Abstract:
A coolerless photonic integrated circuit (PIC), such as a semiconductor electro-absorption modulator/laser (EML) or a coolerless optical transmitter photonic integrated circuit (TxPIC), may be operated over a wide temperature range at temperatures higher then room temperature without the need for ambient cooling or hermetic packaging. Since there is large scale integration of N optical transmission signal WDM channels on a TxPIC chip, a new DWDM system approach with novel sensing schemes and adaptive algorithms provides intelligent control of the PIC to optimize its performance and to allow optical transmitter and receiver modules in DWDM systems to operate uncooled. Moreover, the wavelength grid of the on-chip channel laser sources may thermally float within a WDM wavelength band where the individual emission wavelengths of the laser sources are not fixed to wavelength peaks along a standardized wavelength grid but rather may move about with changes in ambient temperature. However, control is maintained such that the channel spectral spacing between channels across multiple signal channels, whether such spacing is periodic or aperiodic, between adjacent laser sources in the thermally floating wavelength grid are maintained in a fixed relationship. Means are then provided at an optical receiver to discover and lock onto floating wavelength grid of transmitted WDM signals and thereafter demultiplex the transmitted WDM signals for OE conversion.
Abstract:
Consistent with the present disclosure, optical devices are provided along different optical paths in a photonic integrated circuit (PIC). The optical components have different optical losses associated therewith so that optical signals propagating in the optical paths have desired power levels, which may be uniform, for example.
Abstract:
A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
Abstract:
A method for reducing insertion loss in a transition region between a plurality of input or output waveguides to a free space coupler region in a photonic integrated circuit (PIC) includes the steps of forming a passivation layer over the waveguides and region and forming the passivation overlayer such that it monotonically increases in thickness through the transition region to the free space coupler region.
Abstract:
A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
Abstract:
An optical receiver photonic integrated circuit (RxFIC) comprises a semiconductor monolithic chip having an input to receive from an optical transmissior link a combined channel signal originating from an optical transmitter source and comprising a plurality of channel signals having different wavelengths forming a wavelength grid. An optical decorobiner is integrated in the chip and optically coupled to the input to receive the multiplexed channel signal and provide a decombined individual channel signal on an output waveguide of a plurality of such output waveguides provided from the optical decombiner. A plurality of photodetectors are also integrated in the chip and each photodetector is optically coupled to one of the output waveguides to receive a decombined channel signal and convert the channel signal to an electrical signal. A controller is coupled to receive a portion of the converted signals to determine at least one performance property of the signals and provide service channel signal as feedback about that property via the semiconductor monolithic chip to the optical transmitter source. The controller is coupled to an integrated optical service channel (OSC) on the chip that has a light source which is modulated by the service channel signal. The light source may he integrated on the chip. The optical service channel (OSC) is coupled as an input to the decombiner for transport off the chip to optical transmitter source.
Abstract:
An optical transmitter photonic integrated circuit (TxPIC) comprises a semiconductor monolithic chip with a plurality of optical signal channels where each channel comprises a modulated signal source. The output from the modulated signal sources are coupled to an input of an integrated optical combiner to form a WDM output signal for transmission off the TxPIC chip to an optical transmission link. An optical service channel (OSC) is also integrated on the TxPIC chip to receive a service signal from the optical receiver source which is also coupled the optical transmission link.
Abstract:
An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III–V compound, i.e., an Al-III–V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III–V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III–V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
Abstract:
A method of tuning optical components integrated on a monolithic chip, such as an optical transmitter photonic integrated circuit (TxPIC), is disclosed where a group of first optical components are each fabricated to have an operating wavelength approximating a wavelength on a standardized or predetermined wavelength grid and are each included with a local wavelength tuning component also integrated in the chip. Each of the first optical components is wavelength tuned through their local wavelength tuning component to achieve a closer wavelength response that approximates their wavelength on the wavelength grid.