Buffer circuit with adaptive repair capability

    公开(公告)号:US11527302B2

    公开(公告)日:2022-12-13

    申请号:US17368018

    申请日:2021-07-06

    Applicant: Rambus Inc.

    Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

    Stacked Semiconductor Device Assembly in Computer System

    公开(公告)号:US20220318172A1

    公开(公告)日:2022-10-06

    申请号:US17718168

    申请日:2022-04-11

    Applicant: Rambus Inc.

    Inventor: Scott C. Best

    Abstract: This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.

    Forwarding signal supply voltage in data transmission system

    公开(公告)号:US11282549B2

    公开(公告)日:2022-03-22

    申请号:US17068505

    申请日:2020-10-12

    Applicant: Rambus Inc.

    Abstract: In a data transmission system, one or more signal supply voltages for generating the signaling voltage of a signal to be transmitted are generated in a first circuit and forwarded from the first circuit to a second circuit. The second circuit may use the forwarded signal supply voltages to generate another signal to be transmitted back from the second circuit to the first circuit, thereby obviating the need to generate signal supply voltages separately in the second circuit. The first circuit may also adjust the signal supply voltages based on the signal transmitted back from the second circuit to the first circuit. The data transmission system may employ a single-ended signaling system in which the signaling voltage is referenced to a reference voltage that is a power supply voltage such as ground, shared by the first circuit and the second circuit.

    MEMORY MODULE AND SYSTEM SUPPORTING PARALLEL AND SERIAL ACCESS MODES

    公开(公告)号:US20210350838A1

    公开(公告)日:2021-11-11

    申请号:US17328211

    申请日:2021-05-24

    Applicant: Rambus Inc.

    Abstract: A memory module can be programmed to deliver relatively wide, low-latency data in a first access mode, or to sacrifice some latency in return for a narrower data width, a narrower command width, or both, in a second access mode. The narrow, higher-latency mode requires fewer connections and traces. A controller can therefore support more modules, and thus increased system capacity. Programmable modules thus allow computer manufacturers to strike a desired balance between memory latency, capacity, and cost.

    Memory Systems, Modules, and Methods for Improved Capacity

    公开(公告)号:US20210294531A1

    公开(公告)日:2021-09-23

    申请号:US17235629

    申请日:2021-04-20

    Applicant: Rambus Inc.

    Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. The memory module additionally includes a command input port to receive command and address signals from a controller and, also in support of capacity extensions, a command relay circuit coupled to the command port to convey the commands and addresses from the memory module to another module or modules. Relaying commands and addresses introduces a delay, and the buffer system that manages communication between the memory controller and the memory devices can be configured to time data communication to account for that delay.

    Memory module and system supporting parallel and serial access modes

    公开(公告)号:US11049532B2

    公开(公告)日:2021-06-29

    申请号:US15721755

    申请日:2017-09-30

    Applicant: Rambus Inc.

    Abstract: A memory module can be programmed to deliver relatively wide, low-latency data in a first access mode, or to sacrifice some latency in return for a narrower data width, a narrower command width, or both, in a second access mode. The narrow, higher-latency mode requires fewer connections and traces. A controller can therefore support more modules, and thus increased system capacity. Programmable modules thus allow computer manufacturers to strike a desired balance between memory latency, capacity, and cost.

    MULTI-DIE MEMORY DEVICE
    127.
    发明申请

    公开(公告)号:US20200321047A1

    公开(公告)日:2020-10-08

    申请号:US16823122

    申请日:2020-03-18

    Applicant: Rambus Inc.

    Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

    Strobe-offset control circuit
    128.
    发明授权

    公开(公告)号:US10741237B2

    公开(公告)日:2020-08-11

    申请号:US16106355

    申请日:2018-08-21

    Applicant: Rambus Inc.

    Inventor: Scott C. Best

    Abstract: A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal.

    Multi-die memory device
    129.
    发明授权

    公开(公告)号:US10607691B2

    公开(公告)日:2020-03-31

    申请号:US16211966

    申请日:2018-12-06

    Applicant: Rambus Inc.

    Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

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