公开(公告)号：US20090146205A1

公开(公告)日：2009-06-11

申请号：US12368265

申请日：2009-02-09

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L29/788

CPC classification number: H01L29/42324 ,  H01L29/40114

Abstract: Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface.

Abstract translation: 公开了一种闪存器件的浮动栅极，其中在半导体衬底上形成隧道氧化物层，并且浮栅形成为具有凸顶表面的透镜的形状。

公开(公告)号：US20100025801A1

公开(公告)日：2010-02-04

申请号：US12501341

申请日：2009-07-10

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L31/101 ,  H01L31/18

CPC classification number: H01L27/14634 ,  H01L27/14603

Abstract: An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer.

Abstract translation: 图像传感器包括在第一基板上的读出电路，与读出电路电连接的金属线，金属线上的电介质，介质上的图像感测装置，包括第一和第二导电类型的层， 穿过图像感测装置的孔，以将第一导电类型层与金属线连接，以及在第二导电类型层的侧壁处的通孔中的侧壁电介质。

公开(公告)号：US20090224298A1

公开(公告)日：2009-09-10

申请号：US12437373

申请日：2009-05-07

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L31/10

CPC classification number: H01L27/14683 ,  H01L27/14603

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US20140124843A1

公开(公告)日：2014-05-08

申请号：US13763397

申请日：2013-02-08

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L27/146

CPC classification number: H01L31/173 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/02019 ,  H01L31/103

Abstract: Disclosed is a photo sensor including a first conductive type semiconductor substrate, a photodiode region in a light receiving region of the semiconductor substrate, a first transistor including a first gate, a first source region and a first drain region, the first transistor being adjacent to the photodiode region, and a light-absorption control layer in a first region of the photodiode region, the light-absorption control layer exposing a second region of the photodiode region, wherein the first region is spaced apart from the first source region, and the second region is another portion of the photodiode region contacting the first source region.

Abstract translation: 公开了一种光传感器，包括第一导电类型半导体衬底，半导体衬底的光接收区域中的光电二极管区域，包括第一栅极，第一源极区域和第一漏极区域的第一晶体管，第一晶体管与 所述光电二极管区域和所述光电二极管区域的第一区域中的光吸收控制层，所述光吸收控制层暴露所述光电二极管区域的第二区域，其中所述第一区域与所述第一源极区域隔开， 第二区域是与第一源极区域接触的光电二极管区域的另一部分。

公开(公告)号：US20090090989A1

公开(公告)日：2009-04-09

申请号：US12241247

申请日：2008-09-30

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L31/0232 ,  H01L21/28

CPC classification number: H01L27/14621 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14687

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor can comprise: a semiconductor substrate, a first dielectric, a second dielectric pattern, a planarization layer, and a color filter. The semiconductor substrate comprises a photodiode. The first dielectric is disposed on the semiconductor substrate. The second dielectric pattern is disposed on the first dielectric and comprises a trench in a region corresponding to the photodiode. The planarization layer is disposed in the trench. The color filter is disposed on the planarization layer disposed on the photodiode.

Abstract translation: 提供了图像传感器及其制造方法。 图像传感器可以包括：半导体衬底，第一电介质，第二电介质图案，平坦化层和滤色器。 半导体衬底包括光电二极管。 第一电介质设置在半导体衬底上。 第二电介质图案设置在第一电介质上，并且在对应于光电二极管的区域中包括沟槽。 平坦化层设置在沟槽中。 滤色器设置在设置在光电二极管上的平坦化层上。

公开(公告)号：US20090085080A1

公开(公告)日：2009-04-02

申请号：US12234991

申请日：2008-09-22

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L27/14643 ,  H01L27/14636

Abstract: Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels.

Abstract translation: 公开了一种图像传感器。 图像传感器包括：包括单位像素的半导体衬底;在半导体衬底上形成有金属互连的层间绝缘层;对应于单位像素形成在层间绝缘层上的多个底部电极，多个底部电极包括底部电极 具有至少两种不同尺寸的光电二极管，形成在包括底部电极的层间电介质层上的光电二极管，以及与单位像素相对应的在光电二极管上形成的滤色器。