公开(公告)号：US08673776B2

公开(公告)日：2014-03-18

申请号：US13305417

申请日：2011-11-28

申请人： Xinpeng Wang

发明人： Xinpeng Wang

IPC分类号： H01L21/44

CPC分类号： H01L29/66545 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76895 ,  H01L29/78

摘要： A method for manufacturing a semiconductor device comprises: providing a substrate having an active area and a gate structure on the active area and formed with a first interlayer dielectric layer thereon, wherein the first interlayer dielectric layer has a first open to expose a portion of a surface of the active area, and an upper surface of the first interlayer dielectric layer is substantially flush with an upper surface of the gate; filling the first open with a first conductive material to form a first portion of contact; forming a second interlayer dielectric layer over the first interlayer dielectric layer, the second interlayer dielectric layer having a second open to substantially expose an upper part of the first portion of the contact in the first open; and filling the second open with a second conductive material to form a second portion of the contact.

摘要翻译： 一种制造半导体器件的方法包括：在有源区上提供具有有源区和栅极结构的衬底，并在其上形成有第一层间电介质层，其中第一层间介质层具有第一开口以暴露一部分 有源区的表面和第一层间电介质层的上表面与栅极的上表面基本齐平; 用第一导电材料填充第一开口以形成第一部分接触; 在所述第一层间介电层上形成第二层间介质层，所述第二层间介质层具有第二开口，以在所述第一开路中基本上暴露所述接触件的第一部分的上部; 并用第二导电材料填充第二开口以形成接触件的第二部分。

公开(公告)号：US08669589B2

公开(公告)日：2014-03-11

申请号：US13112285

申请日：2011-05-20

申请人： Yifeng Wu ,  Marcia Moore ,  Tim Wisleder ,  Primit Parikh

发明人： Yifeng Wu ,  Marcia Moore ,  Tim Wisleder ,  Primit Parikh

IPC分类号： H01L29/66

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/402 ,  H01L29/66462

摘要： A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semiconductor device comprises providing a substrate and growing epitaxial layers on the substrate. Negative ions are introduced into the epitaxial layers to form a negative ion region to counter operating electric (E) fields in the semiconductor device. Contacts can be deposited on the epitaxial layers, either before or after formation of the negative ion region.

摘要翻译： 具有多个外延层并经历操作（E）场的半导体器件，特别是高电子迁移率晶体管（HEMT）。 在外延层中的负离子区域以对抗操作（E）场。 制造半导体器件的一种方法包括在衬底上提供衬底和生长外延层。 将负离子引入外延层中以形成负离子区域以对抗半导体器件中的电（E）场。 可以在形成负离子区之前或之后将触点沉积在外延层上。

公开(公告)号：US08642470B2

公开(公告)日：2014-02-04

申请号：US13316192

申请日：2011-12-09

申请人： Yu Bao

发明人： Yu Bao

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L23/5222 ,  H01L21/76807 ,  H01L21/7682 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device manufacturing method. This method comprises: etching a first dielectric layer to form a recess; depositing a second dielectric layer over said first dielectric layer and said recess, such that said recess is enclosed by said first dielectric layer and said second dielectric layer to form an air gap; and performing etching, such that a first trench is formed in said first dielectric layer and said second dielectric layer, adjacent to said air gap. The first trench can be filled with a conductive material to form wiring.

摘要翻译： 本发明提供一种半导体器件制造方法。 该方法包括：蚀刻第一介电层以形成凹部; 在所述第一介电层和所述凹部上沉积第二电介质层，使得所述凹部被所述第一介电层和所述第二介电层包围以形成气隙; 并且执行蚀刻，使得在所述第一介电层和所述第二电介质层中形成与所述气隙相邻的第一沟槽。 可以用导电材料填充第一沟槽以形成布线。

公开(公告)号：US08623445B2

公开(公告)日：2014-01-07

申请号：US12616375

申请日：2009-11-11

申请人： Qingnong Nelson Tang

发明人： Qingnong Nelson Tang

IPC分类号： A23J1/00

CPC分类号： A23J1/14 ,  C07K14/415

摘要： Protein concentrates and protein isolates, in addition to processes for the production of protein concentrates and protein isolates, are disclosed. In particular, the disclosure relates to the removal of fiber from an oilseed meal using low g-force centrifugation.

