公开(公告)号：US06307218B1

公开(公告)日：2001-10-23

申请号：US09196928

申请日：1998-11-20

Applicant: Daniel A. Steigerwald ,  Serge L Rudaz ,  Kyle J. Thomas ,  Steven D. Lester ,  Paul S. Martin ,  William R. Imler ,  Robert M. Fletcher ,  Fred A. Kish, Jr. ,  Steven A. Maranowski

Inventor： Daniel A. Steigerwald ,  Serge L Rudaz ,  Kyle J. Thomas ,  Steven D. Lester ,  Paul S. Martin ,  William R. Imler ,  Robert M. Fletcher ,  Fred A. Kish, Jr. ,  Steven A. Maranowski

IPC: H01L3300

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.

Abstract translation: 发光器件包括具有p型层和n型层的异质结。 n电极与n型层电连接，而p电极与p型层电连接。 p和n电极被定位成形成具有均匀光强度的区域。

公开(公告)号：US06229160B1

公开(公告)日：2001-05-08

申请号：US08868009

申请日：1997-06-03

Applicant: Michael R Krames ,  Fred A Kish, Jr. ,  Tun S Tan

Inventor： Michael R Krames ,  Fred A Kish, Jr. ,  Tun S Tan

IPC: H01L3300

CPC classification number: H01L33/20 ,  H01L33/02

Abstract: The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.

Abstract translation: 本发明是一种用于设计半导体发光器件的方法，使得侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以改善光提取 提高总光输出效率。 选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。 因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。

公开(公告)号：US5793062A

公开(公告)日：1998-08-11

申请号：US962944

申请日：1997-10-24

Applicant: Fred A. Kish, Jr. ,  Stephen A. Stockman

Inventor： Fred A. Kish, Jr. ,  Stephen A. Stockman

IPC: H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/00 ,  H01S3/08

CPC classification number: H01L33/10 ,  H01L21/24 ,  H01L33/20 ,  H01L33/22

Abstract: Methods for the fabrication of TS LED chips with improved light extraction and optics, particularly increased top surface emission, and the TS LEDs so fabricated are described. Non-absorbing DBRs within the chip permit the fabrication of the LEDs. The transparent DBRs redirect light away from absorbing regions such as contacts within the chip, increasing the light extraction efficiency of the LED. The non-absorbing DBRs can also redirect light toward the top surface of the chip, improving the amount of top surface emission and the on-axis intensity of the packaged LED. These benefits are accomplished with optically non-absorbing layers, maintaining the advantages of a TS LED, which advantages include .about.6 light escape cones, and improved multiple pass light extraction.