公开(公告)号：US08080825B2

公开(公告)日：2011-12-20

申请号：US12344438

申请日：2008-12-26

Applicant: Chang-Hun Han

Inventor： Chang-Hun Han

IPC: H01L31/02 ,  H01L31/0376 ,  H01L21/04

CPC classification number: H01L27/14634 ,  H01L27/14643 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.

Abstract translation: 图像传感器可以包括具有包括导线的电路的第一基板和形成在第一基板上和/或上方的硅层，以选择性地接触导线。 图像传感器可以包括在与硅层接触并且电连接到电线时结合到第一衬底的光电二极管。 可以实现每个单位像素具有复杂的电路而不降低光敏性。 还可以在设计中植入附加的片上电路。

公开(公告)号：US07994554B2

公开(公告)日：2011-08-09

申请号：US12437373

申请日：2009-05-07

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L23/02

CPC classification number: H01L27/14683 ,  H01L27/14603

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US20110045338A1

公开(公告)日：2011-02-24

申请号：US12745717

申请日：2009-03-03

Applicant: Yoon-Jung Bae ,  Pil-Kyu Park ,  Jong-Hwan Kim ,  Dong-Hun Han ,  Han-Ho Lee ,  Sang-Young Lee ,  Ji-Sang Yu ,  Hyun-Min Jang

Inventor： Yoon-Jung Bae ,  Pil-Kyu Park ,  Jong-Hwan Kim ,  Dong-Hun Han ,  Han-Ho Lee ,  Sang-Young Lee ,  Ji-Sang Yu ,  Hyun-Min Jang

IPC: H01M2/16

CPC classification number: H01M2/1653 ,  H01M2/1646 ,  H01M2/1686 ,  H01M10/052

Abstract: A separator includes a porous substrate having a plurality of pores; and a porous coating layer formed on at least one surface of the porous substrate and made of a mixture of a plurality of inorganic particles and a binder polymer, wherein the binder polymer includes a first polyvinylidene fluoride-based copolymer having solubility of 25 weight % or more with respect to acetone at 350 C; a second polyvinylidene fluoride-based copolymer having solubility of 10 weight % or less with respect to acetone at 350 C; and a polymer having a cyano group. This separator decelerates deterioration of life span of an electrochemical device, and prevents disintercalation of inorganic particles in the porous coating layer, thereby improving safety of the electrochemical device.

Abstract translation: 分离器包括具有多个孔的多孔基材; 以及形成在所述多孔基材的至少一个表面上并由多种无机颗粒和粘合剂聚合物的混合物制成的多孔涂层，其中所述粘合剂聚合物包括溶解度为25重量％的第一聚偏二氟乙烯基共聚物或 更多关于丙酮在350℃; 在350℃下相对于丙酮的溶解度为10重量％以下的第二聚偏二氟乙烯系共聚物; 和具有氰基的聚合物。 该分离器减缓电化学装置的使用寿命的恶化，并且防止多孔涂层中的无机颗粒的脱嵌，从而提高电化学装置的安全性。

公开(公告)号：US07827875B2

公开(公告)日：2010-11-09

申请号：US11718683

申请日：2005-11-07

Applicant: Sung Chol Lim ,  Gi Hun Han ,  Gi Hyok Han

Inventor： Sung Chol Lim ,  Gi Hun Han ,  Gi Hyok Han

IPC: F16H33/10

CPC classification number: F16H33/10 ,  Y10T74/1218

Abstract: An automatic transmission consisting of a planetary gear unit comprising in combination an input shaft (1), an input gear (2), a key planet gear (3), an output gear (4), an output shaft (5), a bearing planet gear (6), a rotating frame (7), a rotor (8), wherein the planet shaft is the rotor (8) having a certain inertia moment, so its revolving is equivalent to the precession of a gyroscope due to an external force wherein the precession-production external force is the load acting on the output shaft (5). Hence the revolutionary speed of the rotor (8) varies depending upon changes in the output load and the same holds true for the rotational speed of the output shaft (5), which makes the speed ratio spontaneously vary with changes in the outpot load. Accordingly, the transmission of the present invention operates at speed ratios spontaneously varying with changes in load, without any controlling operation.

Abstract translation: 一种由行星齿轮单元组成的自动变速器，其包括输入轴（1），输入齿轮（2），关键行星齿轮（3），输出齿轮（4），输出轴（5），轴承 行星齿轮（6），旋转框架（7），转子（8），其中行星轴是具有一定惯性矩的转子（8），因此其旋转等于由于外部的陀螺仪的旋进 力，其中进动产生外力是作用在输出轴（5）上的载荷。 因此，转子（8）的革命性速度根据输出负载的变化而变化，并且对于输出轴（5）的转速也是如此，这使得速度比随着排气负荷的变化而自发变化。 因此，本发明的变速器以不受任何控制操作而随负载变化而自发变化的速度比工作。

公开(公告)号：US07797006B2

公开(公告)日：2010-09-14

申请号：US11339649

申请日：2006-01-25

Applicant: Sang-Kyung Sung ,  Jea-Hun Han ,  Joon-Goo Park

Inventor： Sang-Kyung Sung ,  Jea-Hun Han ,  Joon-Goo Park

IPC: H04B7/00

CPC classification number: H04W84/08 ,  H04L65/4061 ,  H04W4/10 ,  H04W76/45

Abstract: A method and system for guaranteeing a seamless session when replacing a PoC terminal in a PoC system is provided, in which a currently busy PoC client can be replaced in an existing busy PoC session using a PoC compliant client capable of connecting the PoC session, thereby preventing a transmitted media stream of the running PoC session from being lost when the PoC client is replaced. The method includes transmitting, by an arbitrary PoC user, a message for replacing a terminal from a user terminal to a session management server while maintaining the session; receiving, by the session management server, the replacement request message, and transmitting an INVITE message to a terminal to be replaced, or a target terminal; and receiving, by the target terminal, the INVITE message, and media through an existing session. In a situation where there is a need to replace the PoC terminal according to change of the media for the PoC call, request of mobility, etc. by the PoC user, the user is allowed to make a continuous call. Thus, it is possible to improve QoE of the user and expand the markets for the PoC terminal and its services.

