公开(公告)号：US20120074376A1

公开(公告)日：2012-03-29

申请号：US13312061

申请日：2011-12-06

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L47/00

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US08097878B2

公开(公告)日：2012-01-17

申请号：US11714326

申请日：2007-03-05

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L29/12 ,  H01L29/02

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US08004198B2

公开(公告)日：2011-08-23

申请号：US12474080

申请日：2009-05-28

Applicant: Shashank Bakre ,  Nitin Kumar

Inventor： Shashank Bakre ,  Nitin Kumar

IPC: H05B37/02

CPC classification number: H05B41/2981 ,  H05B37/04

Abstract: A ballast for driving one or more lamps includes a controller and a current reduction circuit for accelerating a controller reset. Upon detecting a fault, the controller disables the ballast for a preset period of time, and resets. The controller additionally resets when the ratio of a supplied second value to a supplied first value falls below a threshold value. The current reduction circuit reduces the supplied second value in less than the preset period of time, such that the ratio falls below the threshold value and the controller resets. An emergency lighting system includes the ballast as a primary ballast, a backup ballast, and a primary power source. The controller detects a fault if the primary power source de-energizes and the backup ballast disconnects the one or more lamps from the primary ballast. The current reduction circuit accelerates the reset of the controller when the primary power source de-energizes.

Abstract translation: 用于驱动一个或多个灯的镇流器包括用于加速控制器复位的控制器和电流减小电路。 检测到故障后，控制器会在预设的时间段内关闭镇流器，并重置。 当提供的第二值与所提供的第一值的比率低于阈值时，控制器另外复位。 电流减小电路在小于预设时间段内减小提供的第二值，使得该比率低于阈值并且控制器复位。 应急照​​明系统包括镇流器作为主要镇流器，备用镇流器和主电源。 如果主电源断电，并且备用镇流器将一个或多个灯与主镇流器断开连接，则控制器将检测故障。 当主电源断电时，电流降低电路加速了控制器的复位。

公开(公告)号：US20110194557A1

公开(公告)日：2011-08-11

申请号：US12702718

申请日：2010-02-09

Applicant: Alex Baban ,  Jean-Marc Frailong ,  Kireeti Kompella ,  Nitin Kumar ,  Jamsheed Wania ,  Murtuza Attarwala

Inventor： Alex Baban ,  Jean-Marc Frailong ,  Kireeti Kompella ,  Nitin Kumar ,  Jamsheed Wania ,  Murtuza Attarwala

IPC: H04L12/56

CPC classification number: H04L12/18 ,  H04L45/16 ,  H04L49/10 ,  H04L49/201

Abstract: A network device receives a packet with a multicast nexthop identifier, and creates a mask that includes addresses of egress packet forwarding engines, of the network device, to which to provide the packet. The network device divides the mask into two portions, generates two copies of the packet, provides a first portion of the mask in a first copy of the packet, and provides a second portion of the mask in a second copy of the packet. The network device also forwards the first copy of the packet to an address of a first egress packet forwarding engine provided in the first portion of the mask, and forwards the second copy of the packet to an address of a second egress packet forwarding engine provided in the second portion of the mask.

Abstract translation: 网络设备接收具有多播下一标识符的分组，并创建包括提供分组的网络设备的出站分组转发引擎的地址的掩码。 网络设备将掩码分成两部分，生成分组的两个副本，在分组的第一副本中提供该掩码的第一部分，并在分组的第二副本中提供该掩码的第二部分。 网络设备还将分组的第一副本转发到在掩码的第一部分中提供的第一出口分组转发引擎的地址，并将分组的第二副本转发到提供的第二出口分组转发引擎的地址 掩模的第二部分。

公开(公告)号：US20100301754A1

公开(公告)日：2010-12-02

申请号：US12474049

申请日：2009-05-28

Applicant: Shashank Bakre ,  Nitin Kumar

Inventor： Shashank Bakre ,  Nitin Kumar

IPC: H05B37/02

CPC classification number: H05B41/28 ,  H05B41/295 ,  H05B41/42

Abstract: A control circuit for use in a ballast configured for powering a first lamp set and a second lamp set. The second lamp set is operated via a controller and a second lamp driver circuit. The controller enables the second lamp driver circuit as a function of a monitored value corresponding to a current through a lamp of the second lamp set. The control circuit includes first and second input terminals for selectively connecting to the power supply. The control circuit reduces the monitored value as a function of a connection state of the first and second input terminals of the control circuit to the power supply. Thus, the control circuit causes the controller to selectively operate the second lamp driver circuit in order to energize the second lamp set in combination with the first lamp set.