摘要翻译： 公开了除蛋白质浓缩物和蛋白质分离物的生产方法之外的蛋白质浓缩物和蛋白质分离物。 特别地，本公开涉及使用低g力离心从油籽粉中去除纤维。

公开(公告)号：US08598609B2

公开(公告)日：2013-12-03

申请号：US13071349

申请日：2011-03-24

申请人： James Ibbetson ,  Ting Li ,  Monica Hansen

发明人： James Ibbetson ,  Ting Li ,  Monica Hansen

IPC分类号： H01L33/00

CPC分类号： H01L33/10 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

摘要翻译： 一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。 所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。 第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。

公开(公告)号：US08580695B2

公开(公告)日：2013-11-12

申请号：US13310624

申请日：2011-12-02

申请人： Huanxin Liu

发明人： Huanxin Liu

IPC分类号： H01L21/302

CPC分类号： H01L21/3083 ,  H01L21/02238 ,  H01L21/30608 ,  H01L29/66636 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device for improving the performance of “Σ” shaped embedded source/drain regions is disclosed. A “U” shaped recess is formed in a Si substrate. The recess is treated with a surfactant, the amount of surfactant adsorbed on the recess sidewalls being greater than that on the recess bottom. An oxide is formed on the bottom. The presence of surfactant on the sidewalls, prevents oxide from forming thereon. The surfactant on the sidewalls is then removed and an orientation selective wet etching process is performed on the sidewalls. The oxide protects the Si at the bottom is from being etched.

摘要翻译： 公开了制造用于提高“Sigma”形嵌入式源/漏区的性能的半导体器件的方法。 在“硅”衬底中形成“U”形凹槽。 用表面活性剂处理凹槽，吸附在凹陷侧壁上的表面活性剂的量大于凹槽底部的表面活性剂的量。 在底部形成氧化物。 在侧壁上存在表面活性剂，防止在其上形成氧化物。 然后去除侧壁上的表面活性剂，并在侧壁上进行取向选择性湿蚀刻工艺。 氧化物保护底部的Si不被蚀刻。

公开(公告)号：US08575633B2

公开(公告)日：2013-11-05

申请号：US12329713

申请日：2008-12-08

申请人： Matthew Donofrio ,  Hua-Shuang Kong ,  David Slater, Jr. ,  John Edmond

发明人： Matthew Donofrio ,  Hua-Shuang Kong ,  David Slater, Jr. ,  John Edmond

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L31/12

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/46

摘要： A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.

摘要翻译： 公开了一种包括有源区和多个外表面的发光二极管。 光增强特征存在于二极管的一个外表面的至少一部分上，光增强特征选自由成形和纹理组成的组。 在二极管的每个其它外表面的至少一部分上存在光增强特征，这些光增强特征选自由成形，纹理和反射器组成的组。

公开(公告)号：US08535907B2

公开(公告)日：2013-09-17

申请号：US12927299

申请日：2010-11-10

申请人： Qingnong Nelson Tang

发明人： Qingnong Nelson Tang

IPC分类号： C12P21/06

CPC分类号： C12P21/06 ,  A23J1/14 ,  A23J3/14 ,  A23J3/346 ,  C07K1/14 ,  C12Y304/21001

摘要： Protein concentrates and protein isolates, in addition to processes for the production of protein concentrates and protein isolates, are disclosed. In particular, the disclosure relates to the removal of fiber from a toasted oilseed meal using low g-force centrifugation.

