, e.g., via heating.
Abstract:
A fixed-point cell for connection with a thermometer protecting tube and apparatus for estimating the lifetime of thermometerin the thermometer protecting tube including: a reference temperature material layer made of high-purity metallic materials to indicate a reference temperature based on a phase change of material, which coexists in a two-phase or three-phase state; a container part of a multiple structure having the reference temperature material layer embedded and sealed therein for achieving thermal correlation between the reference temperature material layer and the thermometer protecting tube having a thermometer contained therein, the thermometer protecting tube being inserted into the central hole of the fixed-point cell while being in contact with the inner circumference of the container part; and fixing devices disposed on the top portion of the container part for fixing the thermometer protecting tube to the container part in a fastening manner.
Abstract:
The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.
Abstract:
The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.
Abstract:
A method for manufacturing a high strength lumber obtained by artificially compressing a volume of grown natural wood without any destruction of wood tissue, and which is made such that a pine tree is lumbered and exposed to a microwave whereby moisture content is forcibly discharged and cellulose is softened and thereby volume is constricted up to more than 70% by a hydraulic press during a latent heat is still present, so that a high strength lumber is obtained without any destruction of lumber tissue and due to this, a strength and hardness are improved about 30 times of original wood and a tensile strength is increased about up to 10 times of original wood.