Abstract translation: 一种用于镇流器的控制电路，其配置用于为第一灯组和第二灯组供电。 第二灯组通过控制器和第二灯驱动器电路操作。 控制器使得第二灯驱动器电路作为与通过第二灯组的灯的电流相对应的监视值的函数。 控制电路包括用于选择性地连接到电源的第一和第二输入端子。 控制电路根据控制电路的第一和第二输入端子与电源的连接状态来减小监视值。 因此，控制电路使得控制器选择性地操作第二灯驱动器电路，以便与第一灯组组合激励第二灯组。

公开(公告)号：US07830096B2

公开(公告)日：2010-11-09

申请号：US11931860

申请日：2007-10-31

Applicant: Timothy Chen ,  Nitin Kumar ,  James K. Skully

Inventor： Timothy Chen ,  Nitin Kumar ,  James K. Skully

IPC: H05B39/04

CPC classification number: H05B41/2825 ,  H05B41/2827

Abstract: A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.

Abstract translation: 基于电流馈电的双极结型晶体管（BJT）的逆变器镇流器包括被配置为驱动相应的BJT开关的基极驱动电路和被配置为与相应的基极驱动电路一起工作的高速驱动反向峰值限流电路。

公开(公告)号：US07759880B2

公开(公告)日：2010-07-20

申请号：US12029811

申请日：2008-02-12

Applicant: Istvan Maros ,  Istvan Peter Bakk ,  Louis R. Nerone ,  Timothy Chen ,  Nitin Kumar

Inventor： Istvan Maros ,  Istvan Peter Bakk ,  Louis R. Nerone ,  Timothy Chen ,  Nitin Kumar

IPC: H05B37/00

CPC classification number: H05B35/00 ,  H01J61/327 ,  H05B41/2827

Abstract: A circuit or combined ballast for driving a fluorescent lamp and at least one light emitting diode (LED) includes an integrated driver circuit having an alternating current (AC) circuit that includes at least one ballast coil for driving the fluorescent lamp and a direct current circuit for driving the LED having a secondary winding inductively coupled with the fluorescent lamp ballast coil for driving the LED. A method of driving a lamp assembly includes at least one fluorescent lamp and at least one light emitting diode (LED) and a combined driver circuit for supplying both the fluorescent lamp and the LED. The combined driver circuit supplies high voltage AC supply to a first portion of the driver circuit to the fluorescent lamp, supplies low voltage DC supply in a second portion of the driver circuit to the LED, and provides a secondary winding in the second portion of the driver circuit that is inductively coupled with a ballast coil in the first portion of the driver circuit that drives the fluorescent lamp.

Abstract translation: 用于驱动荧光灯和至少一个发光二极管（LED）的电路或组合镇流器包括具有交流（AC）电路的集成驱动器电路，其包括用于驱动荧光灯的至少一个镇流器线圈和直流电路 用于驱动具有与用于驱动LED的荧光灯镇流器线圈感应耦合的次级绕组的LED。 驱动灯组件的方法包括至少一个荧光灯和至少一个发光二极管（LED）和用于提供荧光灯和LED两者的组合驱动电路。 组合的驱动器电路向驱动电路的第一部分提供高压AC电源到荧光灯，将驱动电路的第二部分中的低电压DC电源提供给LED，并且在第二部分中提供次级绕组 驱动电路，其与驱动电路的驱动电路的第一部分中的镇流器线圈感应耦合。

公开(公告)号：US20090313610A1

公开(公告)日：2009-12-17

申请号：US12137683

申请日：2008-06-12

Applicant: Basu Vaidyanathan ,  Kavana Nandikur Bhat ,  Nitin Kumar

Inventor： Basu Vaidyanathan ,  Kavana Nandikur Bhat ,  Nitin Kumar

IPC: G06F9/44

CPC classification number: G06F11/362

Abstract: A load store advisory program sets a breakpoint within a portion of a program, determines if the breakpoint will cause unexpected behavior, and generates a warning if it is determined that the breakpoint will cause unexpected behavior. The unexpected behavior may be the result of setting a breakpoint within a load-store sequence that, because of the breakpoint, will repeatedly fail.

Abstract translation: 加载存储咨询程序在程序的一部分内设置断点，确定断点是否会导致意外行为，如果确定断点将导致意外行为，则会生成警告。 意外的行为可能是在加载存储序列中设置断点的结果，因为断点将会重复出现故障。

公开(公告)号：US20080185573A1

公开(公告)日：2008-08-07

申请号：US11702967

申请日：2007-02-05

Applicant: Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-l Lang ,  Tony Chiang

Inventor： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-l Lang ,  Tony Chiang

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US20080185572A1

公开(公告)日：2008-08-07

申请号：US11702725

申请日：2007-02-05

Applicant: Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

Inventor： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.