公开(公告)号：US07419545B2

公开(公告)日：2008-09-02

申请号：US10599035

申请日：2005-12-26

申请人： Yasuo Kitaoka ,  Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Minoru Kawahara

发明人： Yasuo Kitaoka ,  Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Minoru Kawahara

IPC分类号： C30B15/20

CPC分类号： C30B29/36 ,  C30B9/00 ,  C30B9/10 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG. 3B is an example of a silicon carbide single crystal obtained by the method of the present invention.

摘要翻译： 本发明提供可以以低成本制造大型碳化硅（SiC）单晶的制造方法。 通过使硅（Si）和碳（C）在碱金属助熔剂中溶解和反应来生产或生长碳化硅单晶。 碱金属优选为锂（Li）。 通过该方法，即使在例如1500℃以下的低温条件下也可以制造碳化硅单晶。 图的照片 图3B是通过本发明的方法获得的碳化硅单晶的实例。

公开(公告)号：US07381268B2

公开(公告)日：2008-06-03

申请号：US10587223

申请日：2005-04-27

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

公开(公告)号：US07255742B2

公开(公告)日：2007-08-14

申请号：US10884252

申请日：2004-07-02

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B29/403 ,  C30B19/04 ,  C30B19/06 ,  C30B29/406

摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured efficiently, and are useful and usable as a substrate for semiconductor manufacturing processes. A semiconductor layer that is made of a semiconductor and includes crystal-nucleus generation regions at its surface is formed. The semiconductor is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1). Group III nitride crystals then are grown on the semiconductor layer by bringing the crystal-nucleus generation regions of the semiconductor layer into contact with a melt in an atmosphere including nitrogen. The melt contains nitrogen, at least one Group III element selected from the group consisting of gallium, aluminum, and indium, and at least one of alkali metal and alkaline-earth metal.

摘要翻译： 本发明提供一种制造高品质的III族氮化物晶体的方法，其有效制造，并且可用作半导体制造工艺的基板。 形成由半导体构成的半导体层，其表面具有晶核生成区域。 半导体由以下组成式表示：在1-uv N中（其中0 <= u <= 1,0，...， <= v <= 1，u + v <= 1）。 然后通过在包括氮气的气氛中使半导体层的晶核生成区域与熔体接触，在半导体层上生长III族氮化物晶体。 熔体含有氮，至少一种选自镓，铝和铟的III族元素，以及碱金属和碱土金属中的至少一种。

公开(公告)号：US20050011432A1

公开(公告)日：2005-01-20

申请号：US10884252

申请日：2004-07-02

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/04 ,  C30B19/06 ,  C30B19/00

CPC分类号： C30B29/403 ,  C30B19/04 ,  C30B19/06 ,  C30B29/406

摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured efficiently, and are useful and usable as a substrate for semiconductor manufacturing processes. A semiconductor layer that is made of a semiconductor and includes crystal-nucleus generation regions at its surface is formed. The semiconductor is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1). Group III nitride crystals then are grown on the semiconductor layer by bringing the crystal-nucleus generation regions of the semiconductor layer into contact with a melt in an atmosphere including nitrogen. The melt contains nitrogen, at least one Group III element selected from the group consisting of gallium, aluminum, and indium, and at least one of alkali metal and alkaline-earth metal.

摘要翻译： 本发明提供一种制造高品质的III族氮化物晶体的方法，其有效制造，并且可用作半导体制造工艺的基板。 形成由半导体构成的半导体层，其表面具有晶核生成区域。 半导体由AluGavIn1-u-vN的组成式表示（其中0 <= u <= 1,0 <= v <= 1，u + v <= 1）。 然后通过在包括氮气的气氛中使半导体层的晶核生成区域与熔体接触，在半导体层上生长III族氮化物晶体。 熔体含有氮，至少一种选自镓，铝和铟的III族元素，以及碱金属和碱土金属中的至少一种。

公开(公告)号：US06130901A

公开(公告)日：2000-10-10

申请号：US73888

申请日：1998-05-06

申请人： Kouichi Takamine ,  Hiroyuki Yamaguchi ,  Yasuo Kitaoka

发明人： Kouichi Takamine ,  Hiroyuki Yamaguchi ,  Yasuo Kitaoka

IPC分类号： H01S5/06 ,  H01S5/0625 ,  H01S5/0683 ,  H01S3/10 ,  H01S3/00 ,  H01S3/13 ,  H01S5/00

CPC分类号： H01S5/0687 ,  H01S5/005 ,  H01S5/0092 ,  H01S5/0612 ,  H01S5/06256

摘要： The SHG laser stabilizing control device of this invention has: an SHG laser having a semiconductor laser having a wavelength which changes in a step-wise manner in response to a change in a wavelength-changeable current and a wavelength conversion element which converts the wavelength of output light of the semiconductor laser into a shorter wavelength; an optical detection section for detecting a step-wise change in the wavelength of output light of the SHG laser; a current changing section which changes the wavelength-changeable current supplied to the semiconductor laser in order to change the wavelength of the semiconductor laser; and a wavelength-changeable current control section which obtains a gap current value of the wavelength-changeable current at which the step-wise change in the wavelength is detected by the optical detection section and adds or subtracts a predetermined current value to or from the gap current value to set a wavelength-changeable current value.

摘要翻译： 本发明的SHG激光稳定控制装置具有：SHG激光器，其具有响应于波长可变电流的变化而具有以逐步方式变化的波长的半导体激光器和将波长可变电流的波长转换的波长转换元件 将半导体激光器的输出光输入较短的波长; 用于检测SHG激光器的输出光的波长的逐步变化的光学检测部分; 电流改变部分，改变提供给半导体激光器的波长可变电流，以改变半导体激光器的波长; 以及波长可变电流控制部，其获得由所述光检测部检测出所述波长的逐级变化的所述波长可变电流的间隙电流值，并且对所述间隙添加或减去所述预定电流值 当前值设置波长可变电流值。