Abstract translation: 提供一种用于在PoC系统中替换PoC终端时保证无缝会话的方法和系统，其中可以使用能够连接PoC会话的PoC兼容客户端在现有的忙PoC会话中替换当前忙的PoC客户端，从而 当更换PoC客户端时，防止正在运行的PoC会话的传输媒体流丢失。 该方法包括：通过任意的PoC用户，在保持会话的同时，将终端从用户终端发送到会话管理服务器的消息; 由会话管理服务器接收替换请求消息，并向要更换的终端或目标终端发送INVITE消息; 并且由目标终端通过现有会话接收INVITE消息和媒体。 在需要根据PoC呼叫的媒体的变更，PoC用户请求移动性等需要更换PoC终端的情况下，允许用户进行连续呼叫。 因此，可以提高用户的QoE，扩大PoC终端及其服务的市场。

公开(公告)号：US20100110247A1

公开(公告)日：2010-05-06

申请号：US12610452

申请日：2009-11-02

Applicant: CHANG HUN HAN

Inventor： CHANG HUN HAN

IPC: H04N5/335 ,  H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H04N5/369

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a readout circuitry, an electrical junction region, a poly contact, an interconnection, and an image sensing device. The readout circuitry is formed on a first substrate. The electrical junction region is formed in the first substrate. The electrical junction region is electrically connected to the readout circuitry. The poly contact is formed on the electrical junction region. The interconnection is formed on the poly contact. The image sensing device is formed on the interconnection. The image sensing device is electrically connected to the readout circuitry through the interconnection, the poly contact, and the electrical junction region.

Abstract translation: 提供了一种图像传感器及其制造方法。 图像传感器包括读出电路，电接合区域，多接点，互连和图像感测设备。 读出电路形成在第一基板上。 电连接区形成在第一基板中。 电连接区域电连接到读出电路。 聚电接触形成在电连接区域上。 互连形成在聚触点上。 图像感测装置形成在互连上。 图像感测装置通过互连，多接触和电连接区域电连接到读出电路。

公开(公告)号：US20100103298A1

公开(公告)日：2010-04-29

申请号：US12574785

申请日：2009-10-07

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H04N5/335 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/14632 ,  H01L27/14643

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes readout circuitry and an inter-layer dielectric layer on a first substrate, a metal line in the inter-layer dielectric layer and electrically connected with the readout circuitry, a plurality of contact plugs on the metal line, and an image sensing device on the contact plugs. The image sensing device is electrically connected to the metal line through the plurality of contact plugs. The method for manufacturing an image sensor includes forming a readout circuitry on a first substrate, forming an inter-layer dielectric layer on the first substrate, forming a metal line in the inter-layer dielectric layer such that the metal line is electrically connected with the readout circuitry, forming a plurality of contact plugs on the metal line per unit pixel, and forming an image sensing device on the plurality of contact plugs.

Abstract translation: 公开了一种图像传感器及其制造方法。 图像传感器包括读出电路和第一衬底上的层间电介质层，层间电介质层中的金属线并与读出电路电连接，金属线上的多个接触插塞和图像感测 设备接触插头。 图像感测装置通过多个接触插塞电连接到金属线。 图像传感器的制造方法包括在第一基板上形成读出电路，在第一基板上形成层间电介质层，在层间电介质层中形成金属线，使金属线与 读出电路，在每单位像素的金属线上形成多个接触塞，以及在多个接触插塞上形成图像感测装置。

公开(公告)号：US20100025801A1

公开(公告)日：2010-02-04

申请号：US12501341

申请日：2009-07-10

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L31/101 ,  H01L31/18

CPC classification number: H01L27/14634 ,  H01L27/14603

Abstract: An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer.

Abstract translation: 图像传感器包括在第一基板上的读出电路，与读出电路电连接的金属线，金属线上的电介质，介质上的图像感测装置，包括第一和第二导电类型的层， 穿过图像感测装置的孔，以将第一导电类型层与金属线连接，以及在第二导电类型层的侧壁处的通孔中的侧壁电介质。

公开(公告)号：US07632730B2

公开(公告)日：2009-12-15

申请号：US12105493

申请日：2008-04-18

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/8238

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687

Abstract: A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor.

Abstract translation: 公开了CMOS图像传感器和制造方法。 晶体管的栅极形成在单位像素的有源区中，并且通过将杂质离子注入半导体衬底来限定用于光电二极管的扩散区。 作为抵抗离子注入的掩模层的光致抗蚀剂的图案以这样的方式形成在半导体衬底上，使得它们具有隔离层的边界部分，以便不使所定义的光电二极管的边界与 隔离层。 通过在光电二极管的扩散区域与隔离层之间的边界部分处的杂质的离子注入的损害被防止，这降低了COMS图像传感器的暗电流。

公开(公告)号：US20090189206A1

公开(公告)日：2009-07-30

申请号：US12379111

申请日：2009-02-12

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/112

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463

Abstract: A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.