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    Mask ROM and fabrication thereof
    122.
    发明授权
    Mask ROM and fabrication thereof 有权
    掩模ROM及其制造

    公开(公告)号：US07064035B2

    公开(公告)日：2006-06-20

    申请号：US10888104

    申请日：2004-07-09

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/8236

    CPC classification number: H01L27/112 ,  H01L27/1124

    Abstract: A Mask ROM and a method for fabricating the same are described. The Mask ROM comprises a substrate, a plurality of gates on the substrate, a gate oxide layer between the gates and the substrate, a plurality of buried bit lines in the substrate between the gates, an insulator on the buried bit lines and between the gates, a plurality of word lines each disposed over a row of gates perpendicular to the buried bit lines, and a coding layer between the word lines and the gates.

    Abstract translation: 描述了掩模ROM及其制造方法。 掩模ROM包括衬底，衬底上的多个栅极，栅极和衬底之间的栅极氧化物层，在栅极之间的衬底中的多个掩埋位线，掩埋位线上的绝缘体和栅极之间 ，多个字线，各自设置在与掩埋位线垂直的一行栅极上，以及在字线和栅极之间的编码层。

    Immersion photolithography with megasonic rinse
    123.
    发明申请
    Immersion photolithography with megasonic rinse 有权
    浸没式光刻用超声波冲洗

    公开(公告)号：US20060110689A1

    公开(公告)日：2006-05-25

    申请号：US10995653

    申请日：2004-11-23

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/00

    CPC classification number: G03F7/2041 ,  G03F7/168 ,  H01L21/67051 ,  H01L21/67057

    Abstract: A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.

    Abstract translation: 一种方法包括在基底上形成光致抗蚀剂，使用用至少一个兆声源驱动的漂洗液冲洗光致抗蚀剂，在浸入液体中时将光致抗蚀剂暴露于辐射，并显影光致抗蚀剂。

    Development of photolithographic masks for semiconductors
    124.
    发明申请
    Development of photolithographic masks for semiconductors 审中-公开
    开发半导体光刻掩模

    公开(公告)号：US20050250054A1

    公开(公告)日：2005-11-10

    申请号：US10937177

    申请日：2004-09-09

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40

    CPC classification number: G03F7/40 ,  G03F7/2041

    Abstract: A method of forming a photolithographic mask for use in fabricating a semiconductor device is provided. The method includes forming a layer of photoresist material on a wafer and exposing the photoresist material to a light source. The photoresist material is developed, and before the wafer dries, the wafer is cleaned with one or more cleaning liquids. The cleaning liquid may be a surfactant, an acid, a dissolved gas solution (e.g., CO2, SO2, SO3, NH3, NO2, or the like), deionized water, or the like. Thereafter, the wafer is dried. The wafer may be dried, for example, by a spin dry process, a gas purge process using, for example, compressed dry air, N2, CO2, Ar, or the like, or a drying alcohol such as IPA vapor.

    Abstract translation: 提供一种形成用于制造半导体器件的光刻掩模的方法。 该方法包括在晶片上形成光致抗蚀剂材料层并将光致抗蚀剂材料暴露于光源。 显影光致抗蚀剂材料，并且在晶片干燥之前，用一种或多种清洁液体清洁晶片。 清洗液体可以是表面活性剂，酸，溶解气体溶液（例如CO 2，SO 2，SO 3，NH 3， SUB> 3，NO 2 2等），去离子水等。 此后，将晶片干燥。 可以例如通过旋转干燥方法干燥晶片，使用例如压缩干燥空气，N 2，CO 2，Ar， 或诸如IPA蒸气的干燥醇。

    Non-volatile memory and fabricating method thereof
    125.
    发明授权
    Non-volatile memory and fabricating method thereof 有权
    非易失性存储器及其制造方法

    公开(公告)号：US06806535B2

    公开(公告)日：2004-10-19

    申请号：US10248467

    申请日：2003-01-22

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L2976

    CPC classification number: H01L27/1126 ,  H01L27/112

    Abstract: A method of fabricating a non-volatile memory is provided. A longitudinal strip of stacked layer is formed over a substrate. The longitudinal strip is a stacked layer including a gate dielectric layer, a conductive layer and a cap layer. A buried bit line is formed in the substrate on each side of the longitudinal strip. The longitudinal strip is patterned to form a plurality of stacked blocks. Thereafter, a dielectric layer is formed over the substrate. The dielectric layer exposes the cap layer of the stacked blocks. Some cap layers of the stacked blocks are removed to expose the conductive layer underneath. A word line is formed over the dielectric layer to connect stacked blocks in the same row serially together.