摘要翻译： 公开了除蛋白质浓缩物和蛋白质分离物的生产方法之外的蛋白质浓缩物和蛋白质分离物。 特别地，本公开涉及使用低g力离心从烘烤的油籽粉中除去纤维。

公开(公告)号：US08485014B2

公开(公告)日：2013-07-16

申请号：US13012676

申请日：2011-01-24

申请人： Colin Stocks ,  James Hobby ,  Martin Lopez ,  Chris Edwards

发明人： Colin Stocks ,  James Hobby ,  Martin Lopez ,  Chris Edwards

IPC分类号： G01N27/74 ,  G01N27/76 ,  G01D3/06 ,  G01L25/00 ,  G01P21/00

CPC分类号： G01N27/74

摘要： Provided are apparatus and methods for compensation of mechanical imbalance in a measurement apparatus, that provides options for increased accuracy and/or less expensive manufacture of a torsion balance. Orientation measurements are taken and an imbalance torque about the torsion spring's axis of rotation is determined, and used to calculate a compensation. The measurement apparatus of one embodiment includes a test body and a set of magnets for generating a first disturbing force on the test body in response to a paramagnetic gas. A conductor element in the magnetic field receives an electrical current that generates a second opposing force to the test body, under feedback control that varies the current until the test body achieves a balanced null position. The control signal required to achieve the fixed null position is measured. Corrections are then made for an imbalance mass by measuring the orientation of the apparatus relative to an acceleration or gravitational field and determining the imbalance torque resulting from the imbalance mass. Use of the invention can improve accuracy or reduce the cost of manufacture of a torsion balance, by enabling compensation for imbalances.

摘要翻译： 提供了用于补偿测量装置中的机械不平衡的装置和方法，其提供用于增加扭矩平衡的精度和/或较便宜的制造的选项。 进行取向测量，并且确定扭转弹簧的旋转轴线的不平衡扭矩，并用于计算补偿。 一个实施例的测量装置包括测试体和用于响应于顺磁性气体在测试体上产生第一干扰力的一组磁体。 在反应控制下，磁场中的导体元件接收产生与测试体相反的第二力的电流，该反馈控制改变电流，直到测试体达到平衡零位置。 测量实现固定零点位置所需的控制信号。 然后通过测量装置相对于加速度或重力场的取向并确定由不平衡质量产生的不平衡扭矩来对不平衡质量进行校正。 通过实现对不平衡的补偿，本发明的使用可以提高精度或降低制造扭转平衡的成本。

公开(公告)号：US08467844B2

公开(公告)日：2013-06-18

申请号：US12887427

申请日：2010-09-21

申请人： James Lee Rea ,  Stephen W. Blakely

发明人： James Lee Rea ,  Stephen W. Blakely

IPC分类号： H01R43/00

CPC分类号： A61B5/0492 ,  A61B5/04886 ,  A61B5/6853 ,  A61M16/04 ,  A61M16/0434 ,  A61M2230/60

摘要： Laryngeal surface electrodes are devices designed to hold a conductive surface against the vocal cords in order to pick up small electrical signals from the muscle known as electromyographic signals. Several embodiments of a laryngeal electromyography tube include a conductive electrode surface that is painted, screen printed or otherwise applied directly onto the body of an endotracheal tube, such that the final device has no raised surfaces which can injure the vocal cords. These endotracheal tube with integral laryngeal surface electrodes can be safely used placed for prolonged, continuous monitoring during surgery, after surgery and during intensive care treatment intubation without a need to remove and replace the tube at these various stages of treatment. In one embodiment, one electrode contacts the vocal cords and a second electrode contacts the tongue.

摘要翻译： 喉表面电极是设计用于将导电表面保持抵靠声带的装置，以便从称为肌电图信号的肌肉拾取小的电信号。 喉部肌电描记管的几个实施例包括导电电极表面，其被喷涂，丝网印刷或以其它方式直接施加到气管内管的主体上，使得最终装置没有可能损伤声带的凸起表面。 这些具有整体喉表面电极的气管内管可以安全地放置在手术期间，手术后和在重症监护处理插管期间进行长时间连续监测，而不需要在这些不同的治疗阶段移除和更换管。 在一个实施例中，一个电极接触声带并且第二电极接触舌头。