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公开(公告)号：US06307218B1
公开(公告)日：2001-10-23
申请号：US09196928
申请日：1998-11-20
申请人： Daniel A. Steigerwald , Serge L Rudaz , Kyle J. Thomas , Steven D. Lester , Paul S. Martin , William R. Imler , Robert M. Fletcher , Fred A. Kish, Jr. , Steven A. Maranowski
发明人： Daniel A. Steigerwald , Serge L Rudaz , Kyle J. Thomas , Steven D. Lester , Paul S. Martin , William R. Imler , Robert M. Fletcher , Fred A. Kish, Jr. , Steven A. Maranowski
IPC分类号： H01L3300
摘要： A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.
摘要翻译： 发光器件包括具有p型层和n型层的异质结。 n电极与n型层电连接，而p电极与p型层电连接。 p和n电极被定位成形成具有均匀光强度的区域。
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公开(公告)号：US06876008B2
公开(公告)日：2005-04-05
申请号：US10632719
申请日：2003-07-31
IPC分类号： H01L33/62 , H05K3/34 , H01L29/22 , H01L29/207 , H01L29/227 , H01L33/00
CPC分类号： H01L33/62 , H01L24/73 , H01L25/167 , H01L33/64 , H01L2224/16145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/14 , H05K3/3442 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A device includes a submount, and a semiconductor light emitting device mounted on first and second conductive regions on a first side of the submount in a flip chip architecture configuration. The submount has third and fourth conductive regions on a second side of the submount. The third and fourth conductive regions may be used to solder the submount to structure such as a board, without the use of wire bonds. The first and third conductive regions are electrically connected by a first conductive layer and the second and fourth conductive regions are electrically connected by a second conductive layer. The first and second conductive layers may be disposed on the outside of the submount or within the submount.
摘要翻译： 一种器件包括底座和半导体发光器件，其以倒装芯片架构配置安装在子安装座的第一侧上的第一和第二导电区域上。 底座在次安装座的第二侧上具有第三和第四导电区域。 第三和第四导电区域可以用于将基座焊接到诸如板的结构，而不使用引线键合。 第一和第三导电区域通过第一导电层电连接，第二和第四导电区域由第二导电层电连接。 第一和第二导电层可以设置在子安装座的外部或者在底座内。
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3.发明授权Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting 有权通过激光熔化对晶片接合AlxGayInzN结构进行厚度裁剪公开(公告)号：US06280523B1
公开(公告)日：2001-08-28
申请号：US09245448
申请日：1999-02-05
IPC分类号： C30B2512
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/105 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/32341 , Y10S117/915
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。
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公开(公告)号：US07009213B2
公开(公告)日：2006-03-07
申请号：US10633054
申请日：2003-07-31
申请人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
发明人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/44 , H01L33/505 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.
摘要翻译： 一种器件包括结合到光学元件的发光半导体器件。 在一些实施例中，光学元件可以是细长的或成形的，以在与半导体发光器件和光学元件的中心轴线基本垂直的方向上引导由有源区域发射的光的一部分。 在一些实施例中，半导体发光器件和光学元件被定位在反射器中或与光导相邻。 光学元件可以通过在设置在光学元件和半导体发光器件之间的界面处的结合键合到第一半导体发光器件。 在一些实施方案中，该键基本上不含有机基粘合剂。
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公开(公告)号：US07276737B2
公开(公告)日：2007-10-02
申请号：US11328964
申请日：2006-01-09
申请人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
发明人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/44 , H01L33/505 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.
摘要翻译： 一种器件包括结合到光学元件的发光半导体器件。 在一些实施例中，光学元件可以是细长的或成形的，以在与半导体发光器件和光学元件的中心轴线基本垂直的方向上引导由有源区域发射的光的一部分。 在一些实施例中，半导体发光器件和光学元件被定位在反射器中或与光导相邻。 光学元件可以通过在设置在光学元件和半导体发光器件之间的界面处的结合键合到第一半导体发光器件。 在一些实施方案中，该键基本上不含有机基粘合剂。
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公开(公告)号：US06946309B2
公开(公告)日：2005-09-20
申请号：US10867936
申请日：2004-06-14
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译： 发光半导体器件包括包括有源区的层叠层。 有源区包括选自III-磷化物，III-砷化物及其合金的半导体。 对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。 电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。 在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。 因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。
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公开(公告)号：US07351599B2
公开(公告)日：2008-04-01
申请号：US11311961
申请日：2005-12-19
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L24/17 , H01L33/20 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/12041 , H01L2224/05599 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147
摘要： A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.
摘要翻译： 发光器件包括第一导电类型的第一半导体层，有源区和第二导电类型的第二半导体层。 第一和第二触点连接到第一和第二半导体层。 在一些实施例中，第一和第二触头中的至少一个具有大于3.5微米的厚度。 在一些实施例中，第一热提取层连接到第一和第二触点之一。 在一些实施例中，第一和第二触点中的一个通过具有大于宽度的长度的焊料互连件连接到基座。 在一些实施例中，底部填充物设置在子安装座和第一和第二互连件之一之间。
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公开(公告)号：US07048412B2
公开(公告)日：2006-05-23
申请号：US10166853
申请日：2002-06-10
IPC分类号： F21V7/00
CPC分类号： F21V29/51 , F21K9/68 , F21S41/147 , F21S41/335 , F21S45/47 , F21V7/09 , F21V29/77 , F21Y2101/00 , F21Y2107/30 , F21Y2107/40 , F21Y2115/10
摘要： A lamp has LED sources that are placed about a lamp axis in an axial arrangement. The lamp includes a post with post facets where the LED sources are mounted. The lamp includes a segmented reflector for guiding light from the LED sources. The segmented reflector includes reflective segments each of which is illuminated primarily by light from one of the post facets (e.g., one of the LED sources on the post facet). The LED sources may be made up of one or more LED dies. The LED dies may include optic-on-chip lenses to direct the light from each post facet to a corresponding reflective segment. The LED dies may be of different sizes and colors chosen to generate a particular far-field pattern.
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公开(公告)号：US20080142833A1
公开(公告)日：2008-06-19
申请号：US12028925
申请日：2008-02-11
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L2224/0603 , H01L2224/06102 , H01L2224/48091 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.
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公开(公告)号：US07348212B2
公开(公告)日：2008-03-25
申请号：US11226151
申请日：2005-09-13
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L2224/0603 , H01L2224/06102 , H01L2224/48091 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.
摘要翻译： 包括设置在n型区域和p型区域之间的发光层和电连接到n型区域和p型区域的触点的半导体发光器件连接到安装件。 任意图案化以覆盖半导体发光器件的面积的至少20％的金属层被镀在形成在安装件上的金属层或形成在其中一个触点上的金属层上。 电镀金属层可以替代其他已知的互连技术，例如柱状凸块。 半导体发光器件通过引起金属层的接触表面之间的相互扩散而物理连接到安装座。 在一些实施例中，在电镀金属层上形成焊料层，然后半导体发光器件通过加热焊料物理连接到安装座。
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