    Abstract translation: 提供了一种制造非易失性存储器的方法。 堆叠层的纵向条形成在衬底上。 纵向条是包括栅介电层，导电层和盖层的堆叠层。 在纵向条的每一侧上的基板中形成掩埋位线。 图案化纵向条以形成多个堆叠的块。 此后，在衬底上形成电介质层。 电介质层暴露堆叠块的盖层。 去除堆叠块的一些盖层以露出下面的导电层。 在电介质层上形成一个字线，以将串联在同一行中的堆叠块连接起来。

    Method of enhancing photoresist anti-etching ability
    126.
    发明授权
    Method of enhancing photoresist anti-etching ability 有权
    提高光刻胶抗蚀刻能力的方法

    公开(公告)号：US06632587B2

    公开(公告)日：2003-10-14

    申请号：US09861623

    申请日：2001-05-22

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F726

    CPC classification number: G03F7/40 ,  Y10S430/143

    Abstract: A method of enhancing photoresist anti-etching ability, at least includes follows. Provide a substrate, form a photoresist with a pattern on the substrate, put both photoresist and substrate in a low pressure environment, and treat photoresist by an electron beam to let at least part of photoresist is hardened. This method usually is performed before etch process, but the method also could be modified as follows. Expose photoresist by an electron beam while an etching process being performed, or alternately expose photoresist by an electron beam and perform an etch process.

    Abstract translation: 至少包括如下的增强抗蚀剂抗蚀刻能力的方法。 提供基板，在基板上形成具有图案的光致抗蚀剂，将光致抗蚀剂和基板放置在低压环境中，并通过电子束处理光致抗蚀剂以使至少部分光致抗蚀剂硬化。 该方法通常在蚀刻处理之前进行，但是也可以如下进行修改。 当进行蚀刻处理时，通过电子束曝光光致抗蚀剂，或者通过电子束交替地曝光光致抗蚀剂并进行蚀刻处理。

    Method of forming a slope lateral structure
    127.
    发明授权
    Method of forming a slope lateral structure 有权
    形成斜坡侧向结构的方法

    公开(公告)号：US06489251B2

    公开(公告)日：2002-12-03

    申请号：US09777877

    申请日：2001-02-07

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21302

    CPC classification number: H01L27/11253 ,  H01L27/112 ,  H01L27/1122

    Abstract: The present invention discloses a method of forming a slope lateral structure. In this invention, the silicon nitride and the silicon hydroxide with different etching rates are used. Thus, when the silicon nitride is etching, the top and laterals portion of the silicon hydroxide is suffering the slight etching. So that, when the silicon nitride is etched completely, a slope lateral silicon hydroxide is formed, because of the different etching time on the top and the bottom portion of the silicon hydroxide. Using the present invention, the conventional NROM process problem, which the wordlines are connected by the residue on the laterals of the protective layer after etching process can be solved.

    Abstract translation: 本发明公开了一种形成倾斜侧面结构的方法。 在本发明中，使用具有不同蚀刻速率的氮化硅和氢氧化硅。 因此，当氮化硅蚀刻时，氢氧化硅的顶部和侧面部分遭受轻微蚀刻。 因此，当氮化硅被完全蚀刻时，由于氢氧化硅的顶部和底部上的蚀刻时间不同，因此形成斜面侧向氢氧化硅。 使用本发明，可以解决在蚀刻处理之后，保护层的边缘上的残留物与字线连接的常规NROM工艺问题。

    Method of cleaning a wafer
    128.
    发明授权
    Method of cleaning a wafer 有权
    清洗晶片的方法

    公开(公告)号：US06423147B1

    公开(公告)日：2002-07-23

    申请号：US09682134

    申请日：2001-07-26

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: B08B300

    CPC classification number: H01L21/02052 ,  B08B3/08 ,  H01L21/321 ,  Y10S134/902

    Abstract: A method of removing small particles remaining on a surface of a semiconductor wafer and preventing a silicide layer covering the semiconductor wafer from corroding starts by controlling a temperature of the semiconductor wafer to between room temperature and 45° C. Then, a cleaning solution of a temperature between 0° C. and 45° C. is utilized to clean the semiconductor wafer to effectively remove small particles remaining on the surface of the semiconductor wafer and prevent the silicide layer from corrosion by the cleaning solution. Therein, the cleaning solution is comprised of a pre-determined volume ratio of hydrogen peroxide (H2O2), ammonia (NH4OH), and deionized water.

    Abstract translation: 通过将半导体晶片的温度控制在室温和45℃之间，去除残留在半导体晶片表面上的小颗粒并防止覆盖半导体晶片的硅化物层腐蚀开始的方法。然后， 使用0℃至45℃之间的温度来清洁半导体晶片以有效地去除残留在半导体晶片表面上的小颗粒，并防止硅化物层被清洁溶液腐蚀。 其中，清洁溶液由预定体积比的过氧化氢（H 2 O 2），氨（NH 4 OH）和去离子水组成。

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